2A, 600V N-CHANNEL POWER MOSFET

The UTC 2N60ZL is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PW • RDS(ON) = 5Ω@VGS = 10V \n• Low reverse transfer capacitance (CRSS = typical 5.0 pF) \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness;

2A, 600V N-CHANNEL POWER MOSFET

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2A, 600V N-CHANNEL POWER MOSFET

文件：219.93 Kbytes Page：6 Pages

2A, 600V N-CHANNEL POWER MOSFET

文件：219.93 Kbytes Page：6 Pages

2A, 600V N-CHANNEL POWER MOSFET

文件：219.93 Kbytes Page：6 Pages

2A, 600V N-CHANNEL POWER MOSFET

文件：219.93 Kbytes Page：6 Pages

N-Channel 650 V (D-S) MOSFET

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N-Channel 650 V (D-S) MOSFET

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2A, 600V N-CHANNEL POWER MOSFET

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2A, 600V N-CHANNEL POWER MOSFET

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丝印代码：IPAK；N-Channel 650 V (D-S) Power MOSFET

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N-Channel 650 V (D-S) MOSFET

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2A, 600V N-CHANNEL POWER MOSFET

文件：239.6 Kbytes Page：6 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.08609 Mbytes Page：9 Pages

2A, 600V N-CHANNEL POWER MOSFET

文件：239.6 Kbytes Page：6 Pages

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied

TMOS POWER FET 2.0 AMPERES 600 VOLTS

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