2N5195晶体管资料
2N5195别名：2N5195三极管、2N5195晶体管、2N5195晶体三极管
2N5195生产厂家：美国摩托罗拉半导体公司_美国国民半导体公司_德国电
2N5195制作材料：Si-PNP
2N5195性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N5195封装形式：直插封装
2N5195极限工作电压：80V
2N5195最大电流允许值：4A
2N5195最大工作频率：>2MHZ
2N5195引脚数：3
2N5195最大耗散功率：40W
2N5195放大倍数：
2N5195图片代号：B-21
2N5195vtest：80
2N5195htest：2000100
- 2N5195atest：4
2N5195wtest：40
2N5195代换 2N5195用什么型号代替：BD190,BD200,BD296,BD442,BD788,CD50B,MJE250,MJE251,MJE252,MJE253,MJE254,
2N5195价格
参考价格：￥2.2499
型号：2N5195 品牌：MULTICOMP 备注：这里有2N5195多少钱，2026年最近7天走势，今日出价，今日竞价，2N5195批发/采购报价，2N5195行情走势销售排行榜，2N5195报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N5195 | MEDIUM POWER PNP SILICON TRANSISTOR DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package. It is inteded for use in medium power linear and switching applications. The complementary NPN type is 2N5192. ■ STMicroelectronics PREFERRED SALESTYPE ■ PNP TRANSISTOR) APPLICATIONS ■ LINEAR | STMICROELECTRONICS 意法半导体 |   | |
2N5195 | Silicon PNP Power Transistors(4 AMPERE) Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. Features • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | | |
2N5195 | PNP SILICON TRANSISTOR GENERAL PURPOSE POWER DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5193, 2N5194, and 2N5195 are Silicon PNP Expitaxial Base Power Transistors designed for Meium power amplifier and Switching applications. | CENTRAL | | |
2N5195 | Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2N5190/5191/5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications | ISC 无锡固电 | | |
2N5195 | SI PNP POWER BJT DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N5195 | Silicon PNP Power Transistors DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N5195 | Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2N5190,2N5191,2N5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications | JMNIC 锦美电子 | | |
2N5195 | Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2N5190/5191/5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications | SAVANTIC | | |
2N5195 | Silicon PNP Power Transistors DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -40V(Min)-2N5193 = -60V(Min)-2N5194 = -80V(Min)-2N5195 • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2N5190/5191/5192 APPLICATIONS • Designed for use i | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N5195 | 4.0 A, 80 V PNP Bipolar Power Transistor The Power 4 A, 80 V Bipolar PNP Transistor is for use in power amplifier and switching circuits. It has excellent safe area limits and is complement to NPN 2N5191, 2N5192 • Pb-Free Packages are Available; | ONSEMI 安森美半导体 | | |
2N5195 | MEDIUM POWER PNP SILICON TRANSISTOR 文件：122.96 Kbytes Page：5 Pages | STMICROELECTRONICS 意法半导体 | | |
2N5195 | 封装/外壳：TO-225AA，TO-126-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 80V 4A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | |
2N5195 | PNP SILICON POWER TRANSISTORS 文件：518.63 Kbytes Page：2 Pages | CENTRAL | | |
2N5195 | Silicon PNP Power Transistors 文件：106.63 Kbytes Page：3 Pages | SAVANTIC | | |
2N5195 | Silicon PNP Power Transistors 文件：86.59 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | |
Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -80V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) :-1.4V(Max) @IC= -4A | ISC 无锡固电 | | ||
MEDIUM POWER PNP SILICON TRANSISTOR 文件：122.96 Kbytes Page：5 Pages | STMICROELECTRONICS 意法半导体 | | ||
Silicon PNP Power Transistors 文件：86.59 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Silicon PNP Power Transistors 4 AMPERE POWER TRANSISTORS PNP SILICON 60 ??80 VOLTS 文件：142.76 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 80V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | |
2N5195产品属性
- 类型
描述
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Polarity：
PNP
- Type：
General Purpose
- VCE(sat) Max (V)：
0.6
- IC Cont. (A)：
4
- VCEO Min (V)：
80
- VCBO (V)：
80
- VEBO (V)：
5
- VBE(on) (V)：
1.2
- hFE Min：
20
- hFE Max：
80
- fT Min (MHz)：
2
- PTM Max (W)：
40
- Package Type：
TO-225-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NJSEMI |
23+ |
NA |
1410 |
专做原装正品,假一罚百! |
|||
ON |
25+23+ |
TO-225 |
34445 |
绝对原装正品全新进口深圳现货 |
|||
ON |
22+ |
TO-220-3 |
50000 |
原装正品假一罚十,代理渠道价格优 |
|||
ON/安森美 |
21+ |
TO-225 |
8080 |
只做原装,质量保证 |
|||
ONSEMI/安森美 |
2025+ |
2500 |
原装进口价格优 请找坤融电子! |
||||
ON |
24+ |
N/A |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ON |
24+ |
TO-225 |
8866 |
||||
ON/安森美 |
25+ |
TO-225 |
30000 |
原装正品公司现货,假一赔十! |
|||
ON/安森美 |
2407+ |
TO-225 |
30098 |
全新原装!仓库现货,大胆开价! |
|||
ONSEMI |
2022+ |
TO-126 |
896 |
全新 发货1-2天 |
2N5195芯片相关品牌
2N5195规格书下载地址
2N5195参数引脚图相关
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DdatasheetPDF页码索引
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