2N5686晶体管资料
2N5686别名:2N5686三极管、2N5686晶体管、2N5686晶体三极管
2N5686生产厂家:美国摩托罗拉半导体公司_美国硅晶体技术公司_美国得
2N5686制作材料:Si-NPN
2N5686性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2N5686封装形式:直插封装
2N5686极限工作电压:80V
2N5686最大电流允许值:50A
2N5686最大工作频率:>2MHZ
2N5686引脚数:2
2N5686最大耗散功率:300W
2N5686放大倍数:
2N5686图片代号:E-44
2N5686vtest:80
2N5686htest:2000100
- 2N5686atest:50
2N5686wtest:300
2N5686代换 2N5686用什么型号代替:2N5578,2N5579,2N5580,
2N5686价格
参考价格:¥54.7193
型号:2N5686G 品牌:ONSemi 备注:这里有2N5686多少钱,2026年最近7天走势,今日出价,今日竞价,2N5686批发/采购报价,2N5686行情走势销售排行榜,2N5686报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N5686 | NPN POWER SILICON TRANSISTOR NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/464 | MICROSEMI 美高森美 | ||
2N5686 | High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc • | ONSEMI 安森美半导体 | ||
2N5686 | High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc • | ONSEMI 安森美半导体 | ||
2N5686 | POWER TRANSISTORS(50A,300W) HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • Continuous Collector Current – IC = 50 A • Power Dissipation – PD = 300 W @ TC = 25 °C • DC Current Gain – hFE = 15–60 @ IC = 25 A | MOSPEC 统懋 | ||
2N5686 | Bipolar Transistor Description: High Current TO-3 NPN Silicon Power Transistor. Designed for use in high power amplifier and switching circuit applications. Features: • High Current Capability Ic Continuous = 50A • DC Current Gain hfe 15-60 Ic = 20A • Low Collector Emitter Saturation Voltage Vce(sat)1V Ic = 2 | MULTICOMP 易络盟 | ||
2N5686 | Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
2N5686 | HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
2N5686 | SI NPN POWER BJT HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
2N5686 | NPN Silicon Power 60V to 80V, 50A This specification covers the performance requirements for NPN silicon, power, 2N5685 and 2N5686 transistors, complimentary to 2N5864 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/464. The device package outline | MICROCHIP 微芯科技 | ||
2N5686 | 50 A,80 V,NPN 双极功率晶体管 The Power 50A 80 VBipolar NPN Transistor is designed for use in high power amplifier and switching circuit applications. • High Current Capability - IC Continuous = 50 Amperes.\n• DC Current Gain - hFE = 15-60 @ IC = 25 Adc\n• Low Collector?Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc\n• Pb-Free Packages are Available; | ONSEMI 安森美半导体 | ||
2N5686 | 包装:散装 描述:NPN TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MICROCHIP 微芯科技 | ||
2N5686 | isc Silicon NPN Power Transistor 文件:142.32 Kbytes Page:2 Pages | ISC 无锡固电 | ||
2N5686 | High?묬urrent Complementary Silicon Power Transistors 文件:151.67 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | ||
2N5686 | NPN POWER SILICON TRANSISTOR 文件:126.01 Kbytes Page:3 Pages | MICROSEMI 美高森美 | ||
High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc • | ONSEMI 安森美半导体 | |||
封装/外壳:TO-204AE 包装:散装 描述:TRANS NPN 80V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
NPN POWER SILICON TRANSISTOR NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/464 | MICROSEMI 美高森美 | |||
NPN POWER SILICON TRANSISTOR NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/464 | MICROSEMI 美高森美 |
2N5686产品属性
- 类型
描述
- Pb-free:
Pb
- Status:
Active
- Polarity:
NPN
- Type:
General Purpose
- VCE(sat) Max (V):
1
- IC Cont. (A):
50
- VCEO Min (V):
80
- VCBO (V):
80
- VEBO (V):
5
- VBE(sat) (V):
2
- VBE(on) (V):
2
- hFE Min:
15
- hFE Max:
60
- fT Min (MHz):
2
- PTM Max (W):
300m
- Package Type:
TO-204-2/TO-3-2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
24+/25+ |
23 |
原装正品现货库存价优 |
||||
26+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON丨安森美 |
20+ |
TO-3 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
ONSEMI/安森美 |
25+ |
TO-3 |
90000 |
全新原装现货 |
|||
ON |
25+ |
TO-204 |
20000 |
原装 |
|||
ONSEMI |
21+ |
TO-204 |
3968 |
百域芯优势 实单必成 可开13点增值税 |
|||
ONSEMI |
25+ |
TO-204 |
20000 |
原装 |
|||
ONSEMI/安森美 |
26+ |
NA |
43600 |
全新原装现货,假一赔十 |
|||
onsemi(安森美) |
24+ |
TO-204 |
977 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON |
2023+ |
TO-3 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
2N5686规格书下载地址
2N5686参数引脚图相关
- 5000
- 4921
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- 2N5690
- 2N569
- 2N5689
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- 2N5686G
- 2N5685
- 2N5684G
- 2N5684
- 2N5683
- 2N5682
- 2N5681
- 2N5680
- 2N568
- 2N5679
- 2N5678
- 2N5677
- 2N5676
- 2N5675
- 2N5672
- 2N5671
- 2N5670
- 2N567
- 2N5669
- 2N5668
- 2N5667S
- 2N5667
- 2N5666S
- 2N5666
- 2N5665
- 2N5664
- 2N5663
2N5686数据表相关新闻
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原装代理
2022-7-232N5245
2N5245,当天发货0755-82732291全新原装现货或门市自取.
2020-8-5
DdatasheetPDF页码索引
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