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2N63晶体管资料
2N63别名:2N63三极管、2N63晶体管、2N63晶体三极管
2N63生产厂家:CSR_美国电子晶体管公司
2N63制作材料:Ge-PNP
2N63性质:低频或音频放大 (LF)
2N63封装形式:直插封装
2N63极限工作电压:25V
2N63最大电流允许值:0.02A
2N63最大工作频率:<1MHZ或未知
2N63引脚数:3
2N63最大耗散功率:0.1W
2N63放大倍数:
2N63图片代号:D-161
2N63vtest:25
2N63htest:999900
- 2N63atest:0.02
2N63wtest:0.1
2N63代换 2N63用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,3AX51D,
2N63价格
参考价格:¥57.7026
型号:2N6300 品牌:Central Semiconductor 备注:这里有2N63多少钱,2025年最近7天走势,今日出价,今日竞价,2N63批发/采购报价,2N63行情走势销售排行榜,2N63报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
POWERTRANSISTORS(8A,75W) DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-80Volts75Watts | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | |||
DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-80Volts75Watts | bocaBoca Semiconductor Corporation 博卡博卡半导体公司 | |||
PowerTransistors PowerTransistorsTO-66Case | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-66package •DARLINGTON •Lowcollectorsaturationvoltage •Complementtotype2N6298/6299 APPLICATIONS •Generalpurposepoweramplifierandlowfrequencyswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-66package •DARLINGTON •Lowcollectorsaturationvoltage •Complementtotype2N6298/6299 APPLICATIONS •Generalpurposepoweramplifierandlowfrequencyswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
DARLINGTON8AMPERE DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS 60-80VOLTS75,100WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
COMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS PowerTransistorsTO-66Case | CentralCentral Semiconductor Corp 美国中央半导体 | |||
COMPLEMENTARYSILICONPOWERTRANSISTORS DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS 60-80VOLTS75,100WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
NPNDarlingtonPowerSiliconTransistor Features •AvailableinJAN,JANTX,JANTXVperMIL-PRF-19500/518 •TO-66(TO-213AA)Package | MA-COM M/A-COM Technology Solutions, Inc. | |||
COMPLEMENTARYSILICONPOWERTRANSISTORS DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS 60-80VOLTS75,100WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
COMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS PowerTransistorsTO-66Case | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPNDarlingtonPowerSiliconTransistor Features •AvailableinJAN,JANTX,JANTXVperMIL-PRF-19500/518 •TO-66(TO-213AA)Package | MA-COM M/A-COM Technology Solutions, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-66package •DARLINGTON •Lowcollectorsaturationvoltage •Complementtotype2N6298/6299 APPLICATIONS •Generalpurposepoweramplifierandlowfrequencyswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-66package •DARLINGTON •Lowcollectorsaturationvoltage •Complementtotype2N6298/6299 APPLICATIONS •Generalpurposepoweramplifierandlowfrequencyswitchingapplications | SAVANTIC Savantic, Inc. | |||
PowerTransistors PowerTransistorsTO-66Case | CentralCentral Semiconductor Corp 美国中央半导体 | |||
POWERTRANSISTORS(8A,75W) DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-80Volts75Watts | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | |||
DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-80Volts75Watts | bocaBoca Semiconductor Corporation 博卡博卡半导体公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •HighDCcurrentgain@IC=8A APPLICATIONS •Designedforuseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •HighDCcurrentgain@IC=8A APPLICATIONS •Designedforuseinhighpoweraudioamplifierapplicationsandhighvoltageswitchingregulatorcircuits | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·ExcellentSafeOperatingArea ·HighDCCurrentGain- :hFE=15-60@IC=8A ·LowSaturationVoltage- :VCE(sat)=1.0V(Max)@IC=10A APPLICATIONS ·DesignedforDC-DCconverter,emergencylighting inverterandgeneralpurposeapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
