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2N63晶体管资料
2N63别名：2N63三极管、2N63晶体管、2N63晶体三极管
2N63生产厂家：CSR_美国电子晶体管公司
2N63制作材料：Ge-PNP
2N63性质：低频或音频放大 （LF）
2N63封装形式：直插封装
2N63极限工作电压：25V
2N63最大电流允许值：0.02A
2N63最大工作频率：<1MHZ或未知
2N63引脚数：3
2N63最大耗散功率：0.1W
2N63放大倍数：
2N63图片代号：D-161
2N63vtest：25
2N63htest：999900
- 2N63atest：0.02
2N63wtest：0.1
2N63代换 2N63用什么型号代替：AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,3AX51D,
2N63价格
参考价格：￥57.7026
型号：2N6300 品牌：Central Semiconductor 备注：这里有2N63多少钱，2025年最近7天走势，今日出价，今日竞价，2N63批发/采购报价，2N63行情走势销售排行榜，2N63报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 Volts 75 Watts | boca 博卡 |   | ||
Power Transistors Power Transistors TO-66 Case | Central | | ||
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS Power Transistors TO-66 Case | Central | | ||
NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/518 • TO-66 (TO-213AA) Package | MA-COM | | ||
POWER TRANSISTORS(8A, 75W) DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 Volts 75 Watts | MOSPEC 统懋 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON • Low collector saturation voltage • Complement to type 2N6298/6299 APPLICATIONS • General purpose power amplifier and low frequency switching applications | ISC 无锡固电 | | ||
DARLINGTON 8 AMPERE DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON • Low collector saturation voltage • Complement to type 2N6298/6299 APPLICATIONS • General purpose power amplifier and low frequency switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON • Low collector saturation voltage • Complement to type 2N6298/6299 APPLICATIONS • General purpose power amplifier and low frequency switching applications | SAVANTIC | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON • Low collector saturation voltage • Complement to type 2N6298/6299 APPLICATIONS • General purpose power amplifier and low frequency switching applications | ISC 无锡固电 | | ||
NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/518 • TO-66 (TO-213AA) Package | MA-COM | | ||
POWER TRANSISTORS(8A, 75W) DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 Volts 75 Watts | MOSPEC 统懋 | | ||
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS Power Transistors TO-66 Case | Central | | ||
Power Transistors Power Transistors TO-66 Case | Central | | ||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 Volts 75 Watts | boca 博卡 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain @IC=8A APPLICATIONS • Designed for use in high power audio amplifier applications and high voltage switching regulator circuits | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain- : hFE=15-60@IC = 8A ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 10A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain @IC=8A APPLICATIONS • Designed for use in high power audio amplifier applications and high voltage switching regulator circuits | SAVANTIC | | ||
POWER TRANSISTORS PNP SILICON 3 AMPERE POWER TRANSISTORS PNP SILICON 40, 60, 80 VOLTS 6 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SI PNP POWER BJT 3 AMPERE POWER TRANSISTORS PNP SILICON 40, 60, 80 VOLTS 6 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION: These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use | Microsemi 美高森美 | | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for use in High Gain, low noise general purpose UHF amplifiers. Features • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor • Noise Figure = 5.0 dB (typ) @ f = 450 MHz • High FT - 1.4 GHz (min) @ IC = 10 mAdc • Maximum Available Gain = 14 dB (mi | Microsemi 美高森美 | | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: The 2N6304 is a silicon NPN transistor designed primarily for use in high gain, low noise general-purpose UHF amplifiers. Features • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor • Noise Figure = 5.0 dB (typ) @ f = 450 MHz • High FT - 1.4 GHz (min) @ IC = 10 mAd | ADPOW | | ||
BIPOLAR NPN UHF/MICROWAVE TRANSISTOR Description: Bipolar NPN UHF/Microwave Transistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • High power dissipation APPLICATIONS • Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications | SAVANTIC | | ||
