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2N5686晶体管资料

  • 2N5686别名:2N5686三极管、2N5686晶体管、2N5686晶体三极管

  • 2N5686生产厂家:美国摩托罗拉半导体公司_美国硅晶体技术公司_美国得

  • 2N5686制作材料:Si-NPN

  • 2N5686性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N5686封装形式:直插封装

  • 2N5686极限工作电压:80V

  • 2N5686最大电流允许值:50A

  • 2N5686最大工作频率:>2MHZ

  • 2N5686引脚数:2

  • 2N5686最大耗散功率:300W

  • 2N5686放大倍数

  • 2N5686图片代号:E-44

  • 2N5686vtest:80

  • 2N5686htest:2000100

  • 2N5686atest:50

  • 2N5686wtest:300

  • 2N5686代换 2N5686用什么型号代替:2N5578,2N5579,2N5580,

2N5686价格

参考价格:¥54.7193

型号:2N5686G 品牌:ONSemi 备注:这里有2N5686多少钱,2026年最近7天走势,今日出价,今日竞价,2N5686批发/采购报价,2N5686行情走势销售排行榜,2N5686报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N5686

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/464

MICROSEMI

美高森美

2N5686

High-Current Complementary Silicon Power Transistors

These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc •

ONSEMI

安森美半导体

2N5686

High-Current Complementary Silicon Power Transistors

These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc •

ONSEMI

安森美半导体

2N5686

POWER TRANSISTORS(50A,300W)

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • Continuous Collector Current – IC = 50 A • Power Dissipation – PD = 300 W @ TC = 25 °C • DC Current Gain – hFE = 15–60 @ IC = 25 A

MOSPEC

统懋

2N5686

Bipolar Transistor

Description: High Current TO-3 NPN Silicon Power Transistor. Designed for use in high power amplifier and switching circuit applications. Features: • High Current Capability Ic Continuous = 50A • DC Current Gain hfe 15-60 Ic = 20A • Low Collector Emitter Saturation Voltage Vce(sat)1V Ic = 2

MULTICOMP

易络盟

2N5686

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

2N5686

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) =

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N5686

SI NPN POWER BJT

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) =

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N5686

NPN Silicon Power 60V to 80V, 50A

This specification covers the performance requirements for NPN silicon, power, 2N5685 and 2N5686 transistors, complimentary to 2N5864 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/464. The device package outline

MICROCHIP

微芯科技

2N5686

50 A,80 V,NPN 双极功率晶体管

The Power 50A 80 VBipolar NPN Transistor is designed for use in high power amplifier and switching circuit applications. • High Current Capability - IC Continuous = 50 Amperes.\n• DC Current Gain - hFE = 15-60 @ IC = 25 Adc\n• Low Collector?Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体

2N5686

包装:散装 描述:NPN TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

2N5686

isc Silicon NPN Power Transistor

文件:142.32 Kbytes Page:2 Pages

ISC

无锡固电

2N5686

High?묬urrent Complementary Silicon Power Transistors

文件:151.67 Kbytes Page:7 Pages

ONSEMI

安森美半导体

2N5686

NPN POWER SILICON TRANSISTOR

文件:126.01 Kbytes Page:3 Pages

MICROSEMI

美高森美

High-Current Complementary Silicon Power Transistors

These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc •

ONSEMI

安森美半导体

封装/外壳:TO-204AE 包装:散装 描述:TRANS NPN 80V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/464

MICROSEMI

美高森美

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/464

MICROSEMI

美高森美

2N5686产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Status:

    Active

  • Polarity:

    NPN

  • Type:

    General Purpose

  • VCE(sat) Max (V):

    1

  • IC Cont. (A):

    50

  • VCEO Min (V):

    80

  • VCBO (V):

    80

  • VEBO (V):

    5

  • VBE(sat) (V):

    2

  • VBE(on) (V):

    2

  • hFE Min:

    15

  • hFE Max:

    60

  • fT Min (MHz):

    2

  • PTM Max (W):

    300m

  • Package Type:

    TO-204-2/TO-3-2

更新时间:2026-5-16 9:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA
24+/25+
23
原装正品现货库存价优
26+
N/A
47000
一级代理-主营优势-实惠价格-不悔选择
ON丨安森美
20+
TO-3
38900
原装优势主营型号-可开原型号增税票
ONSEMI/安森美
25+
TO-3
90000
全新原装现货
ON
25+
TO-204
20000
原装
ONSEMI
21+
TO-204
3968
百域芯优势 实单必成 可开13点增值税
ONSEMI
25+
TO-204
20000
原装
ONSEMI/安森美
26+
NA
43600
全新原装现货,假一赔十
onsemi(安森美)
24+
TO-204
977
原厂订货渠道,支持BOM配单一站式服务
ON
2023+
TO-3
8800
正品渠道现货 终端可提供BOM表配单。

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