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2N568晶体管资料

  • 2N568别名:2N568三极管、2N568晶体管、2N568晶体三极管

  • 2N568生产厂家:CSR_美国电子晶体管公司

  • 2N568制作材料:Ge-PNP

  • 2N568性质:低频或音频放大 (LF)_开关管 (S)

  • 2N568封装形式:直插封装

  • 2N568极限工作电压:30V

  • 2N568最大电流允许值:0.3A

  • 2N568最大工作频率:<1MHZ或未知

  • 2N568引脚数:3

  • 2N568最大耗散功率:0.12W

  • 2N568放大倍数:β=100

  • 2N568图片代号:D-9

  • 2N568vtest:30

  • 2N568htest:999900

  • 2N568atest:0.3

  • 2N568wtest:0.12

  • 2N568代换 2N568用什么型号代替:AC128,AC152,AC153,AC188,

2N568价格

参考价格:¥15.7172

型号:2N5680 品牌:Microsemi 备注:这里有2N568多少钱,2026年最近7天走势,今日出价,今日竞价,2N568批发/采购报价,2N568行情走势销售排行榜,2N568报价。
型号 功能描述 生产厂家 企业 LOGO 操作

PNP POWER TRANSISTOR SILICON AMPLIFIER

PNP POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/582

MICROSEMI

美高森美

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors

BOCA

博卡

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors

CDIL

PNP Power Silicon Transistor

Features ● JAN, JANTX, JANTXV, JANS, and JANSR 100K rads (si) per MIL-PRF-19500/560 ● TO-39 (TO-205AD) Package

MA-COM

Small Signal Transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications.

CENTRAL

High Voltage Silicon Transistors PNP/NPN

GENERAL DESCRIPTION The 2N5679, 2N5680, 2N5681 2N5682 series devices are complementary silicon power transistors, manufactured by the epitaxial planar process, designed for general-purpose amplifier and switching applications where high voltages are required. TO-39, Metal Can Package. FEATURE:

MULTICOMP

易络盟

PNP SWITCHING TRANSISTORS

PNP SWITCHING TRANSISTORS The 2N5679 and 2N5680 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case. They are intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit. The complementary NPN types are the 2N5681 and 2N5682 .

COMSET

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR 2N5679 2N5680 PNP SILICON 2N5681 2N5682 NPN SILICON

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors

TEL

PNP Silicon Amplifier -100V to -120V, -1A

This specification covers the performance requirements for PNP, silicon, amplifier, 2N5679 and 2N5680 transistors, complimentary to the 2N5681 and 2N5682 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/582 and two

MICROCHIP

微芯科技

PNP Silicon Amplifier -100V to -120V, -1A, Suffix L for Long Leads

This specification covers the performance requirements for PNP, silicon, amplifier, 2N5679 and 2N5680 transistors, complimentary to the 2N5681 and 2N5682 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/582 and two

MICROCHIP

微芯科技

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors

CDIL

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors

CDIL

Small Signal Transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications.

CENTRAL

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors

BOCA

博卡

NPN Silicon Amplifier 100V to 120V, 1A

This specification covers the performance requirements for NPN, silicon, amplifier, 2N5681 and 2N5682 transistors Complimentary to the 2N5679 and 2N5680 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device as specified in MIL-PRF-19500/583 and two level

MICROCHIP

微芯科技

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors

TEL

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR 2N5679 2N5680 PNP SILICON 2N5681 2N5682 NPN SILICON

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High Voltage Silicon Transistors PNP/NPN

GENERAL DESCRIPTION The 2N5679, 2N5680, 2N5681 2N5682 series devices are complementary silicon power transistors, manufactured by the epitaxial planar process, designed for general-purpose amplifier and switching applications where high voltages are required. TO-39, Metal Can Package. FEATURE:

MULTICOMP

易络盟

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors

CDIL

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors

CDIL

High Voltage Silicon Transistors PNP/NPN

GENERAL DESCRIPTION The 2N5679, 2N5680, 2N5681 2N5682 series devices are complementary silicon power transistors, manufactured by the epitaxial planar process, designed for general-purpose amplifier and switching applications where high voltages are required. TO-39, Metal Can Package. FEATURE:

MULTICOMP

易络盟

Small Signal Transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications.