NPN POWER TRANSISTORS - 1 KEY FEATURES ■ JAN/JANTX/JANTXV STANDARD PRODUCTS ■ QUALIFIED PER MIL-PRF-19500/498 ■ LOW ON RESISTANCE ■ FAST SWITCHING ■ HIGH OFF ISOLATION ■ HIGH BREAKDOWN VOLTAGE ■ SECOND SOURCE FOR MICROSEMI ■ DESIGNED FOR USE IN HIGH VOLTAGE INVERTERS, CONVERTERS, SWITCHING REGULATORS, LINE OPER | Solitron | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • High power dissipation APPLICATIONS • Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications | ISC 无锡固电 | | ||
NPN POWER SILICON TRANSISTOR NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 | Microsemi 美高森美 | | ||
NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6306, 2N6307, and 2N6308 are NPN Silicon Power Transistor designed for high voltage inverters, switching regulators, line operated amplifiers, and switching power supplies. | Central | | ||
POWER TRANSISTORS TO-3 CASE Power Transistors TO-3 Case (Continued) | Central | | ||
POWER TRANSISTORS TO-3 CASE Power Transistors TO-3 Case (Continued) | Central | | ||
NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6306, 2N6307, and 2N6308 are NPN Silicon Power Transistor designed for high voltage inverters, switching regulators, line operated amplifiers, and switching power supplies. | Central | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • High power dissipation APPLICATIONS • Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications | ISC 无锡固电 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • High power dissipation APPLICATIONS • Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications | SAVANTIC | | ||
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • High power dissipation APPLICATIONS • Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications | SAVANTIC | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
NPN POWER TRANSISTORS - 1 KEY FEATURES ■ JAN/JANTX/JANTXV STANDARD PRODUCTS ■ QUALIFIED PER MIL-PRF-19500/498 ■ LOW ON RESISTANCE ■ FAST SWITCHING ■ HIGH OFF ISOLATION ■ HIGH BREAKDOWN VOLTAGE ■ SECOND SOURCE FOR MICROSEMI ■ DESIGNED FOR USE IN HIGH VOLTAGE INVERTERS, CONVERTERS, SWITCHING REGULATORS, LINE OPER | Solitron | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • High power dissipation APPLICATIONS • Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistors DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Integrated Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers | ISC 无锡固电 | | ||
NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6306, 2N6307, and 2N6308 are NPN Silicon Power Transistor designed for high voltage inverters, switching regulators, line operated amplifiers, and switching power supplies. | Central | | ||
POWER TRANSISTORS TO-3 CASE Power Transistors TO-3 Case (Continued) | Central | | ||
NPN POWER SILICON TRANSISTOR NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 | Microsemi 美高森美 | | ||
Power Transistors Power Transistors TO-66 Case | Central | | ||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. | boca 博卡 | | ||
isc Silicon PNP Power Transistor DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications | SAVANTIC | | ||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications | SAVANTIC | | ||
Bipolar PNP Device in a Hermetically sealed TO66 Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP Device. VCEO = 60V IC = 5A | SEME-LAB | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications | ISC 无锡固电 | |
2N63产品属性
- 类型
描述
- 型号
2N63
- 功能描述
TRANSISTOR | BJT | PNP | 75V V(BR)CEO | 10A I(C) | TO-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT/UNI |
23+ |
3脚铁帽 |
5000 |
原装正品,假一罚十 |
|||
NES |
20+ |
TO66-3P |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
MOTOROLA/摩托罗拉 |
23+ |
TO-3 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MICROSEMI |
24+ |
SMD |
1680 |
MICROSEMI专营品牌进口原装现货假一赔十 |
|||
MOT/UNI |
24+ |
2113 |
|||||
ST |
26+ |
TO-66 |
60000 |
只有原装 可配单 |
|||
NES |
QQ咨询 |
CAN |
107 |
全新原装 研究所指定供货商 |
|||
har |
25+ |
500000 |
行业低价,代理渠道 |
||||
MOT/MSC |
专业铁帽 |
TO66-3P |
650 |
原装铁帽专营,代理渠道量大可订货 |
2N63芯片相关品牌
2N63规格书下载地址
2N63参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
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- 2N6295
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- 2N6292G
- 2N6292
- 2N6291
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- 2N6289
- 2N6288G
- 2N6288
- 2N6287G
- 2N6287
- 2N6286G
- 2N6286
- 2N6285
- 2N6284
- 2N6283
- 2N6282
- 2N6281
2N63数据表相关新闻
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原装代理
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2019-2-18
DdatasheetPDF页码索引
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