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2N2907A晶体管资料
2N2907A别名:2N2907A三极管、2N2907A晶体管、2N2907A晶体三极管
2N2907A生产厂家:法国巴黎珊斯公司_德国电子元件股份公司_美国得克萨
2N2907A制作材料:Si-PNP
2N2907A性质:通用型 (Uni)
2N2907A封装形式:直插封装
2N2907A极限工作电压:60V
2N2907A最大电流允许值:0.6A
2N2907A最大工作频率:<1MHZ或未知
2N2907A引脚数:3
2N2907A最大耗散功率:0.4W
2N2907A放大倍数:β>100
2N2907A图片代号:C-40
2N2907Avtest:60
2N2907Ahtest:999900
- 2N2907Aatest:.6
2N2907Awtest:.4
2N2907A代换 2N2907A用什么型号代替:BC528,BC638,BSW24,BSV47,BSV48,2N3485A,2N4026,2N4027,2N4028,2N4029,3DK9D,
2N2907A价格
参考价格:¥3.3163
型号:2N2907A 品牌:MULTICOMP 备注:这里有2N2907A多少钱,2024年最近7天走势,今日出价,今日竞价,2N2907A批发/采购报价,2N2907A行情走势销售排行榜,2N2907A报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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2N2907A | PNPswitchingtransistors DESCRIPTION PNPswitchingtransistorinaTO-18metalpackage. NPNcomplements:2N2222and2N2222A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.60V). APPLICATIONS •Switchingandlinearamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
2N2907A | ChipType2C2907AGeometry0600PolarityPNP Chiptype2C2907AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications. Features:Radiationgraphsavailable | Semicoa SEMICOA | ||
2N2907A | Type2N2907AGeometry0600PolarityPNP Chiptype2C2907AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications. Features:Radiationgraphsavailable | Semicoa SEMICOA | ||
2N2907A | PNPSILICONPLANARSWITCHINGTRANSISTORS SwitchingAndLinearApplicationDCtoVHFAmplifierApplications | bocaBoca semiconductor corporation 博卡博卡半导体公司 | ||
2N2907A | PNPSILICONPLANAREPITAXIALTRANSISTORS PNPSILICONPLANAREPITAXIALTRANSISTORS THE2N2907,2N2907A,PN2907,PN2907AAREPNPSILICONPLANAREPITAXIALTRANSISTORSFORGENERALPURPOSEAMPLIFIERSANDMEDIUMSPEEDSWITCHINGAPPLICATIONS. | MICRO-ELECTRONICS Micro Electronics | ||
2N2907A | PNPBIPOLARTRANSISTOR RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | ||
2N2907A | SILICONPNPTRANSISTOR DESCRIPTION The2N2907AisDesignedforGeneralPurposeAmplifierandSwitchingApplications. | ASI Advanced Semiconductor, Inc | ||
2N2907A | PNPSMALLSIGNALSILICONTRANSISTOR RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | ||
2N2907A | SmallSignalTransistors DESCRIPTION: TheCENTRALSEMICONDUCTOR2N3011isasiliconepitaxialplanarNPNtransistordesignedforultrahighspeedsaturatedswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | ||
2N2907A | SmallSignalGeneralPurposeTransistor(PNP) SmallSignalGeneralPurposeTransistor(PNP) Features •SwitchingandLinearApplication DCtoVHFAmplifierApplication •RoHSCompliant | TAITRON TAITRON | ||
2N2907A | PNPSiliconGeneralPurposeTransistor Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable2N2222A •IdealforMediumPowerAmplificationandSwitching | SECOS SeCoS Halbleitertechnologie GmbH | ||
2N2907A | SILICONPLANAREPITAXIALTRANSISTORS SILICONPLANAREPITAXIALTRANSISTORS The2N2907and2N2907aAarePNPtransistorsmountedinTO-18metalpackagewiththecollectorconnectedtothecase. Theyareprimarilyintendedforhighspeedswitching. NPNcomplementsare2N2222and2N2222A. CompliancetoRoHS | COMSET Comset Semiconductor | ||