CENTRAL

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors

BOCA

博卡

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR 2N5679 2N5680 PNP SILICON 2N5681 2N5682 NPN SILICON

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors

TEL

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS These Are High Voltage & High Current, General Purpose Transistors

CDIL

POWER TRANSISTORS(50A,300W)

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • Continuous Collector Current – IC = 50 A • Power Dissipation – PD = 300 W @ TC = 25 °C • DC Current Gain – hFE = 15–60 @ IC = 25 A

MOSPEC

统懋

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/466

MICROSEMI

美高森美

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

BJTS, SI PNP POWER

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) =

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) =

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Power Transistor

DESCRIPTION • High DC Current Gain-hFE=15~60@IC = -25A • Low Saturation VoltageVCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS • Designed for use in high power amplifer and switching circuits applications.

ISC

无锡固电

isc Silicon PNP Power Transistors

DESCRIPTION ·High DC Current Gain-hFE=15~60@IC = -25A ·Low Saturation Voltage- VCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers

ISC

无锡固电

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) =

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/466

MICROSEMI

美高森美

High-Current Complementary Silicon Power Transistors

These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc •

ONSEMI

安森美半导体

POWER TRANSISTORS(50A,300W)

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • Continuous Collector Current – IC = 50 A • Power Dissipation – PD = 300 W @ TC = 25 °C • DC Current Gain – hFE = 15–60 @ IC = 25 A

MOSPEC

统懋

High-Current Complementary Silicon Power Transistors

These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc •

ONSEMI

安森美半导体

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/464

MICROSEMI

美高森美

POWER TRANSISTORS(50A,300W)

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • Continuous Collector Current – IC = 50 A • Power Dissipation – PD = 300 W @ TC = 25 °C • DC Current Gain – hFE = 15–60 @ IC = 25 A

MOSPEC

统懋

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) =

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) =

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SI NPN POWER BJT

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) =

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Bipolar Transistor

Description: High Current TO-3 NPN Silicon Power Transistor. Designed for use in high power amplifier and switching circuit applications. Features: • High Current Capability Ic Continuous = 50A • DC Current Gain hfe 15-60 Ic = 20A • Low Collector Emitter Saturation Voltage Vce(sat)1V Ic = 2

MULTICOMP

易络盟

POWER TRANSISTORS(50A,300W)

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • Continuous Collector Current – IC = 50 A • Power Dissipation – PD = 300 W @ TC = 25 °C • DC Current Gain – hFE = 15–60 @ IC = 25 A

MOSPEC

统懋

High-Current Complementary Silicon Power Transistors

These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc •

ONSEMI

安森美半导体

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/464

MICROSEMI

美高森美

High-Current Complementary Silicon Power Transistors

These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc •

ONSEMI

安森美半导体

High-Current Complementary Silicon Power Transistors

These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc •

ONSEMI

安森美半导体

PNP SILICON TRANSISTORS

文件:20.28 Kbytes Page:2 Pages

SEME-LAB

PNP SILICON TRANSISTORS

文件:19.8 Kbytes Page:2 Pages

SEME-LAB

封装/外壳:TO-205AD,TO-39-3 金属罐 包装:管件 描述:TRANS PNP 120V 1A TO39 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

包装:散装 描述:PNP TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

2N568产品属性

  • 类型

    描述

  • Maximum Power Dissipation:

    1000mW

  • Maximum Operating Temperature:

    200°C

  • Maximum Emitter Base Voltage:

    4V

  • Maximum DC Collector Current:

    1A

  • Maximum Collector Emitter Voltage:

    120V

  • Maximum Collector Emitter Saturation Voltage:

    0.6@25mA@250mA

  • Maximum Collector Base Voltage:

    120V

  • Material:

    Si

  • Configuration:

    Single

  • Category:

    Bipolar Power

更新时间:2026-5-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-204
977
原厂订货渠道,支持BOM配单一站式服务
onsemi
25+
N/A
7786
正规渠道,免费送样。支持账期,BOM一站式配齐
ON
22+
TO-3
20000
公司只有原装 品质保证
ON丨安森美
20+
TO-3
38900
原装优势主营型号-可开原型号增税票
ONSemiconductor
24+
NA
3021
进口原装正品优势供应
ON
2025+
TO-204
3000
原装正品现货供应商原厂渠道物美价优
ON
0814+
TO-3
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ONSEMI
25+
TO-204
20000
原装
ONSEMI
21+
TO-204
3968
百域芯优势 实单必成 可开13点增值税
ON
25+23+
TO-204
18108
绝对原装正品全新进口深圳现货

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