2N5684晶体管资料

  • 2N5684别名:2N5684三极管、2N5684晶体管、2N5684晶体三极管

  • 2N5684生产厂家:美国摩托罗拉半导体公司_美国硅晶体技术公司_美国得

  • 2N5684制作材料:Si-PNP

  • 2N5684性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N5684封装形式:直插封装

  • 2N5684极限工作电压:80V

  • 2N5684最大电流允许值:50A

  • 2N5684最大工作频率:>2MHZ

  • 2N5684引脚数:2

  • 2N5684最大耗散功率:300W

  • 2N5684放大倍数

  • 2N5684图片代号:E-44

  • 2N5684vtest:80

  • 2N5684htest:2000100

  • 2N5684atest:50

  • 2N5684wtest:300

  • 2N5684代换 2N5684用什么型号代替:2N6377,2N6378,2N6379,

2N5684价格

参考价格:¥32.0894

型号:2N5684G 品牌:ON 备注:这里有2N5684多少钱,2025年最近7天走势,今日出价,今日竞价,2N5684批发/采购报价,2N5684行情走势销售排行榜,2N5684报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N5684

POWER TRANSISTORS(50A,300W)

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • Continuous Collector Current – IC = 50 A • Power Dissipation – PD = 300 W @ TC = 25 °C • DC Current Gain – hFE = 15–60 @ IC = 25 A

MOSPEC

统懋

2N5684

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/466

Microsemi

美高森美

2N5684

High-Current Complementary Silicon Power Transistors

These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc •

ONSEMI

安森美半导体

2N5684

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

2N5684

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) =

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

2N5684

isc Silicon PNP Power Transistor

DESCRIPTION • High DC Current Gain-hFE=15~60@IC = -25A • Low Saturation VoltageVCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS • Designed for use in high power amplifer and switching circuits applications.

ISC

无锡固电

2N5684

isc Silicon PNP Power Transistors

DESCRIPTION ·High DC Current Gain-hFE=15~60@IC = -25A ·Low Saturation Voltage- VCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers

ISC

无锡固电

2N5684

封装/外壳:TO-204AE 包装:散装 描述:TRANS PNP 80V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

2N5684

包装:散装 描述:NPN TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Microchip

微芯科技

2N5684

High?묬urrent Complementary Silicon Power Transistors

文件:151.67 Kbytes Page:7 Pages

ONSEMI

安森美半导体

High-Current Complementary Silicon Power Transistors

These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc •

ONSEMI

安森美半导体

High?묬urrent Complementary Silicon Power Transistors

文件:151.67 Kbytes Page:7 Pages

ONSEMI

安森美半导体

2N5684产品属性

  • 类型

    描述

  • 型号

    2N5684

  • 功能描述

    两极晶体管 - BJT 50A 80V 300W PNP

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-8-14 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-204
977
原厂订货渠道,支持BOM配单一站式服务
ON
1120+
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MOSPEC
22+
TO-3
100000
代理渠道/只做原装/可含税
MOT/ON
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
MOTOROLA/摩托罗拉
24+
TO-3
880000
明嘉莱只做原装正品现货
三年内
1983
只做原装正品
ON/安森美
23+
NA
75
电子元器件供应原装现货. 优质独立分销。原厂核心渠道
ON
22+
TO-220-3
50000
ON二三极管全系列在售
ON
1725+
TO-3
3256
科恒伟业!只做原装正品,假一赔十!
ON/安森美
24+
TO-3
30000
原装正品公司现货,假一赔十!

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