2N568晶体管资料
2N568别名:2N568三极管、2N568晶体管、2N568晶体三极管
2N568生产厂家:CSR_美国电子晶体管公司
2N568制作材料:Ge-PNP
2N568性质:低频或音频放大 (LF)_开关管 (S)
2N568封装形式:直插封装
2N568极限工作电压:30V
2N568最大电流允许值:0.3A
2N568最大工作频率:<1MHZ或未知
2N568引脚数:3
2N568最大耗散功率:0.12W
2N568放大倍数:β=100
2N568图片代号:D-9
2N568vtest:30
2N568htest:999900
- 2N568atest:0.3
2N568wtest:0.12
2N568代换 2N568用什么型号代替:AC128,AC152,AC153,AC188,
2N568价格
参考价格:¥15.7172
型号:2N5680 品牌:Microsemi 备注:这里有2N568多少钱,2026年最近7天走势,今日出价,今日竞价,2N568批发/采购报价,2N568行情走势销售排行榜,2N568报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PNP POWER TRANSISTOR SILICON AMPLIFIER PNP POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/582 | MICROSEMI 美高森美 | |||
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors | BOCA 博卡 | |||
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors | CDIL | |||
PNP Power Silicon Transistor Features ● JAN, JANTX, JANTXV, JANS, and JANSR 100K rads (si) per MIL-PRF-19500/560 ● TO-39 (TO-205AD) Package | MA-COM | |||
Small Signal Transistors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications. | CENTRAL | |||
High Voltage Silicon Transistors PNP/NPN GENERAL DESCRIPTION The 2N5679, 2N5680, 2N5681 2N5682 series devices are complementary silicon power transistors, manufactured by the epitaxial planar process, designed for general-purpose amplifier and switching applications where high voltages are required. TO-39, Metal Can Package. FEATURE: | MULTICOMP 易络盟 | |||
PNP SWITCHING TRANSISTORS PNP SWITCHING TRANSISTORS The 2N5679 and 2N5680 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case. They are intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit. The complementary NPN types are the 2N5681 and 2N5682 . | COMSET | |||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
GENERAL PURPOSE TRANSISTOR GENERAL PURPOSE TRANSISTOR 2N5679 2N5680 PNP SILICON 2N5681 2N5682 NPN SILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors | TEL | |||
PNP Silicon Amplifier -100V to -120V, -1A This specification covers the performance requirements for PNP, silicon, amplifier, 2N5679 and 2N5680 transistors, complimentary to the 2N5681 and 2N5682 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/582 and two | MICROCHIP 微芯科技 | |||
PNP Silicon Amplifier -100V to -120V, -1A, Suffix L for Long Leads This specification covers the performance requirements for PNP, silicon, amplifier, 2N5679 and 2N5680 transistors, complimentary to the 2N5681 and 2N5682 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/582 and two | MICROCHIP 微芯科技 | |||
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors | CDIL | |||
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors | CDIL | |||
Small Signal Transistors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications. | CENTRAL | |||
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors | BOCA 博卡 | |||
NPN Silicon Amplifier 100V to 120V, 1A This specification covers the performance requirements for NPN, silicon, amplifier, 2N5681 and 2N5682 transistors Complimentary to the 2N5679 and 2N5680 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device as specified in MIL-PRF-19500/583 and two level | MICROCHIP 微芯科技 | |||
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors | TEL | |||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
GENERAL PURPOSE TRANSISTOR GENERAL PURPOSE TRANSISTOR 2N5679 2N5680 PNP SILICON 2N5681 2N5682 NPN SILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
High Voltage Silicon Transistors PNP/NPN GENERAL DESCRIPTION The 2N5679, 2N5680, 2N5681 2N5682 series devices are complementary silicon power transistors, manufactured by the epitaxial planar process, designed for general-purpose amplifier and switching applications where high voltages are required. TO-39, Metal Can Package. FEATURE: | MULTICOMP 易络盟 | |||
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors | CDIL | |||
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors | CDIL | |||
High Voltage Silicon Transistors PNP/NPN GENERAL DESCRIPTION The 2N5679, 2N5680, 2N5681 2N5682 series devices are complementary silicon power transistors, manufactured by the epitaxial planar process, designed for general-purpose amplifier and switching applications where high voltages are required. TO-39, Metal Can Package. FEATURE: | MULTICOMP 易络盟 | |||
Small Signal Transistors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications. | CENTRAL | |||
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors | BOCA 博卡 | |||
GENERAL PURPOSE TRANSISTOR GENERAL PURPOSE TRANSISTOR 2N5679 2N5680 PNP SILICON 2N5681 2N5682 NPN SILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors | TEL | |||
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors | CDIL | |||
POWER TRANSISTORS(50A,300W) HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • Continuous Collector Current – IC = 50 A • Power Dissipation – PD = 300 W @ TC = 25 °C • DC Current Gain – hFE = 15–60 @ IC = 25 A | MOSPEC 统懋 | |||