2N2907A | SILICONPLANAREPITAXIALTRANSISTORS SILICONPLANAREPITAXIALTRANSISTORS The2N2907and2N2907aAarePNPtransistorsmountedinTO-18metalpackagewiththecollectorconnectedtothecase. Theyareprimarilyintendedforhighspeedswitching. NPNcomplementsare2N2222and2N2222A. CompliancetoRoHS | COMSET Comset Semiconductor | ||
2N2907A | PNPSwitchingTransistors Features •Highcurrent(max.600mA) •Lowvoltage(max.60V) •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
2N2907A | SwitchingTransistor SwitchingTransistor PNPSiliconEpitaxial Features •MIL−PRF−19500/291Qualified •AvailableasJAN,JANTX,andJANTXV •HermeticallySealedCommercialProductwithOptionforMilitaryTemperatureRangeScreening | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
2N2907A | PNPEPITAXIALPLANARTRANSISTOR Description The2N2907Aisdesignedforgeneralpurposeamplifierandhighspeed,medium-powerswitchingapplications. Features •LowCollectorSaturationvoltage. •HighSpeedSwitching. •ForComplementaryUsewithNPNTypeMPS2222A. | TGS Tiger Electronic Co.,Ltd | ||
2N2907A | SMALLSIGNALPNPTRANSISTORS DESCRIPTION The2N2905Aand2N2907AaresiliconPlanarEpitaxialPNPtransistorsinJedecTO-39(for2N2905A)andinJedecTO-18(for2N2907A)metalcase.Theyaredesignedforhighspeedsaturatedswitchingandgeneralpurposeapplications. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
2N2907A | GENERALPURPOSEAMPLIFIERSTRANSISTORS GENERALPURPOSEAMPLIFIERSTRANSISTORS The2N2907and2N2907AarePNPtransistorsmountedinTO-18metalpackagewiththecollectorconnectedtothecase. Theyareprimarilyintendedforhighspeedswitching. NPNcomplementsare2N2222and2N2222A. CompliancetoRoHS | COMSET Comset Semiconductor | ||
2N2907A | SurfaceMountDualPNPTransistor Description: The2N5796U(TX,TXV)arehermeticallysealed,ceramicsurfacemountdevices,consistingoftwoindividualsiliconPNPtransistors.Thesixpinceramicpackageisidealfordesignswhereboardspaceanddeviceweightareimportantdesignconsiderations. Features: ●Ceramic6pinsu | TTELECTT Electronics. 梯梯电子集成制造服务(苏州)有限公司 | ||
2N2907A | PNPSiliconEpitaxialPlanarTransistor PNPSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. ThetransistorissubdividedintoonegroupaccordingtoitsDCcurrentgain.AscomplementarytypetheNPNtransistorST2N2222andST2N2222Aarerecommended. Onspecialrequest,thesetransistorscanbemanu | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | ||
2N2907A | 60V0.6APNPSiliconAmplifierTransistor 60V0.6APNPSiliconAmplifierTransistor | FCI Amphenol ICC | ||
2N2907A | PNPSILICONPLANARSWITCHINGTRANSISTORS SwitchingAndLinearApplicationDCtoVHFAmplifierApplications | CDIL CDIL | ||
2N2907A | SiliconPNPtransistorinaTO-92PlasticPackage Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features LowLeakagecurrent,Lowcollectorsaturationvoltage. Applications Generalamplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | ||
2N2907A | SILICONPLANAREPITAXIALPNPTRANSISTOR FEATURES •SILICONPLANAREPITAXIALPNPTRANSISTOR •HIGHSPEEDSATURATEDSWITCHING •ALSOAVAILABLEINCERAMICSURFACEMOUNTPACKAGE •CECCSCREENINGOPTIONS •SPACEQUALITYLEVELSOPTIONS | TTELECTT Electronics. 梯梯电子集成制造服务(苏州)有限公司 | ||
2N2907A | T0-92Plastic-EncapsulateTransistors FEATURES ®ComplementaryNPNTypeavailable(MPS2222A) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
