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2N63晶体管资料

2N63别名：2N63三极管、2N63晶体管、2N63晶体三极管
2N63生产厂家：CSR_美国电子晶体管公司
2N63制作材料：Ge-PNP
2N63性质：低频或音频放大（LF）
2N63封装形式：直插封装
2N63极限工作电压：25V
2N63最大电流允许值：0.02A
2N63最大工作频率：<1MHZ或未知
2N63引脚数：3
2N63最大耗散功率：0.1W
2N63放大倍数：
2N63图片代号：D-161
2N63vtest：25
2N63htest：999900
2N63atest：0.02
2N63wtest：0.1

2N63代换 2N63用什么型号代替：AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,3AX51D,

2N63价格

参考价格：￥57.7026

型号：2N6300 品牌：Central Semiconductor 备注：这里有2N63多少钱，2026年最近7天走势，今日出价，今日竞价，2N63批发/采购报价，2N63行情走势销售排行榜，2N63报价。

型号	功能描述	生产厂家企业	LOGO
2N6300	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 Volts 75 Watts	BOCA 博卡	BOCA
2N6300	Power Transistors Power Transistors TO-66 Case	CENTRAL	CENTRAL
2N6300	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS Power Transistors TO-66 Case	CENTRAL	CENTRAL
2N6300	NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/518 • TO-66 (TO-213AA) Package	MA-COM	MA-COM
2N6300	POWER TRANSISTORS(8A, 75W) DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 Volts 75 Watts	MOSPEC 统懋	MOSPEC
2N6300	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON • Low collector saturation voltage • Complement to type 2N6298/6299 APPLICATIONS • General purpose power amplifier and low frequency switching applications	ISC 无锡固电	ISC
2N6300	DARLINGTON 8 AMPERE DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6300	COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6300	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON • Low collector saturation voltage • Complement to type 2N6298/6299 APPLICATIONS • General purpose power amplifier and low frequency switching applications	SAVANTIC	SAVANTIC
2N6300	75W NPN Darlington BJT Transistor This BJT is packaged in TO-66 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.	DIGITRON	DIGITRON
2N6301	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON • Low collector saturation voltage • Complement to type 2N6298/6299 APPLICATIONS • General purpose power amplifier and low frequency switching applications	SAVANTIC	SAVANTIC
2N6301	COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75, 100 WATTS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6301	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON • Low collector saturation voltage • Complement to type 2N6298/6299 APPLICATIONS • General purpose power amplifier and low frequency switching applications	ISC 无锡固电	ISC
2N6301	NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/518 • TO-66 (TO-213AA) Package	MA-COM	MA-COM
2N6301	POWER TRANSISTORS(8A, 75W) DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 Volts 75 Watts	MOSPEC 统懋	MOSPEC
2N6301	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS Power Transistors TO-66 Case	CENTRAL	CENTRAL
2N6301	Power Transistors Power Transistors TO-66 Case	CENTRAL	CENTRAL
2N6301	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 Volts 75 Watts	BOCA 博卡	BOCA
2N6302	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain @IC=8A APPLICATIONS • Designed for use in high power audio amplifier applications and high voltage switching regulator circuits	ISC 无锡固电	ISC
2N6302	isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain- : hFE=15-60@IC = 8A ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 10A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications	ISC 无锡固电	ISC
2N6302	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain @IC=8A APPLICATIONS • Designed for use in high power audio amplifier applications and high voltage switching regulator circuits	SAVANTIC	SAVANTIC
2N6303	POWER TRANSISTORS PNP SILICON 3 AMPERE POWER TRANSISTORS PNP SILICON 40, 60, 80 VOLTS 6 WATTS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6303	SI PNP POWER BJT 3 AMPERE POWER TRANSISTORS PNP SILICON 40, 60, 80 VOLTS 6 WATTS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6303	Silicon PNP Power Transistors DESCRIPTION: These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use	MICROSEMI 美高森美	MICROSEMI
2N6304	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for use in High Gain, low noise general purpose UHF amplifiers. Features • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor • Noise Figure = 5.0 dB (typ) @ f = 450 MHz • High FT - 1.4 GHz (min) @ IC = 10 mAdc • Maximum Available Gain = 14 dB (mi	MICROSEMI 美高森美	MICROSEMI
2N6304	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: The 2N6304 is a silicon NPN transistor designed primarily for use in high gain, low noise general-purpose UHF amplifiers. Features • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor • Noise Figure = 5.0 dB (typ) @ f = 450 MHz • High FT - 1.4 GHz (min) @ IC = 10 mAd	ADPOW	ADPOW
2N6304	BIPOLAR NPN UHF/MICROWAVE TRANSISTOR Description: Bipolar NPN UHF/Microwave Transistor	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6306	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6306	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • High power dissipation APPLICATIONS • Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications	SAVANTIC	SAVANTIC
2N6306	NPN POWER TRANSISTORS - 1 KEY FEATURES ■ JAN/JANTX/JANTXV STANDARD PRODUCTS ■ QUALIFIED PER MIL-PRF-19500/498 ■ LOW ON RESISTANCE ■ FAST SWITCHING ■ HIGH OFF ISOLATION ■ HIGH BREAKDOWN VOLTAGE ■ SECOND SOURCE FOR MICROSEMI ■ DESIGNED FOR USE IN HIGH VOLTAGE INVERTERS, CONVERTERS, SWITCHING REGULATORS, LINE OPER	SOLITRON	SOLITRON
2N6306	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N6306	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • High power dissipation APPLICATIONS • Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications	ISC 无锡固电	ISC
2N6306	NPN POWER SILICON TRANSISTOR NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498	MICROSEMI 美高森美	MICROSEMI
2N6306	NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6306, 2N6307, and 2N6308 are NPN Silicon Power Transistor designed for high voltage inverters, switching regulators, line operated amplifiers, and switching power supplies.	CENTRAL	CENTRAL
2N6306	POWER TRANSISTORS TO-3 CASE Power Transistors TO-3 Case (Continued)	CENTRAL	CENTRAL
2N6307	POWER TRANSISTORS TO-3 CASE Power Transistors TO-3 Case (Continued)	CENTRAL	CENTRAL
2N6307	NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6306, 2N6307, and 2N6308 are NPN Silicon Power Transistor designed for high voltage inverters, switching regulators, line operated amplifiers, and switching power supplies.	CENTRAL	CENTRAL
2N6307	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • High power dissipation APPLICATIONS • Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications	ISC 无锡固电	ISC
2N6307	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N6307	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • High power dissipation APPLICATIONS • Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications	SAVANTIC	SAVANTIC
2N6307	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6308	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6308	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • High power dissipation APPLICATIONS • Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications	SAVANTIC	SAVANTIC
2N6308	NPN POWER TRANSISTORS - 1 KEY FEATURES ■ JAN/JANTX/JANTXV STANDARD PRODUCTS ■ QUALIFIED PER MIL-PRF-19500/498 ■ LOW ON RESISTANCE ■ FAST SWITCHING ■ HIGH OFF ISOLATION ■ HIGH BREAKDOWN VOLTAGE ■ SECOND SOURCE FOR MICROSEMI ■ DESIGNED FOR USE IN HIGH VOLTAGE INVERTERS, CONVERTERS, SWITCHING REGULATORS, LINE OPER	SOLITRON	SOLITRON
2N6308	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N6308	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • High power dissipation APPLICATIONS • Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications	ISC 无锡固电	ISC
2N6308	isc Silicon NPN Power Transistors DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Integrated Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers	ISC 无锡固电	ISC
2N6308	NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6306, 2N6307, and 2N6308 are NPN Silicon Power Transistor designed for high voltage inverters, switching regulators, line operated amplifiers, and switching power supplies.	CENTRAL	CENTRAL
2N6308	POWER TRANSISTORS TO-3 CASE Power Transistors TO-3 Case (Continued)	CENTRAL	CENTRAL
2N6308	NPN POWER SILICON TRANSISTOR NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498	MICROSEMI 美高森美	MICROSEMI
2N6312	Power Transistors Power Transistors TO-66 Case	CENTRAL	CENTRAL
2N6312	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.	BOCA 博卡	BOCA
2N6312	isc Silicon PNP Power Transistor DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N6312	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N6312	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6312	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6313	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6313	COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6313	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N6313	Bipolar PNP Device in a Hermetically sealed TO66 Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP Device. VCEO = 60V IC = 5A	SEME-LAB	SEME-LAB

