2N555晶体管资料

  • 2N555别名:2N555三极管、2N555晶体管、2N555晶体三极管

  • 2N555生产厂家:CSR_美国电子晶体管公司_美国锗功率器件公司

  • 2N555制作材料:Ge-PNP

  • 2N555性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N555封装形式:直插封装

  • 2N555极限工作电压:30V

  • 2N555最大电流允许值:3A

  • 2N555最大工作频率:<1MHZ或未知

  • 2N555引脚数:2

  • 2N555最大耗散功率:40W

  • 2N555放大倍数

  • 2N555图片代号:E-44

  • 2N555vtest:30

  • 2N555htest:999900

  • 2N555atest:3

  • 2N555wtest:40

  • 2N555代换 2N555用什么型号代替:AD149,AD150,AD166,AUY19,AUY20,2N2137,2N2138,2N2139,2N2140,2N2141,2N2142,2N2143,2N2144,2N2145,2N2146,3AD56A,

2N555价格

参考价格:¥4.1454

型号:2N555 品牌:Semiconductors 备注:这里有2N555多少钱,2024年最近7天走势,今日出价,今日竞价,2N555批发/采购报价,2N555行情走势销售排行榜,2N555报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N555

2N178(GERMANIUM)

文件:147.78 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

TRANSISTOR(NPN)

FEATURES ●Switchingandamplificationinhighvoltage ●Applicationssuchastelephony ●Lowcurrent(max.600mA) ●Highvoltage(max.160V)

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN

TO-92Plastic-EncapsulateTransistors

FEATURES Switchingandmplificationinigholtage Applicationssuchaselephony Lowurrent(ax.600mA) Higholtage(ax.160V)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

NPNhigh-voltagetransistors

FEATURES ·Lowcurrent(max.300mA) ·Highvoltage(max.160V). APPLICATIONS ·Switchingandamplificationinhighvoltageapplications suchastelephony. DESCRIPTION NPNhigh-voltagetransistorinaTO-92;SOT54plastic package.PNPcomplements:2N5400and2N5401.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

SERIES2NTRANSISTORS

SERIES2NTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NPNEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR

HighVoltageNPNTransistorForGeneralPurposeandTelephonyApplications.

CDIL

CDIL

CDIL

NPNSiliconEpitaxialPlanarTransistors

NPNSiliconEpitaxialPlanarTransistorsforgeneralpurpose,highvoltageamplifierapplications. AscomplementarytypesthePNPtransistorsST2N5400andST2N5401arerecommended. Onspecialrequest,thesetransistorscanbemanufacturedindifferentpinconfigurations.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

NPNPlasticEncapsulateTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •CollectorCurrent:ICM=0.6A •Collector-BaseVoltage:V(BR)CBO=160V •OperatingAndStorageTemperatures–55°Cto150°C •Capableof625mWattsofPowerDissipation •LeadFreeFinish/RoHSCompliant(PSuffixdesignates

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNSMALLSIGNALHIGHVOLTAGEGENERALPURPOSEAMPLIFIER

NPNSMALLSIGNALHIGHVOLTAGEGENERALPURPOSEAMPLIFIER

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

mplifierTransistors(NPNSilicon)

AmplifierTransistors NPNSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNhigh-voltagetransistors

DESCRIPTION NPNhigh-voltagetransistorinaTO-92;SOT54plasticpackage.PNPcomplements:2N5400and2N5401. FEATURES •Lowcurrent(max.300mA) •Highvoltage(max.160V). APPLICATIONS •Switchingandamplificationinhighvoltageapplicationssuchastelephony.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPNEPITAXIALSILICONTRANSISTOR

AmplifierTransistor •Collector-EmitterVoltage:VCEO=140V •CollectorDissipation:PC(max)=625mW

SamsungSamsung Group

三星三星半导体

Samsung

NPNSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications????

NPNSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications.

SEMTECH

Semtech Corporation

SEMTECH

NPNEPITAXIALSILICONTRANSISTOR

AmplifierTransistor •Collector-EmitterVoltage:VCEO=140V •CollectorDissipation:PC(max)=625mW

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage :VCBO=160V,VCEO=140V •LowLeakageCurrent. :ICBO=100nA(Max.)VCB=100V •LowSaturationVoltage :VCE(sat)=0.25V(Max.)IC=50mA,IB=5mA •LowNoise:NF=10dB(Max.)

