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2N6313晶体管资料
2N6313别名：2N6313三极管、2N6313晶体管、2N6313晶体三极管
2N6313生产厂家：美国摩托罗拉半导体公司_KER_SSI
2N6313制作材料：Si-PNP
2N6313性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N6313封装形式：直插封装
2N6313极限工作电压：60V
2N6313最大电流允许值：5A
2N6313最大工作频率：>4MHZ
2N6313引脚数：2
2N6313最大耗散功率：75W
2N6313放大倍数：
2N6313图片代号：E-8
2N6313vtest：60
2N6313htest：4000100
- 2N6313atest：5
2N6313wtest：75
2N6313代换 2N6313用什么型号代替：BD244A,BD540A,BD598,BD608,BD950,2N5955,2SB550,3CD81C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N6313 | POWER TRANSISTORS(5A,75W) COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. | MOSPEC 统懋 |   | |
2N6313 | Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications | ISC 无锡固电 | | |
2N6313 | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N6313 | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N6313 | Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications | SAVANTIC | | |
2N6313 | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. | boca 博卡 | | |
2N6313 | Power Transistors Power Transistors TO-66 Case | Central | | |
2N6313 | Bipolar PNP Device in a Hermetically sealed TO66 Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP Device. VCEO = 60V IC = 5A | SEME-LAB | | |
2N6313 | Bipolar Junction Transistors | TTELEC | | |
2N6313 | COMPLEMENTARY SILICON POWER TRANSISTORS 文件：344.67 Kbytes Page：2 Pages | Central | | |
2N6313 | Silicon PNP Power Transistors 文件：117.76 Kbytes Page：3 Pages | SAVANTIC | |
2N6313产品属性
- 类型
描述
- 型号
2N6313
- 制造商
ISC
- 制造商全称
Inchange Semiconductor Company Limited
- 功能描述
Silicon PNP Power Transistors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
QFP |
6850 |
莱克讯每片来自原厂原盒原包装假一罚十价优 |
||||
SML |
22+ |
TO-66 |
20000 |
公司只有原装 品质保证 |
|||
ASI |
24+ |
TO-02 |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
|||
MOT |
24+ |
CAN |
18700 |
||||
SML |
24+ |
TO-66 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
MOT |
23+ |
CAN |
5628 |
原厂原装 |
|||
MOTOROLA/摩托罗拉 |
QQ咨询 |
CAN |
105 |
全新原装 研究所指定供货商 |
|||
SSI |
12+ |
TO-66 |
66 |
原装正品现货,可开发票,假一赔十 |
|||
24+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MOTOROLA/摩托罗拉 |
20+ |
TO-66 |
67500 |
原装优势主营型号-可开原型号增税票 |
2N6313规格书下载地址
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2019-2-18
DdatasheetPDF页码索引
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