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2N519晶体管资料

  • 2N519别名:2N519三极管、2N519晶体管、2N519晶体三极管

  • 2N519生产厂家:CSR_美国电子晶体管公司_IDI

  • 2N519制作材料:Ge-PNP

  • 2N519性质:低频或音频放大 (LF)_开关管 (S)

  • 2N519封装形式:直插封装

  • 2N519极限工作电压:15V

  • 2N519最大电流允许值

  • 2N519最大工作频率:>0.5MHZ

  • 2N519引脚数:3

  • 2N519最大耗散功率:0.1W

  • 2N519放大倍数

  • 2N519图片代号:D-9

  • 2N519vtest:15

  • 2N519htest:500100

  • 2N519atest:0

  • 2N519wtest:0.1

  • 2N519代换 2N519用什么型号代替:ASY26,ASY27,ASY76,ASY77,2N1303,3AK32,

2N519价格

参考价格:¥1.5643

型号:2N5190G 品牌:ON 备注:这里有2N519多少钱,2026年最近7天走势,今日出价,今日竞价,2N519批发/采购报价,2N519行情走势销售排行榜,2N519报价。
型号 功能描述 生产厂家 企业 LOGO 操作

NPN SILICON TRANSISTOR GENERAL PURPOSE POWER

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5190, 2N5191, and 2N5192 are Silicon NPN Expitaxial Base Power Transistors designed for Medium power amplifer and switching applications.

CENTRAL

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

JMNIC

锦美电子

TO-220

SILICON NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON NPN POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

SAVANTIC

Silicon NPN Power Transistors

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Silicon NPN Power Transistors

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

POWER TRANSISTORS SILICON NPN

Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195.

ONSEMI

安森美半导体

NPN EPITAXIAL SILICON POWER TRANSISTORS

NPN EPITAXIAL SILICON POWER TRANSISTORS Use in Medium Power Linear and Switching Applications

CDIL

NPN SILICON TRANSISTOR GENERAL PURPOSE POWER

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5190, 2N5191, and 2N5192 are Silicon NPN Expitaxial Base Power Transistors designed for Medium power amplifer and switching applications.

CENTRAL

SILICON NPN POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

SAVANTIC

MEDIUM POWER NPN SILICON TRANSISTORS

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. Features ■ NPN transistors Applications ■ Linear and switching

STMICROELECTRONICS

意法半导体

4.0 A,60 V,NPN 双极功率晶体管

The Power 4 A, 80 V Bipolar NPN Transistors is for use in power amplifier and switching circuits. This transistor has excellent safe area limits and is a complement to PNP 2N5194, 2N5195 • Pb-Free Packages are Available;

ONSEMI

安森美半导体

Silicon NPN Power Transistors

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Silicon NPN Power Transistors

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Silicon NPN Power Transistors

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

POWER TRANSISTORS SILICON NPN

Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195.

ONSEMI

安森美半导体

NPN SILICON TRANSISTOR GENERAL PURPOSE POWER

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5190, 2N5191, and 2N5192 are Silicon NPN Expitaxial Base Power Transistors designed for Medium power amplifer and switching applications.

CENTRAL

NPN EPITAXIAL SILICON POWER TRANSISTORS

NPN EPITAXIAL SILICON POWER TRANSISTORS Use in Medium Power Linear and Switching Applications

CDIL

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

JMNIC

锦美电子

TO-220

SILICON NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON NPN POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

4.0 A,80 V,NPN 双极功率晶体管

The Power 4 A, 80 V Bipolar NPN Transistors is for use in power amplifier and switching circuits. This transistor has excellent safe area limits and is a complement to PNP 2N5194, 2N5195 • Pb-Free Packages are Available;

ONSEMI

安森美半导体

MEDIUM POWER NPN SILICON TRANSISTORS

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. Features ■ NPN transistors Applications ■ Linear and switching

STMICROELECTRONICS

意法半导体

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

SAVANTIC

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 80V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) :1.4V(Max) @IC=4A

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Silicon NPN Power Transistors

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

PNP SILICON TRANSISTOR GENERAL PURPOSE POWER

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5193, 2N5194, and 2N5195 are Silicon PNP Expitaxial Base Power Transistors designed for Meium power amplifier and Switching applications.

CENTRAL

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190/5191/5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190,2N5191,2N5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190/5191/5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190/5191/5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190/5191/5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190,2N5191,2N5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

JMNIC

锦美电子

PNP SILICON TRANSISTOR GENERAL PURPOSE POWER

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5193, 2N5194, and 2N5195 are Silicon PNP Expitaxial Base Power Transistors designed for Meium power amplifier and Switching applications.

CENTRAL

Silicon PNP Power Transistors(4 AMPERE)

Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. Features • Pb−Free Packages are Available*

ONSEMI

安森美半导体

Silicon PNP Power Transistors(4 AMPERE)

Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. Features • Pb−Free Packages are Available*

ONSEMI

安森美半导体

PNP SILICON TRANSISTOR GENERAL PURPOSE POWER

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5193, 2N5194, and 2N5195 are Silicon PNP Expitaxial Base Power Transistors designed for Meium power amplifier and Switching applications.

CENTRAL

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190,2N5191,2N5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190/5191/5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SI PNP POWER BJT

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190/5191/5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

SAVANTIC

MEDIUM POWER PNP SILICON TRANSISTOR

DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package. It is inteded for use in medium power linear and switching applications. The complementary NPN type is 2N5192. ■ STMicroelectronics PREFERRED SALESTYPE ■ PNP TRANSISTOR) APPLICATIONS ■ LINEAR

STMICROELECTRONICS

意法半导体

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -80V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) :-1.4V(Max) @IC= -4A

ISC

无锡固电

N-Channel Dual Silicon Junction Field-Effect Transistor

• Differencial Inputs Absolute maximum ratings at TA = 25°C Reverse Gate Source & Gate Drain Voltage -50V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 300 mW Power Derating

INTERFET

MONOLITHIC DUAL N-CHANNEL JFETS

monolithic dual n-channel JFETs designed for..... ■ Differential Amplifiers ■ FET Input Op Amps BENEFITS ● Minimum System Error and Calibration 5mV Maximum Offset(2N196, 97) ● Low Drift 5μV/°C Maximum (2N5196) ● Simplifies Amplifier Design Low Output Conductance

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Monolithic N-Channel JFET Duals

DESCRIPTION The 2N5196/5197/5198/5199 JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VD

VISHAYVishay Siliconix

威世威世科技公司

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

INTERSIL

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

INTERSIL

2N519产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Polarity:

    NPN

  • Type:

    General Purpose

  • VCE(sat) Max (V):

    0.6

  • IC Cont. (A):

    4

  • VCEO Min (V):

    40

  • VCBO (V):

    40

  • VEBO (V):

    5

  • VBE(on) (V):

    1.2

  • hFE Min:

    25

  • hFE Max:

    100

  • fT Min (MHz):

    2

  • PTM Max (W):

    40

  • Package Type:

    TO-225-3

更新时间:2026-5-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
TO-126
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi
25+
TO-126
22360
样件支持,可原厂排单订货!
ON
22+
TO225
20000
公司只有原装 品质保证
ONSEMI/安森美
25+
TO-126
45000
ONSEMI/安森美全新现货2N5194即刻询购立享优惠#长期有排单订
ONSEMI
24+
NA
6300
只做原装正品现货 欢迎来电查询15919825718
ON
14+
TO225
930
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
23+
TO225
930
正规渠道,只有原装!
ON
24+
TO-225
8866
ONSEMI
20+
TO-126
462
全新 发货1-2天
on
25+
500000
行业低价,代理渠道

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