2N5192晶体管资料

  • 2N5192别名:2N5192三极管、2N5192晶体管、2N5192晶体三极管

  • 2N5192生产厂家:美国摩托罗拉半导体公司_美国国民半导体公司_德国电

  • 2N5192制作材料:Si-NPN

  • 2N5192性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N5192封装形式:直插封装

  • 2N5192极限工作电压:80V

  • 2N5192最大电流允许值:4A

  • 2N5192最大工作频率:>2MHZ

  • 2N5192引脚数:3

  • 2N5192最大耗散功率:40W

  • 2N5192放大倍数

  • 2N5192图片代号:B-21

  • 2N5192vtest:80

  • 2N5192htest:2000100

  • 2N5192atest:4

  • 2N5192wtest:40

  • 2N5192代换 2N5192用什么型号代替:BD189,BD199,BD295,BD441,BD789,MJE240,MJE241,MJE242,MJE243,MJE244,3DD64C,

2N5192价格

参考价格:¥2.5448

型号:2N5192 品牌:STMicroelectronics 备注:这里有2N5192多少钱,2025年最近7天走势,今日出价,今日竞价,2N5192批发/采购报价,2N5192行情走势销售排行榜,2N5192报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N5192

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

SAVANTIC

2N5192

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

JMNIC

锦美电子

2N5192

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N5193/5194/5195 • Excellent safe operating area APPLICATIONS • For use in medium power linear and switching applications

ISC

无锡固电

2N5192

MEDIUM POWER NPN SILICON TRANSISTORS

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. Features ■ NPN transistors Applications ■ Linear and switching

STMICROELECTRONICS

意法半导体

2N5192

NPN EPITAXIAL SILICON POWER TRANSISTORS

NPN EPITAXIAL SILICON POWER TRANSISTORS Use in Medium Power Linear and Switching Applications

CDIL

2N5192

SILICON NPN POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N5192

POWER TRANSISTORS SILICON NPN

Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195.

ONSEMI

安森美半导体

2N5192

NPN SILICON TRANSISTOR GENERAL PURPOSE POWER

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5190, 2N5191, and 2N5192 are Silicon NPN Expitaxial Base Power Transistors designed for Medium power amplifer and switching applications.

Central

2N5192

TO-220

SILICON NPN POWER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N5192

NPN power transistors

文件:229.48 Kbytes Page:9 Pages

STMICROELECTRONICS

意法半导体

2N5192

封装/外壳:TO-225AA,TO-126-3 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 80V 4A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

2N5192

4.0 A,80 V,NPN 双极功率晶体管

ONSEMI

安森美半导体

2N5192

Silicon NPN Power Transistors

文件:106.31 Kbytes Page:3 Pages

SAVANTIC

2N5192

MEDIUM POWER NPN SILICON TRANSISTORS

文件:48.09 Kbytes Page:4 Pages

STMICROELECTRONICS

意法半导体

Silicon NPN Power Transistors

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Silicon NPN Power Transistors

Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 80V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) :1.4V(Max) @IC=4A

ISC

无锡固电

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 80V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

2N5192产品属性

  • 类型

    描述

  • 型号

    2N5192

  • 功能描述

    两极晶体管 - BJT NPN Power Switching

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-10-1 10:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
22+
TO-126
6000
十年配单,只做原装
ON/安森美
25+
SMD
8880
原装认准芯泽盛世!
STMicroelectronics
2022+
1
全新原装 货期两周
ON/安森美
23+
TO-126
50000
全新原装正品现货,支持订货
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
ON-SEMI
21+
2244
ON/安森美
23+
3557
原厂授权代理,海外优势订货渠道。可提供大量库存,详
ST
TO
8650
一级代理 原装正品假一罚十价格优势长期供货
三年内
1983
只做原装正品
ON/安森美
23+
NA
12730
原装正品代理渠道价格优势

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