POWERTRANSISTORSPNPSILICON 3AMPEREPOWERTRANSISTORSPNPSILICON40,60,80VOLTS6WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SIPNPPOWERBJT 3AMPEREPOWERTRANSISTORSPNPSILICON40,60,80VOLTS6WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION: ThesepowertransistorsareproducedbyPPCsDOUBLEDIFFUSEDPLANARprocess.Thistechnologyproduceshighvoltagedeviceswithexcellentswitchingspeeds,frequencyresponse,gainlinearity,saturationvoltages,highcurrentgain,andsafeoperatingareas.Theyareintendedforuse | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION: DesignedprimarilyforuseinHighGain,lownoisegeneralpurposeUHFamplifiers. Features •SiliconRFNPN,TO-72,UHFgeneralpurposeLowNoiseTransistor •NoiseFigure=5.0dB(typ)@f=450MHz •HighFT-1.4GHz(min)@IC=10mAdc •MaximumAvailableGain=14dB(mi | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION: The2N6304isasiliconNPNtransistordesignedprimarilyforuseinhighgain,lownoisegeneral-purposeUHFamplifiers. Features •SiliconRFNPN,TO-72,UHFgeneralpurposeLowNoiseTransistor •NoiseFigure=5.0dB(typ)@f=450MHz •HighFT-1.4GHz(min)@IC=10mAd | ADPOW Advanced Power Technology | |||
BIPOLARNPNUHF/MICROWAVETRANSISTOR Description:BipolarNPNUHF/MicrowaveTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highbreakdownvoltage •Highpowerdissipation APPLICATIONS •Designedforhighvoltageinverters, switchingregulators,lineoperatedamplifiers, andswitchingpowersuppliesapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highbreakdownvoltage •Highpowerdissipation APPLICATIONS •Designedforhighvoltageinverters, switchingregulators,lineoperatedamplifiers, andswitchingpowersuppliesapplications | SAVANTIC Savantic, Inc. | |||
PowerTransistors PowerTransistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
POWERTRANSISTORSTO-3CASE PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPNPOWERSILICONTRANSISTOR NPNPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/498 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
NPNSILICONTRANSISTOR DESCRIPTION TheCENTRALSEMICONDUCTOR2N6306,2N6307,and2N6308areNPNSiliconPowerTransistordesignedforhighvoltageinverters,switchingregulators,lineoperatedamplifiers,andswitchingpowersupplies. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
HIGHVOLTAGENPNSILICONPOWERTRANSISTORS
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
NPNPOWERTRANSISTORS-1 KEYFEATURES ■JAN/JANTX/JANTXVSTANDARDPRODUCTS ■QUALIFIEDPERMIL-PRF-19500/498 ■LOWONRESISTANCE ■FASTSWITCHING ■HIGHOFFISOLATION ■HIGHBREAKDOWNVOLTAGE ■SECONDSOURCEFORMICROSEMI ■DESIGNEDFORUSEINHIGHVOLTAGEINVERTERS, CONVERTERS,SWITCHINGREGULATORS,LINEOPER | Solitron Solitron Devices Inc. | |||
HIGHVOLTAGENPNSILICONPOWERTRANSISTORS
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
NPNSILICONTRANSISTOR DESCRIPTION TheCENTRALSEMICONDUCTOR2N6306,2N6307,and2N6308areNPNSiliconPowerTransistordesignedforhighvoltageinverters,switchingregulators,lineoperatedamplifiers,andswitchingpowersupplies. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
PowerTransistors PowerTransistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
POWERTRANSISTORSTO-3CASE PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highbreakdownvoltage •Highpowerdissipation APPLICATIONS •Designedforhighvoltageinverters, switchingregulators,lineoperatedamplifiers, andswitchingpowersuppliesapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highbreakdownvoltage •Highpowerdissipation APPLICATIONS •Designedforhighvoltageinverters, switchingregulators,lineoperatedamplifiers, andswitchingpowersuppliesapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNPOWERSILICONTRANSISTOR NPNPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/498 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highbreakdownvoltage •Highpowerdissipation APPLICATIONS •Designedforhighvoltageinverters,switchingregulators,lineoperatedamplifiers,andswitchingpowersuppliesapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highbreakdownvoltage •Highpowerdissipation APPLICATIONS •Designedforhighvoltageinverters,switchingregulators,lineoperatedamplifiers,andswitchingpowersuppliesapplications | SAVANTIC Savantic, Inc. | |||