NPN POWER SILICON TRANSISTOR NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/466 | MICROSEMI 美高森美 | |||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
BJTS, SI PNP POWER HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc Silicon PNP Power Transistor DESCRIPTION • High DC Current Gain-hFE=15~60@IC = -25A • Low Saturation VoltageVCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS • Designed for use in high power amplifer and switching circuits applications. | ISC 无锡固电 | |||
isc Silicon PNP Power Transistors DESCRIPTION ·High DC Current Gain-hFE=15~60@IC = -25A ·Low Saturation Voltage- VCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers | ISC 无锡固电 | |||
HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
NPN POWER SILICON TRANSISTOR NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/466 | MICROSEMI 美高森美 | |||
High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc • | ONSEMI 安森美半导体 | |||
POWER TRANSISTORS(50A,300W) HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • Continuous Collector Current – IC = 50 A • Power Dissipation – PD = 300 W @ TC = 25 °C • DC Current Gain – hFE = 15–60 @ IC = 25 A | MOSPEC 统懋 | |||
High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc • | ONSEMI 安森美半导体 | |||
NPN POWER SILICON TRANSISTOR NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/464 | MICROSEMI 美高森美 | |||
POWER TRANSISTORS(50A,300W) HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • Continuous Collector Current – IC = 50 A • Power Dissipation – PD = 300 W @ TC = 25 °C • DC Current Gain – hFE = 15–60 @ IC = 25 A | MOSPEC 统懋 | |||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
SI NPN POWER BJT HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Bipolar Transistor Description: High Current TO-3 NPN Silicon Power Transistor. Designed for use in high power amplifier and switching circuit applications. Features: • High Current Capability Ic Continuous = 50A • DC Current Gain hfe 15-60 Ic = 20A • Low Collector Emitter Saturation Voltage Vce(sat)1V Ic = 2 | MULTICOMP 易络盟 | |||
POWER TRANSISTORS(50A,300W) HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • Continuous Collector Current – IC = 50 A • Power Dissipation – PD = 300 W @ TC = 25 °C • DC Current Gain – hFE = 15–60 @ IC = 25 A | MOSPEC 统懋 | |||
High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc • | ONSEMI 安森美半导体 | |||
NPN POWER SILICON TRANSISTOR NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/464 | MICROSEMI 美高森美 | |||
High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc • | ONSEMI 安森美半导体 | |||
High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc • | ONSEMI 安森美半导体 | |||
PNP SILICON TRANSISTORS 文件:20.28 Kbytes Page:2 Pages | SEME-LAB | |||
PNP SILICON TRANSISTORS 文件:19.8 Kbytes Page:2 Pages | SEME-LAB | |||
封装/外壳:TO-205AD,TO-39-3 金属罐 包装:管件 描述:TRANS PNP 120V 1A TO39 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
包装:散装 描述:PNP TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MICROCHIP 微芯科技 |
2N568产品属性
- 类型
描述
- Maximum Power Dissipation:
1000mW
- Maximum Operating Temperature:
200°C
- Maximum Emitter Base Voltage:
4V
- Maximum DC Collector Current:
1A
- Maximum Collector Emitter Voltage:
120V
- Maximum Collector Emitter Saturation Voltage:
0.6@25mA@250mA
- Maximum Collector Base Voltage:
120V
- Material:
Si
- Configuration:
Single
- Category:
Bipolar Power
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-204 |
977 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
onsemi |
25+ |
N/A |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON |
22+ |
TO-3 |
20000 |
公司只有原装 品质保证 |
|||
ON丨安森美 |
20+ |
TO-3 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
ONSemiconductor |
24+ |
NA |
3021 |
进口原装正品优势供应 |
|||
ON |
2025+ |
TO-204 |
3000 |
原装正品现货供应商原厂渠道物美价优 |
|||
ON |
0814+ |
TO-3 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ONSEMI |
25+ |
TO-204 |
20000 |
原装 |
|||
ONSEMI |
21+ |
TO-204 |
3968 |
百域芯优势 实单必成 可开13点增值税 |
|||
ON |
25+23+ |
TO-204 |
18108 |
绝对原装正品全新进口深圳现货 |
2N568规格书下载地址
2N568参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2N5738
- 2N5737
- 2N5734
- 2N5732
- 2N5730
- 2N5729
- 2N5723
- 2N5722
- 2N5721
- 2N5720
- 2N5719
- 2N5698
- 2N5697
- 2N5696
- 2N5695
- 2N5694
- 2N5693
- 2N5692
- 2N5691
- 2N5690
- 2N569
- 2N5689
- 2N5688
- 2N5687
- 2N5686G
- 2N5686
- 2N5685
- 2N5684G
- 2N5684
- 2N5683
- 2N5682
- 2N5681
- 2N5680
- 2N5679
- 2N5678
- 2N5677
- 2N5676
- 2N5675
- 2N5672
- 2N5671
- 2N5670
- 2N567
- 2N5669
- 2N5668
- 2N5667S
- 2N5667
- 2N5666S
- 2N5666
- 2N5665
- 2N5664
- 2N5663
- 2N5662
- 2N5661
- 2N5660
- 2N566
- 2N5659
- 2N5658
- 2N5657G
- 2N5657
2N568数据表相关新闻
2N6027RLRAG坚持只做原装货
2N6027RLRAG坚持只做原装货
2024-9-192N5192G原包原标原装现货
2N5192G原包原标原装现货
2023-5-112N60G-TO220FT-A-TG_UTC代理商
2N60G-TO220FT-A-TG_UTC代理商
2023-3-72N5401L-SOT89R-B-TG_UTC代理商
2N5401L-SOT89R-B-TG_UTC代理商
2023-2-102N6043G
原装代理
2022-7-232N5245
2N5245,当天发货0755-82732291全新原装现货或门市自取.
2020-8-5
DdatasheetPDF页码索引
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