EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V • Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : NF=8dB (Max.)

High Voltage Transistor

FEATURE ● We declare that the material of product compliance with RoHS requirements.

PNP Switching Transistor

Features - Epoxy meets UL-94 V-0 flammability rating. - Moisture sensitivity Level 1.

PNP Switching Transister

TRANSISTOR:High Volatage

General Purpose Transistor, SOT-23, -150V, -0.6A

EPITAXIAL PLANAR PNP TRANSISTOR

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Amplifier Transistor(PNP Silicon)

PNP Silicon

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications???

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications

PNP General Purpose Amplifier

PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.

PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complement: 2N5551. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • General purpose switching and amplification • Telephony applications.

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR ● Collector-Emitter Voltage: VCEO = 150V ● Collector Dissipation: Pc (max) = 625mW

EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR

文件：39.6 Kbytes Page：2 Pages

PNP Transistor

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