EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V • Low Leakage Current. : ICBO=100nA(Max.) VCB=100V • Low Saturation Voltage : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA • Low Noise : NF=10dB (Max.)

丝印代码：F0；High Voltage Transistors

High Voltage Transistors FEATURE • Pb-Free package is available.

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.\nHIGH VOLTAGE APPLICATION.FEATURES\n• High Collector Breakdwon Voltage\n   : VCBO=160V, VCEO=140V\n• Low Leakage Current.\n   : ICBO=100nA(Max.) VCB=100V\n• Low Saturation Voltage\n   : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA\n• Low Noise : NF=10dB (Max.) • High Collector Breakdwon Voltage\n   : VCBO=160V, VCEO=140V\n• Low Leakage Current.\n   : ICBO=100nA(Max.) VCB=100V\n• Low Saturation Voltage\n   : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA\n• Low Noise : NF=10dB (Max.);

TRANSISTOR:High Volatage

EPITAXIAL PLANAR NPN TRANSISTOR

文件：39.37 Kbytes Page：2 Pages

EPITAXIAL PLANAR NPN TRANSISTOR

文件：39.37 Kbytes Page：2 Pages

NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications????

NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications.

NPN EPITAXIAL SILICON TRANSISTOR

Amplifier Transistor • Collector-Emitter Voltage : VCEO = 140V • Collector Dissipation : PC(max) = 625mW

mplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • Switching and amplification in high voltage applications such as telephony.

NPN EPITAXIAL SILICON TRANSISTOR

Amplifier Transistor • Collector-Emitter Voltage : VCEO = 140V • Collector Dissipation : PC(max) = 625mW