2N 178 (GERMANIUM)

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TRANSISTOR (NPN)

FEATURES ● Switching and amplification in high voltage ● Applications such as telephony ● Low current(max. 600mA) ● High voltage(max.160V)

TO-92 Plastic-Encapsulate Transistors

FEATURES Switching and mplification in igh oltage Applications such as elephony Low urrent(ax. 600mA) High oltage(ax.160V)

NPN high-voltage transistors

SERIES 2N TRANSISTORS

SERIES 2N TRANSISTORS

NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR

High Voltage NPN Transistor For General Purpose and Telephony Applications.

NPN Silicon Epitaxial Planar Transistors

NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.

NPN Plastic Encapsulate Transistor

Features • Halogen free available upon request by adding suffix -HF • Collector Current: ICM=0.6A • Collector-Base Voltage: V(BR)CBO=160V • Operating And Storage Temperatures –55°C to 150°C • Capable of 625mWatts of Power Dissipation • Lead Free Finish/RoHS Compliant (P Suffix designates

NPN SMALL SIGNAL HIGH VOLTAGE GENERAL PURPOSE AMPLIFIER

NPN SMALL SIGNAL HIGH VOLTAGE GENERAL PURPOSE AMPLIFIER

mplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • Switching and amplification in high voltage applications such as telephony.

NPN EPITAXIAL SILICON TRANSISTOR

Amplifier Transistor • Collector-Emitter Voltage : VCEO = 140V • Collector Dissipation : PC(max) = 625mW

NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications????

NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications.

NPN EPITAXIAL SILICON TRANSISTOR

Amplifier Transistor • Collector-Emitter Voltage : VCEO = 140V • Collector Dissipation : PC(max) = 625mW

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V • Low Leakage Current. : ICBO=100nA(Max.) VCB=100V • Low Saturation Voltage : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA • Low Noise : NF=10dB (Max.)

COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS

2N5400,2N5401 --> PNP 2N5550,2N5551 --> NPN

Amplifier Transistors

Amplifier Transistors NPN Silicon

Small Signal Transistors TO-92 Case (Continued)

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N4402 and 2N4403. MARKING: FULL PART NUMBER

General Purpose Si-Epitaxial Planar Transistors

• Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

Amplifier Transistors

Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code

NPN Plastic Encapsulated Transistor

FEATURES • Switching and amplification in high voltage • Applications such as telephony • Low current(max.600mA) • High voltage(max.160V)

TO-92 Plastic-Encapsulate Transistors

FEATURES Switching and mplification in igh oltage Applications such as elephony Low urrent(ax. 600mA) High oltage(ax.160V)

High Voltage Transistors

High Voltage Transistors FEATURE • Pb-Free package is available.

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V • Low Leakage Current. : ICBO=100nA(Max.) VCB=100V • Low Saturation Voltage : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA • Low Noise : NF=10dB (Max.)

TO-92 Plastic-Encapsulate Transistors

FEATURES Switching and mplification in igh oltage Applications such as elephony Low urrent(ax. 600mA) High oltage(ax.160V)

NPN Transistor Bare Die

General purpose high voltage amplifier or switch in bare die form Features High Collector Breakdown Voltage Low Collector Saturation Voltage Charac terized at temperature extremes High R eliability Gold Back Metal High Reliability tested grades for Military + Space

NPN Transistors

Features ● Switching and amplification in high voltage ● Applications such as telephony ● Low current(max. 600mA) ● High voltage(max.180V)

NPN high-voltage transistors

TO-92 Plastic-Encapsulate Transistors

Features General Purpose Switching Application

General Purpose Switching Application

NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● General Purpose Switching Application

NPN SMALL SIGNAL HIGH VOLTAGE GENERAL PURPOSE AMPLIFIER

SERIES 2N TRANSISTORS

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● General Purpose Switching Application

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) Features ● General Purpose Switching Application

NPN Silicon Transistor (General purpose amplifier High voltage application)

Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with 2N5401

TO-92 Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO : 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN General Purpose Amplifier Transistor

Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL rating 1 • Marking:Type number • Lead Free Finish/Rohs Compliant (PSuffix designates Co

Amplifier Transistors

Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code

TO-92 Plastic-Encapsulate Transistors

Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code

NPN Silicon General Purpose Transistor

FEATURES * Switching and amplification in high voltage * Low current(max. 600mA) * High voltage(max.180v)

General Purpose Si-Epitaxial Planar Transistors

• Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

mplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

Small Signal High Voltage Transistor (NPN)

Features • High Voltage NPN Transistor for General Purpose and Telephony Applications

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose amplifier applications.

NPN Silicon Transistor

Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with 2N5401

NPN EPITAXIAL PLANAR TRANSISTOR

Description The 2N5551 is designed for amplifier transistor. Features • Complements to PNP Type 2N5401. • High Collector-Emitter Breakdown Voltage. VCEO>160V (@IC=1mA)

NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR

NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR High Voltage NPN Transistor For General Purpose And Telephony Applications.

HIGH VOLTAGE SWITCHING TRANSISTOR

FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier

SERIES 2N TRANSISTORS

SERIES 2N TRANSISTORS

NPN high-voltage transistor

DESCRIPTION • NPN high-voltage transistor • Low current (max. 300 mA) • High voltage (max. 160 V) • Complements to 2N5401. APPLICATIONS • Designed for Switching and amplification in high voltage applications , such as telephony applications.

Small Signal Transistors TO-92 Case (Continued)

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N4402 and 2N4403. MARKING: FULL PART NUMBER

COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS

2N5400,2N5401 --> PNP 2N5550,2N5551 --> NPN

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.)

NPN General Purpose Amplifier

Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers.

NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications????

NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications.

Amplifier Transistors

Amplifier Transistors NPN Silicon

NPN Transistors

NPN Transistors P/b Lead(Pb)-Free

NPN General Purpose Amplifier

FEATURES & USE ★ High Collector Breakdown Voltage; Low Noise; ★ Complementary to 2N5401 ★ This device is designed as a general purpose amplifier and switch for applications requiring high voltages.

TO-92 Plastic-Encapsulate Transistors

Features General Purpose Switching Application

HIGH VOLTAGE SWITCHING TRANSISTOR

FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier