NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/466

High-Current Complementary Silicon Power Transistors

These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc •

POWER TRANSISTORS(50A,300W)

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • Continuous Collector Current – IC = 50 A • Power Dissipation – PD = 300 W @ TC = 25 °C • DC Current Gain – hFE = 15–60 @ IC = 25 A

Power Transistors

Power Transistors

isc Silicon PNP Power Transistor

DESCRIPTION • High DC Current Gain-hFE=15~60@IC = -25A • Low Saturation VoltageVCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS • Designed for use in high power amplifer and switching circuits applications.

isc Silicon PNP Power Transistors

DESCRIPTION ·High DC Current Gain-hFE=15~60@IC = -25A ·Low Saturation Voltage- VCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – IC Continuous = 50 Amperes. • DC Current Gain – hFE = 15–60 @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage – VCE(sat) =

PNP Silicon Power -60V to -80V, 50A

This specification covers the performance requirements for PNP, silicon, power, 2N5683 and 2N5684 transistors, complimentary to 2N5686 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device as specified in MIL-PRF-19500/466. The device package outlines ar

50 A, 80 V PNP Bipolar Power Transistor

The Power 50A 80 VBipolar NPN Transistor is designed for use in high power amplifier and switching circuit applications. • High Current Capability - IC Continuous = 50 Amperes.\n• DC Current Gain - hFE = 15-60 @ IC = 25 Adc\n• Low Collector?Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc\n• Pb-Free Packages are Available;

封装/外壳：TO-204AE 包装：散装 描述：TRANS PNP 80V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

包装：散装 描述：NPN TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High?묬urrent Complementary Silicon Power Transistors

文件：151.67 Kbytes Page：7 Pages

High-Current Complementary Silicon Power Transistors

These packages are designed for use in high-power amplifier and switching circuit applications. Features • High Current Capability - IC Continuous = 50 Amperes • DC Current Gain - hFE = 15-60 @ IC = 25 Adc • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc •

High?묬urrent Complementary Silicon Power Transistors

文件：151.67 Kbytes Page：7 Pages

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/466

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/466