2N6312晶体管资料

  • 2N6312别名:2N6312三极管、2N6312晶体管、2N6312晶体三极管

  • 2N6312生产厂家:美国摩托罗拉半导体公司_KER_SSI

  • 2N6312制作材料:Si-PNP

  • 2N6312性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N6312封装形式:直插封装

  • 2N6312极限工作电压:40V

  • 2N6312最大电流允许值:5A

  • 2N6312最大工作频率:>4MHZ

  • 2N6312引脚数:2

  • 2N6312最大耗散功率:75W

  • 2N6312放大倍数

  • 2N6312图片代号:E-8

  • 2N6312vtest:40

  • 2N6312htest:4000100

  • 2N6312atest:5

  • 2N6312wtest:75

  • 2N6312代换 2N6312用什么型号代替:BD244,BD540,BD596,BD606,BD948,2N5954,2SB550,3CD81B,

型号 功能描述 生产厂家 企业 LOGO 操作
2N6312

isc Silicon PNP Power Transistor

DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications

ISC

无锡固电

2N6312

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N6312

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N6312

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Low collector saturation voltage • Low leakage current APPLICATIONS • Designed for general-purpose power amplifier and switching applications

SAVANTIC

2N6312

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.

boca

博卡

2N6312

Power Transistors

Power Transistors TO-66 Case

Central

2N6312

COMPLEMENTARY SILICON POWER TRANSISTORS

文件:344.67 Kbytes Page:2 Pages

Central

2N6312

Silicon PNP Power Transistors

文件:117.76 Kbytes Page:3 Pages

SAVANTIC

2N6312

Bipolar PNP Device in a Hermetically sealed TO66

文件:15.98 Kbytes Page:1 Pages

SEME-LAB

2N6312

Bipolar Junction Transistors

TTELEC

2N6312产品属性

  • 类型

    描述

  • 型号

    2N6312

  • 制造商

    CENTRAL

  • 制造商全称

    Central Semiconductor Corp

  • 功能描述

    Power Transistors

更新时间:2025-10-23 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SML
24+
TO-66
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SML
0744+0439+
TO-66
127
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MOT
24+
CAN
18700
MOT/MSC
20+
TO-66
67500
原装优势主营型号-可开原型号增税票
MOT
23+
CAN
5628
原厂原装
MOTOROLA/摩托罗拉
QQ咨询
CAN
105
全新原装 研究所指定供货商
ASI
24+
TO-02
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
24+
TO-66
10000
全新
MOT/MSC
专业铁帽
TO-66
1000
原装铁帽专营,代理渠道量大可订货
Microchip Technology
25+
TO-213AA TO-66-2
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证

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