Rad-hard 60 V, 0.6 A PNP transistor

Features • Hermetic packages • ESCC qualified • 100 krad Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and ava

Surface Mount NP General Purpose Transistor

Features: ·Ceramic 4 pin surface mount package ·Miniature package to minimizae circuit board area ·Hermetically sealed ·Footprint and pin-out matches SOT-23 package transistors ·Processed per MIL-PRF-19500/291

Surface Mount NP General Purpose Transistor

Features: ·Ceramic 4 pin surface mount package ·Miniature package to minimizae circuit board area ·Hermetically sealed ·Footprint and pin-out matches SOT-23 package transistors ·Processed per MIL-PRF-19500/291

PNP switching transistors

DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS These transistor are silicon planar pitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose application.

Chip Type 2C2907A Geometry 0600 Polarity PNP

Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available

PNP switching transistors

DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

Amplifier Transistor

Amplifier Transistor PNP Silicon