Chip Type 2C2907A Geometry 0600 Polarity PNP

Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available

Type 2N2907AUB Geometry 0600 Polarity PNP

Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available

Silicon PNP Transistor

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2907AUBJ) • JANTX level (2N2907AUBJX) • JANTXV level (2N2907AUBJV) • JANS level (2N2907AUBJS) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

Surface Mount PNP General Purpose Transistor

Description: The 2N2907AUB, 2N2907AUBTX and 2N2907AUBTXV are miniature, hermetically sealed, ceramic surface mount general purpose switching transistors. The miniature three pin ceramic package is ideal for upgrading commercial grade circuits to military reliability levels where plastic SOT‐23 de

Surface Mount NP General Purpose Transistor

Features: ·Ceramic 4 pin surface mount package ·Miniature package to minimizae circuit board area ·Hermetically sealed ·Footprint and pin-out matches SOT-23 package transistors ·Processed per MIL-PRF-19500/291

PNP Silicon Switching -60V, -0.6A

This specification covers the performance requirements for PNP, silicon, switching 2N2906A and 2N2907A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type, and two levels of product assurance (JANHC and JANKC) are provided for ea The device package outlines for the encapsulated device types are as follows: Three terminal round metal can TO-206AA (formerly TO-18), four terminal surface mount device (SMD) package and three or four terminal SMD package.;

封装/外壳：3-LCC 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 0.6A SMD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：3-SMD，无引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 0.6A UB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Transistor PNP 60V 0.6A

RADIATION HARDENED

文件：105.73 Kbytes Page：6 Pages

Silicon PNP Transistor

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2907AUBJ) • JANTX level (2N2907AUBJX) • JANTXV level (2N2907AUBJV) • JANS level (2N2907AUBJS) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2

Surface Mount NP General Purpose Transistor

Features: ·Ceramic 4 pin surface mount package ·Miniature package to minimizae circuit board area ·Hermetically sealed ·Footprint and pin-out matches SOT-23 package transistors ·Processed per MIL-PRF-19500/291

Rad-hard 60 V, 0.6 A PNP transistor

Features • Hermetic packages • ESCC qualified • 100 krad Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and ava

Rad-hard 60 V, 0.6 A PNP transistor

Features • Hermetic packages • ESCC qualified • 100 krad Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and ava

PNP Silicon Switching -60V, -0.6A

This specification covers the performance requirements for PNP, silicon, switching 2N2906A and 2N2907A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type, and two levels of product assurance (JANHC and JANKC) are provided for ea The device package outlines for the encapsulated device types are as follows: Three terminal round metal can TO-206AA (formerly TO-18), four terminal surface mount device (SMD) package and three or four terminal SMD package.;

Rad-hard 60 V, 0.6 A PNP transistor

Features • Hermetic packages • ESCC qualified • 100 krad Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and ava

Surface Mount NP General Purpose Transistor

Features: ·Ceramic 4 pin surface mount package ·Miniature package to minimizae circuit board area ·Hermetically sealed ·Footprint and pin-out matches SOT-23 package transistors ·Processed per MIL-PRF-19500/291

Surface Mount NP General Purpose Transistor

Features: ·Ceramic 4 pin surface mount package ·Miniature package to minimizae circuit board area ·Hermetically sealed ·Footprint and pin-out matches SOT-23 package transistors ·Processed per MIL-PRF-19500/291

Hi-Rel 60 V, 0.6 A PNP transistor

文件：478.04 Kbytes Page：21 Pages

Hi-Rel 60 V, 0.6 A PNP transistor

文件：478.04 Kbytes Page：21 Pages

RADIATION HARDENED

文件：105.73 Kbytes Page：6 Pages

PNP switching transistors

DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS These transistor are silicon planar pitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose application.

Chip Type 2C2907A Geometry 0600 Polarity PNP

Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available

PNP switching transistors

DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

Amplifier Transistor

Amplifier Transistor PNP Silicon