PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

Chip Type 2C2907A Geometry 0600 Polarity PNP

Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available

Type 2N2907AUB Geometry 0600 Polarity PNP

Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available

Silicon PNP Transistor

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2907AUBJ) • JANTX level (2N2907AUBJX) • JANTXV level (2N2907AUBJV) • JANS level (2N2907AUBJS) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2

Surface Mount PNP General Purpose Transistor

Description: The 2N2907AUB, 2N2907AUBTX and 2N2907AUBTXV are miniature, hermetically sealed, ceramic surface mount general purpose switching transistors. The miniature three pin ceramic package is ideal for upgrading commercial grade circuits to military reliability levels where plastic SOT‐23 de

Surface Mount NP General Purpose Transistor

Features: ·Ceramic 4 pin surface mount package ·Miniature package to minimizae circuit board area ·Hermetically sealed ·Footprint and pin-out matches SOT-23 package transistors ·Processed per MIL-PRF-19500/291

RADIATION HARDENED

文件：105.73 Kbytes Page：6 Pages

封装/外壳：3-LCC 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 0.6A SMD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：3-SMD，无引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 0.6A UB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Transistor PNP 60V 0.6A

PNP Silicon Switching -60V, -0.6A

PNP switching transistors

DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

Chip Type 2C2907A Geometry 0600 Polarity PNP

Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS.

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS These transistor are silicon planar pitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose application.

PNP SILICON PLANAR TRANSISTORS

文件：41.15 Kbytes Page：2 Pages

Silicon PNP Transistor

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2907AUBJ) • JANTX level (2N2907AUBJX) • JANTXV level (2N2907AUBJV) • JANS level (2N2907AUBJS) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2

Surface Mount NP General Purpose Transistor

Features: ·Ceramic 4 pin surface mount package ·Miniature package to minimizae circuit board area ·Hermetically sealed ·Footprint and pin-out matches SOT-23 package transistors ·Processed per MIL-PRF-19500/291

Rad-hard 60 V, 0.6 A PNP transistor

Features • Hermetic packages • ESCC qualified • 100 krad Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and ava

Rad-hard 60 V, 0.6 A PNP transistor

Features • Hermetic packages • ESCC qualified • 100 krad Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and ava

Rad-hard 60 V, 0.6 A PNP transistor

Features • Hermetic packages • ESCC qualified • 100 krad Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and ava

Surface Mount NP General Purpose Transistor

Features: ·Ceramic 4 pin surface mount package ·Miniature package to minimizae circuit board area ·Hermetically sealed ·Footprint and pin-out matches SOT-23 package transistors ·Processed per MIL-PRF-19500/291

Surface Mount NP General Purpose Transistor

Features: ·Ceramic 4 pin surface mount package ·Miniature package to minimizae circuit board area ·Hermetically sealed ·Footprint and pin-out matches SOT-23 package transistors ·Processed per MIL-PRF-19500/291

Hi-Rel 60 V, 0.6 A PNP transistor

文件：478.04 Kbytes Page：21 Pages

Hi-Rel 60 V, 0.6 A PNP transistor

文件：478.04 Kbytes Page：21 Pages

RADIATION HARDENED

文件：105.73 Kbytes Page：6 Pages

PNP Silicon Switching -60V, -0.6A