POWERTRANSISTORSTO-3CASE PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 | |||
PowerTransistors PowerTransistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
NPNSILICONTRANSISTOR DESCRIPTION TheCENTRALSEMICONDUCTOR2N6306,2N6307,and2N6308areNPNSiliconPowerTransistordesignedforhighvoltageinverters,switchingregulators,lineoperatedamplifiers,andswitchingpowersupplies. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPNPOWERTRANSISTORS-1 KEYFEATURES ■JAN/JANTX/JANTXVSTANDARDPRODUCTS ■QUALIFIEDPERMIL-PRF-19500/498 ■LOWONRESISTANCE ■FASTSWITCHING ■HIGHOFFISOLATION ■HIGHBREAKDOWNVOLTAGE ■SECONDSOURCEFORMICROSEMI ■DESIGNEDFORUSEINHIGHVOLTAGEINVERTERS, CONVERTERS,SWITCHINGREGULATORS,LINEOPER | Solitron Solitron Devices Inc. | |||
iscSiliconNPNPowerTransistors DESCRIPTION ·HighSwitchingSpeed ·HighVoltage ·Built-inIntegratedDiode APPLICATIONS ·Designedforuseinhorizontaldeflectioncircuitsof colourTVreceivers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HIGHVOLTAGENPNSILICONPOWERTRANSISTORS
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex= | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
iscSiliconPNPPowerTransistor DESCRIPTION •WithTO-66package •Lowcollectorsaturationvoltage •Lowleakagecurrent APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex= | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex=0. | bocaBoca Semiconductor Corporation 博卡博卡半导体公司 | |||
PowerTransistors PowerTransistorsTO-66Case | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-66package •Lowcollectorsaturationvoltage •Lowleakagecurrent APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-66package •Lowcollectorsaturationvoltage •Lowleakagecurrent APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-66package •Lowcollectorsaturationvoltage •Lowleakagecurrent APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
BipolarPNPDeviceinaHermeticallysealedTO66 BipolarPNPDeviceinaHermeticallysealedTO66MetalPackage. BipolarPNPDevice. VCEO=60V IC=5A | SEME-LAB Seme LAB | |||
PowerTransistors PowerTransistorsTO-66Case | CentralCentral Semiconductor Corp 美国中央半导体 | |||
POWERTRANSISTORS(5A,75W) COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex=0. | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 |
2N63产品属性
- 类型
描述
- 型号
2N63
- 功能描述
TRANSISTOR | BJT | PNP | 75V V(BR)CEO | 10A I(C) | TO-3
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
QQ咨询 |
CAN |
105 |
全新原装 研究所指定供货商 |
|||
24+ |
TO-66 |
10000 |
全新 |
||||
MOT |
23+ |
TO-66 |
5000 |
原装正品,假一罚十 |
|||
SML |
24+ |
TO-66 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ADI |
23+ |
N/A |
7000 |
||||
ADI |
23+ |
N/A |
8000 |
只做原装现货 |
|||
MOT |
24+ |
CAN |
18700 |
||||
SML |
21+ |
TO-66 |
137 |
原装现货假一赔十 |
|||
MOT |
23+ |
CAN |
5628 |
原厂原装 |
|||
MOT |
24+ |
CAN |
2257 |
进口原装正品优势供应 |
2N63规格书下载地址
2N63参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
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- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2N6328
- 2N6327
- 2N6326
- 2N6324
- 2N6322
- 2N6318
- 2N6317
- 2N6316
- 2N6315
- 2N6314
- 2N6313
- 2N6312
- 2N6311
- 2N6310
- 2N631
- 2N6309
- 2N6308
- 2N6307
- 2N6306
- 2N6305
- 2N6304
- 2N6303
- 2N6302
- 2N6301
- 2N6300
- 2N630
- 2N62K3
- 2N6299
- 2N6298
- 2N6297
- 2N6296
- 2N6295
- 2N6294
- 2N6293
- 2N6292G
- 2N6292
- 2N6291
- 2N6290
- 2N629
- 2N6289
- 2N6288G
- 2N6288
- 2N6287G
- 2N6287
- 2N6286G
- 2N6286
- 2N6285
- 2N6284
- 2N6283
- 2N6282
- 2N6281
2N63数据表相关新闻
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原装代理
2022-7-232N6509G中文资料
2N6509G中文资料
2019-2-18
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