KECKEC CORPORATION

KEC株式会社

KEC

COMPLEMENTARYSILICONGENERALPURPOSEHIGHVOLTAGETRANSISTORS

2N5400,2N5401-->PNP 2N5550,2N5551-->NPN

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS

AmplifierTransistors

AmplifierTransistors NPNSilicon

MotorolaMotorola, Inc

摩托罗拉

Motorola

SmallSignalTransistorsTO-92Case(Continued)

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N4400and2N4401aresiliconNPNtransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.PNPcomplementarytypesare2N4402and2N4403. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

GeneralPurposeSi-EpitaxialPlanarTransistors

•Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

DiotecDIOTEC

德欧泰克

Diotec

AmplifierTransistors

Features •Pb−FreePackagesareAvailable* •DeviceMarking:DeviceType,e.g.,2N5550,DateCode

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

DAYA

NPNPlasticEncapsulatedTransistor

FEATURES •Switchingandamplificationinhighvoltage •Applicationssuchastelephony •Lowcurrent(max.600mA) •Highvoltage(max.160V)

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

TO-92Plastic-EncapsulateTransistors

FEATURES Switchingandmplificationinigholtage Applicationssuchaselephony Lowurrent(ax.600mA) Higholtage(ax.160V)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

HighVoltageTransistors

HighVoltageTransistors FEATURE •Pb-Freepackageisavailable.

FS

First Silicon Co., Ltd

FS

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage :VCBO=160V,VCEO=140V •LowLeakageCurrent. :ICBO=100nA(Max.)VCB=100V •LowSaturationVoltage :VCE(sat)=0.25V(Max.)IC=50mA,IB=5mA •LowNoise:NF=10dB(Max.)

KECKEC CORPORATION

KEC株式会社

KEC

TO-92Plastic-EncapsulateTransistors

FEATURES Switchingandmplificationinigholtage Applicationssuchaselephony Lowurrent(ax.600mA) Higholtage(ax.160V)

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

NPNTransistorBareDie

Generalpurposehighvoltageamplifierorswitchinbaredieform Features HighCollectorBreakdownVoltage LowCollectorSaturationVoltage Characterizedattemperatureextremes HighReliabilityGoldBackMetal HighReliabilitytestedgradesforMilitary+Space

SS

Silicon Supplies

SS

NPNTransistors

Features ●Switchingandamplificationinhighvoltage ●Applicationssuchastelephony ●Lowcurrent(max.600mA) ●Highvoltage(max.180V)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

NPNhigh-voltagetransistors

FEATURES ·Lowcurrent(max.300mA) ·Highvoltage(max.160V). APPLICATIONS ·Switchingandamplificationinhighvoltageapplications suchastelephony. DESCRIPTION NPNhigh-voltagetransistorinaTO-92;SOT54plastic package.PNPcomplements:2N5400and2N5401.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

TO-92Plastic-EncapsulateTransistors

Features GeneralPurposeSwitchingApplication

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

GeneralPurposeSwitchingApplication

NPNSiliconEpitaxialPlanarTransistorsforgeneralpurpose,highvoltageamplifierapplications. AscomplementarytypesthePNPtransistorsST2N5400andST2N5401arerecommended. Onspecialrequest,thesetransistorscanbemanufacturedindifferentpinconfigurations.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●GeneralPurposeSwitchingApplication

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

NPNSMALLSIGNALHIGHVOLTAGEGENERALPURPOSEAMPLIFIER

SERIES2NTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) Features ●GeneralPurposeSwitchingApplication

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI

NPNSiliconTransistor(GeneralpurposeamplifierHighvoltageapplication)

Descriptions •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage:VCBO=180V,VCEO=160V •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(MAX.) •Complementarypairwith2N5401

AUK

AUK

AUK

TO-92Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.6A Collector-basevoltage V(BR)CBO:180V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL

NPNGeneralPurposeAmplifierTransistor

Features •Thisdeviceisdesignedforgeneralpurposehighvoltageamplifiersandgasdischargedisplaydrivers. •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLrating1 •Marking:Typenumber •LeadFreeFinish/RohsCompliant(PSuffixdesignatesCo

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

AmplifierTransistors

Features •Pb−FreePackagesareAvailable* •DeviceMarking:DeviceType,e.g.,2N5550,DateCode

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

DAYA

TO-92Plastic-EncapsulateTransistors

Features •Pb−FreePackagesareAvailable* •DeviceMarking:DeviceType,e.g.,2N5550,DateCode

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

DAYA

NPNSiliconGeneralPurposeTransistor

FEATURES *Switchingandamplificationinhighvoltage *Lowcurrent(max.600mA) *Highvoltage(max.180v)

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

GeneralPurposeSi-EpitaxialPlanarTransistors

•Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

DiotecDIOTEC

德欧泰克

Diotec

mplifierTransistors(NPNSilicon)

AmplifierTransistors NPNSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR

NPNEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR HighVoltageNPNTransistorForGeneralPurposeAndTelephonyApplications.

