DARLINGTON NPN SILICON POWER TRANSISTORS

Plastic Medium-Power Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features • High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector-Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387

DARLINGTON SILICON POWER TRANSISTORS

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS

NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Speed Switching Applications

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

POWER TRANSISTORS(65W)

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS

Power Transistors

Power Transistors

Darlington Power Transistor

[multicomp] Darlington silicon power transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO(sus) = 80V (Minimum). • Collector-Emitter Saturation Voltage VCE(sat) = 2.0V (Maximum) at IC =

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications

PLASTIC MEDIUM-POWER SILICON TRANSISTORS

DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS 40-60-80 VOLTS 65 WATTS

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications

Plastic Medium-Power Silicon Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 • Low Collector−Emit

NPN Darlington Power Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:2N6388

SILICON NPN POWER DARLINGTON TRANSISTOR

DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is inteded for use in low and medium frequency power applications. ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN DARLINGTON ■ H

NPN Darlington Power Transistor

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SILICON NPN POWER DARLINGTON TRANSISTOR

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封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 80V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN DARL 80V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

10A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

Trans Darlington NPN 80V 10A 3-Pin(3+Tab) TO-220AB Rail

中等功率双极型晶体管

Silicon NPN Power Transistors

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Plastic Medium-Power Silicon Transistors

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Plastic Medium-Power Silicon Transistors

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Plastic Medium?뭁ower Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 ??80 VOLTS

文件：79.72 Kbytes Page：6 Pages

Plastic Medium-Power Silicon Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 • Low Collector−Emit

SILICON NPN POWER DARLINGTON TRANSISTOR

文件：111.84 Kbytes Page：5 Pages

NPN Darlington Power Transistor

文件：623.48 Kbytes Page：4 Pages

Plastic Medium?뭁ower Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 ??80 VOLTS

文件：79.72 Kbytes Page：6 Pages

Plastic Medium-Power Silicon Transistors

文件：113.64 Kbytes Page：6 Pages

NPN EPITAXIAL PLANAR TRANSISTOR

Description The H2N6388 is designed for general-purpose amplifier and switching applications.