2N63产品属性

类型
描述
Number of Elements per Chip：
1
Minimum Operating Temperature：
-55°C
Minimum DC Current Gain：
500@1A@3V
Maximum Operating Temperature：
200°C
Maximum Emitter Base Voltage：
5V
Maximum Continuous DC Collector Current：
8A
Maximum Collector Emitter Voltage：
60V
Maximum Collector Base Voltage：
60V
Maximum Base Emitter Saturation Voltage：
4@80mA@8AV
Configuration：
Single

2N63供应商更多...

更新时间：2026-5-14 22:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	2N6353	Microchip Technology / Atmel	25+	N/A	6843	样件支持,可原厂排单订货!	询价
深圳市得捷芯城科技有限公司	2N6353	Microchip Technology / Atmel	25+	N/A	6895	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
中天科工半导体（深圳）有限公司	2N6352	NES	20+	TO66-3P	67500	原装优势主营型号-可开原型号增税票	询价
深圳市腾亿芯科技有限公司	2N6353M	ST	25+	TO-66	20000	原装，请咨询	询价
深圳市赛特兴科技有限公司	2N6352	NES	QQ咨询	CAN	107	全新原装研究所指定供货商	询价
深圳市中飞凌科技有限公司	2N6353M	ST	26+	TO-66	60000	只有原装可配单	询价
千层芯半导体(深圳)有限公司	2N6352JANTX	MICROSEMI	24+	SMD	1680	MICROSEMI专营品牌进口原装现货假一赔十	询价
深圳市一线半导体有限公司	2N6352	MOT/UNI	24+		2113		询价
标准国际(香港)有限公司	2N6354	2N6354	25+	8	8		询价
深圳市昊创电子有限公司	2N6352	MOT/MSC	专业铁帽	TO66-3P	650	原装铁帽专营,代理渠道量大可订货	询价

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DdatasheetPDF页码索引

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找IC，尽在114IC

2N63晶体管资料

2N63价格

2N63产品属性

2N63供应商更多...

2N63芯片相关品牌

2N63规格书下载地址

2N63参数引脚图相关

2N63数据表相关新闻

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2N6509G中文资料

DdatasheetPDF页码索引