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

NPNSiliconTransistor

Descriptions •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage: VCBO=180V,VCEO=160V •Lowcollectorsaturationvoltage: VCE(sat)=0.5V(MAX.) •Complementarypairwith2N5401

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI

NPNEPITAXIALPLANARTRANSISTOR

Description The2N5551isdesignedforamplifiertransistor. Features •ComplementstoPNPType2N5401. •HighCollector-EmitterBreakdownVoltage.VCEO>160V(@IC=1mA)

TGS

Tiger Electronic Co.,Ltd

TGS

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

SmallSignalHighVoltageTransistor(NPN)

Features •HighVoltageNPNTransistorforGeneralPurposeand TelephonyApplications

TAITRON

TAITRON

TAITRON

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeamplifierapplications.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM

NPNhigh-voltagetransistor

DESCRIPTION •NPNhigh-voltagetransistor •Lowcurrent(max.300mA) •Highvoltage(max.160V) •Complementsto2N5401. APPLICATIONS •DesignedforSwitchingandamplification inhighvoltageapplications,suchastelephony applications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SERIES2NTRANSISTORS

SERIES2NTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ●GeneralPurposeSwitchingApplication

FS

First Silicon Co., Ltd

FS

SmallSignalTransistorsTO-92Case(Continued)

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N4400and2N4401aresiliconNPNtransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.PNPcomplementarytypesare2N4402and2N4403. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

COMPLEMENTARYSILICONGENERALPURPOSEHIGHVOLTAGETRANSISTORS

2N5400,2N5401-->PNP 2N5550,2N5551-->NPN

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES HighCollectorBreakdwonVoltage :VCBO=180V,VCEO=160V LowLeakageCurrent. :ICBO=50nA(Max.),VCB=120V LowSaturationVoltage :VCE(sat)=0.2V(Max.),IC=50mA,IB=5mA LowNoise:NF=8dB(Max.)

KECKEC CORPORATION

KEC株式会社

KEC

NPNGeneralPurposeAmplifier

Description Thisdeviceisdesignedforgeneral-purposehigh-voltageamplifiersandgasdischargedisplaydrivers.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

NPNSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications????

NPNSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications.

SEMTECH

Semtech Corporation

SEMTECH

AmplifierTransistors

AmplifierTransistors NPNSilicon

MotorolaMotorola, Inc

摩托罗拉

Motorola

NPNTransistors

NPNTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON

NPNGeneralPurposeAmplifier

FEATURES&USE ★HighCollectorBreakdownVoltage;LowNoise; ★Complementaryto2N5401 ★Thisdeviceisdesignedasageneralpurposeamplifierandswitchforapplicationsrequiringhighvoltages.

AVICTEKAvic Technology

Avic Technology

AVICTEK

TO-92Plastic-EncapsulateTransistors

Features GeneralPurposeSwitchingApplication

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

HIGHVOLTAGESWITCHINGTRANSISTOR

FEATURES *Highcollector-emittervoltage: VCEO=160V *Highcurrentgain APPLICATIONS *Telephoneswitchingcircuit *Amplifier

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

2N555产品属性

  • 类型

    描述

  • 型号

    2N555

  • 功能描述

    MIL-SPEC S6J1B

更新时间:2024-4-28 21:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/ON Semiconductor/安森美/安
21+
TO-92
13418
优势代理渠道,原装正品,可全系列订货开增值税票
ON
0249+
TO-92
143
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC(友顺)
24+
TO-92-3
5000
诚信服务,绝对原装原盘。
ON
17+
TO-92
6000
进口原装正品假一赔十,货期7-10天
CJ长电/长晶
ROHS/new original
TO-92
10500
原装元器件供应现货支持。咨询更多现货库存,支持样
CJ(江苏长电/长晶)
2023+
N/A
4550
全新原装正品
ON
22+
TO-92
138
正规渠道,只有原装!
UTC/友顺
22+
TO92
9850
只做原装正品假一赔十!正规渠道订货!
KEC
21+
SOT-23
60000
绝对原装正品现货,假一罚十
onsemi(安森美)
23+
TO-92-3
1612
原厂订货渠道,支持BOM配单一站式服务

2N555芯片相关品牌

  • ANAREN
  • CDE
  • COMCHIP
  • COPAL
  • Cypress
  • freescale
  • ILSI
  • NKK
  • OPTOWAY
  • Philips
  • WALSIN
  • WURTH

2N555数据表相关新闻