2N519晶体管资料

  • 2N519别名:2N519三极管、2N519晶体管、2N519晶体三极管

  • 2N519生产厂家:CSR_美国电子晶体管公司_IDI

  • 2N519制作材料:Ge-PNP

  • 2N519性质:低频或音频放大 (LF)_开关管 (S)

  • 2N519封装形式:直插封装

  • 2N519极限工作电压:15V

  • 2N519最大电流允许值

  • 2N519最大工作频率:>0.5MHZ

  • 2N519引脚数:3

  • 2N519最大耗散功率:0.1W

  • 2N519放大倍数

  • 2N519图片代号:D-9

  • 2N519vtest:15

  • 2N519htest:500100

  • 2N519atest:0

  • 2N519wtest:0.1

  • 2N519代换 2N519用什么型号代替:ASY26,ASY27,ASY76,ASY77,2N1303,3AK32,

2N519价格

参考价格:¥1.5643

型号:2N5190G 品牌:ON 备注:这里有2N519多少钱,2025年最近7天走势,今日出价,今日竞价,2N519批发/采购报价,2N519行情走势销售排行榜,2N519报价。
型号 功能描述 生产厂家&企业 LOGO 操作

NPN SILICON TRANSISTOR GENERAL PURPOSE POWER

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5190, 2N5191, and 2N5192 are Silicon NPN Expitaxial Base Power Transistors designed for Medium power amplifer and switching applications.

Central

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

ISC

无锡固电

TO-220

SILICON NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

SILICON NPN POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Silicon NPN Power Transistors

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Silicon NPN Power Transistors

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

SILICON NPN POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

JMNIC

锦美电子

NPN SILICON TRANSISTOR GENERAL PURPOSE POWER

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5190, 2N5191, and 2N5192 are Silicon NPN Expitaxial Base Power Transistors designed for Medium power amplifer and switching applications.

Central

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

SAVANTIC

POWER TRANSISTORS SILICON NPN

Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195.

ONSEMI

安森美半导体

MEDIUM POWER NPN SILICON TRANSISTORS

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. Features ■ NPN transistors Applications ■ Linear and switching

STMICROELECTRONICS

意法半导体

NPN EPITAXIAL SILICON POWER TRANSISTORS

NPN EPITAXIAL SILICON POWER TRANSISTORS Use in Medium Power Linear and Switching Applications

CDIL

Silicon NPN Power Transistors

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Silicon NPN Power Transistors

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Silicon NPN Power Transistors

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

NPN EPITAXIAL SILICON POWER TRANSISTORS

NPN EPITAXIAL SILICON POWER TRANSISTORS Use in Medium Power Linear and Switching Applications

CDIL

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

ISC

无锡固电

MEDIUM POWER NPN SILICON TRANSISTORS

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. Features ■ NPN transistors Applications ■ Linear and switching

STMICROELECTRONICS

意法半导体

NPN SILICON TRANSISTOR GENERAL PURPOSE POWER

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5190, 2N5191, and 2N5192 are Silicon NPN Expitaxial Base Power Transistors designed for Medium power amplifer and switching applications.

Central

POWER TRANSISTORS SILICON NPN

Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195.

ONSEMI

安森美半导体

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

JMNIC

锦美电子

TO-220

SILICON NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

SILICON NPN POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Silicon NPN Power Transistors

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Silicon NPN Power Transistors

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 80V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) :1.4V(Max) @IC=4A

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190,2N5191,2N5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190/5191/5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

SAVANTIC

PNP SILICON TRANSISTOR GENERAL PURPOSE POWER

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5193, 2N5194, and 2N5195 are Silicon PNP Expitaxial Base Power Transistors designed for Meium power amplifier and Switching applications.

Central

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190/5191/5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

PNP SILICON TRANSISTOR GENERAL PURPOSE POWER

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5193, 2N5194, and 2N5195 are Silicon PNP Expitaxial Base Power Transistors designed for Meium power amplifier and Switching applications.

Central

Silicon PNP Power Transistors(4 AMPERE)

Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. Features • Pb−Free Packages are Available*

ONSEMI

安森美半导体

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190,2N5191,2N5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190/5191/5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190/5191/5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190,2N5191,2N5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190/5191/5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

SAVANTIC

Silicon PNP Power Transistors(4 AMPERE)

Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. Features • Pb−Free Packages are Available*

ONSEMI

安森美半导体

MEDIUM POWER PNP SILICON TRANSISTOR

DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package. It is inteded for use in medium power linear and switching applications. The complementary NPN type is 2N5192. ■ STMicroelectronics PREFERRED SALESTYPE ■ PNP TRANSISTOR) APPLICATIONS ■ LINEAR

STMICROELECTRONICS

意法半导体

PNP SILICON TRANSISTOR GENERAL PURPOSE POWER

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5193, 2N5194, and 2N5195 are Silicon PNP Expitaxial Base Power Transistors designed for Meium power amplifier and Switching applications.

Central

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

SI PNP POWER BJT

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2N5190/5191/5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -80V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) :-1.4V(Max) @IC= -4A

ISC

无锡固电

N-Channel Dual Silicon Junction Field-Effect Transistor

• Differencial Inputs Absolute maximum ratings at TA = 25°C Reverse Gate Source & Gate Drain Voltage -50V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 300 mW Power Derating

InterFET

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

Intersil

MONOLITHIC DUAL N-CHANNEL JFETS

monolithic dual n-channel JFETs designed for..... ■ Differential Amplifiers ■ FET Input Op Amps BENEFITS ● Minimum System Error and Calibration 5mV Maximum Offset(2N196, 97) ● Low Drift 5μV/°C Maximum (2N5196) ● Simplifies Amplifier Design Low Output Conductance

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Monolithic N-Channel JFET Duals

DESCRIPTION The 2N5196/5197/5198/5199 JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VD

VishayVishay Siliconix

威世科技威世科技半导体

Monolithic N-Channel JFET Duals

DESCRIPTION The 2N5196/5197/5198/5199 JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VD

VishayVishay Siliconix

威世科技威世科技半导体

N-Channel Dual Silicon Junction Field-Effect Transistor

• Differencial Inputs Absolute maximum ratings at TA = 25°C Reverse Gate Source & Gate Drain Voltage -50V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 300 mW Power Derating

InterFET

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

Intersil

2N519产品属性

  • 类型

    描述

  • 型号

    2N519

  • 制造商

    ETCO

更新时间:2025-8-9 16:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2024
TO-126
70230
16余年资质 绝对原盒原盘代理渠道 更多数量
ON
24+
TO-225
8866
ST
23+
TO-126
16900
正规渠道,只有原装!
ON
1738+
TO-126
8529
科恒伟业!只做原装正品,假一赔十!
ST
54
全新原装 货期两周
ST
2025+
SOT-32
16000
原装优势绝对有货
MOTOROLA/摩托罗拉
23+
TO-59
8510
原装正品代理渠道价格优势
ST/意法
24+
TO-126
9600
原装现货,优势供应,支持实单!
三年内
1983
只做原装正品
ON/安森美
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

2N519数据表相关新闻