mplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • Switching and amplification in high voltage applications such as telephony.

NPN EPITAXIAL SILICON TRANSISTOR

Amplifier Transistor • Collector-Emitter Voltage : VCEO = 140V • Collector Dissipation : PC(max) = 625mW

NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications????

NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications.

NPN EPITAXIAL SILICON TRANSISTOR

Amplifier Transistor • Collector-Emitter Voltage : VCEO = 140V • Collector Dissipation : PC(max) = 625mW

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V • Low Leakage Current. : ICBO=100nA(Max.) VCB=100V • Low Saturation Voltage : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA • Low Noise : NF=10dB (Max.)

COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS

2N5400,2N5401 --> PNP 2N5550,2N5551 --> NPN

Amplifier Transistors

Amplifier Transistors NPN Silicon

Small Signal Transistors TO-92 Case (Continued)

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N4402 and 2N4403. MARKING: FULL PART NUMBER

General Purpose Si-Epitaxial Planar Transistors

• Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

Amplifier Transistors

Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code

NPN Plastic Encapsulated Transistor

FEATURES • Switching and amplification in high voltage • Applications such as telephony • Low current(max.600mA) • High voltage(max.160V)

NPN SMALL SIGNAL HIGH VOLTAGE GENERAL PURPOSE AMPLIFIER

NPN SMALL SIGNAL HIGH VOLTAGE GENERAL PURPOSE AMPLIFIER

SERIES 2N TRANSISTORS

SERIES 2N TRANSISTORS

NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR

High Voltage NPN Transistor For General Purpose and Telephony Applications.

NPN Silicon Epitaxial Planar Transistors

NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.

NPN Plastic Encapsulate Transistor

Features • Halogen free available upon request by adding suffix -HF • Collector Current: ICM=0.6A • Collector-Base Voltage: V(BR)CBO=160V • Operating And Storage Temperatures –55°C to 150°C • Capable of 625mWatts of Power Dissipation • Lead Free Finish/RoHS Compliant (P Suffix designates

TRANSISTOR (NPN)

FEATURES ● Switching and amplification in high voltage ● Applications such as telephony ● Low current(max. 600mA) ● High voltage(max.160V)

TO-92 Plastic-Encapsulate Transistors

FEATURES Switching and mplification in igh oltage Applications such as elephony Low urrent(ax. 600mA) High oltage(ax.160V)

NPN high-voltage transistors

TO-92 Plastic-Encapsulate Transistors

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Amplifier Transistor

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TO-92 PACKAGE

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Amplifier Transistors

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封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 140V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

小信号晶体管

中等功率双极型晶体管

晶体管

TO-92 Plastic-Encapsulate Transistors

FEATURES Switching and mplification in igh oltage Applications such as elephony Low urrent(ax. 600mA) High oltage(ax.160V)

High Voltage Transistors

High Voltage Transistors FEATURE • Pb-Free package is available.

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V • Low Leakage Current. : ICBO=100nA(Max.) VCB=100V • Low Saturation Voltage : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA • Low Noise : NF=10dB (Max.)

TO-92 Plastic-Encapsulate Transistors

FEATURES Switching and mplification in igh oltage Applications such as elephony Low urrent(ax. 600mA) High oltage(ax.160V)

Amplifier Transistor

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Amplifier Transistors NPN Silicon

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NPN Plastic Encapsulated Transistor

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TO-92 PACKAGE

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封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR） 描述：TRANS NPN 140V 0.6A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Amplifier Transistors NPN Silicon

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Amplifier Transistors

文件：71.63 Kbytes Page：6 Pages

Amplifier Transistors

文件：71.63 Kbytes Page：6 Pages

Amplifier Transistors NPN Silicon

文件：88.88 Kbytes Page：6 Pages

Amplifier Transistors

文件：71.63 Kbytes Page：6 Pages

EPITAXIAL PLANAR NPN TRANSISTOR

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EPITAXIAL PLANAR NPN TRANSISTOR

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