NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6306, 2N6307, and 2N6308 are NPN Silicon Power Transistor designed for high voltage inverters, switching regulators, line operated amplifiers, and switching power supplies.

POWER TRANSISTORS TO-3 CASE

Power Transistors TO-3 Case (Continued)

Power Transistors

Power Transistors

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High power dissipation APPLICATIONS • Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High power dissipation APPLICATIONS • Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications

HIGH VOLTAGE NPN SILICON POWER TRANSISTORS

NPN POWER TRANSISTORS - 1

KEY FEATURES ■ JAN/JANTX/JANTXV STANDARD PRODUCTS ■ QUALIFIED PER MIL-PRF-19500/498 ■ LOW ON RESISTANCE ■ FAST SWITCHING ■ HIGH OFF ISOLATION ■ HIGH BREAKDOWN VOLTAGE ■ SECOND SOURCE FOR MICROSEMI ■ DESIGNED FOR USE IN HIGH VOLTAGE INVERTERS, CONVERTERS, SWITCHING REGULATORS, LINE OPER

NPN Silicon Power 250V to 350V, 8A

This specification covers the performance requirements for NPN silicon, power 2N6306 and 2N6308 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/498. The device packages for the encapsulated device types are as fol

包装：散装 描述：NPN TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar NPN Device in a Hermetically sealed TO3

文件：16.309 Kbytes Page：1 Pages

封装/外壳：TO-204AA，TO-3 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个