2N2907A | 封装/外壳:TO-206AA,TO-18-3 金属罐 包装:剪切带(CT)带盒(TB) 描述:TRANS PNP 60V 0.6A TO18 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
2N2907A | 封装/外壳:TO-206AA,TO-18-3 金属罐 包装:管件 描述:TRANS PNP 40V 0.6A TO18 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
2N2907A | GeneralPurposePNPTransistors 文件:157.15 Kbytes Page:2 Pages | DiotecDIOTEC 德欧泰克 | ||
2N2907A | PNPSILICONTRANSISTOR 文件:531.8 Kbytes Page:2 Pages | CentralCentral Semiconductor Corp 美国中央半导体 | ||
2N2907A | SiliconPNPTransistor 文件:212.44 Kbytes Page:2 Pages | Semicoa SEMICOA | ||
2N2907A | RADIATIONHARDENED 文件:105.73 Kbytes Page:6 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | ||
2N2907A | PNPSwitchingTransistors 文件:459.29 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
2N2907A | PNPSILICONTRANSISTOR 文件:531.8 Kbytes Page:2 Pages | CentralCentral Semiconductor Corp 美国中央半导体 | ||
2N2907A | MediumCurrentGeneralPurposeAmplifiersandSwitches 文件:777.48 Kbytes Page:12 Pages | RAYTHEONRaytheon Company. 雷神 | ||
2N2907A | SILICONPLANAREPITAXIALPNPTRANSISTOR 文件:239.37 Kbytes Page:3 Pages | SEME-LAB Seme LAB | ||
2N2907A | HIGHSPEEDMEDIUMPOWERPNPSWITCHINGTRANSISTOR 文件:15.38 Kbytes Page:2 Pages | SEME-LAB Seme LAB | ||
PNPswitchingtransistors DESCRIPTION PNPswitchingtransistorinaTO-18metalpackage. NPNcomplements:2N2222and2N2222A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.60V). APPLICATIONS •Switchingandlinearamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
1.8WPNPGENERALPURPOSESAMLLSIGNALTRANSISTORS 1.8WPNPGENERALPURPOSESAMLLSIGNALTRANSISTORS ThesetransistoraresiliconplanarpitaxialpnpdevicesconformingtoJEDECTO-18,BSSO-132AandIECC7/B11outlines. Theyaredesignedforhighspeedsaturatedswitchingandgeneralpurposeapplication. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
ChipType2C2907AGeometry0600PolarityPNP Chiptype2C2907AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications. Features:Radiationgraphsavailable | Semicoa SEMICOA | |||
PNPSILICONPLANAREPITAXIALTRANSISTORS PNPSILICONPLANAREPITAXIALTRANSISTORS THE2N2907,2N2907A,PN2907,PN2907AAREPNPSILICONPLANAREPITAXIALTRANSISTORSFORGENERALPURPOSEAMPLIFIERSANDMEDIUMSPEEDSWITCHINGAPPLICATIONS. | MICRO-ELECTRONICS Micro Electronics | |||
PNPSILICONPLANARTRANSISTORS 文件:41.15 Kbytes Page:2 Pages | SIEMENS Siemens Ltd | |||
PNPSwitchingTransistors Features •Highcurrent(max.600mA) •Lowvoltage(max.60V) •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
SWITCHINGTRANSISTORPNPSILICON FEATURES: ■ELECTRICALPERFORMANCEI.A.W.MIL-PRF-19500/291 ■AVAILABLEINWAFERORCHIPFORMFORHYBRIDAPPLICATIONS ■GENERALPURPOSE-HIGHSPEEDSWITCHINGAPPLICATIONS ■LOWVCE(sat):.4V@IC=150mAdc | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
Hi-Rel60V-0.6APNPtransistor Description The2N2907AHRisasiliconplanarPNPtransistorspecificallydesignedandhousedinhermeticpackagesforaerospaceandHi-Relapplications.ItisavailableintheJANqualificationsystem(MIL-PRF19500compliance)andintheESCCqualificationsystem(ESCC5000compliance).Incase | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Rad-hard60V,0.6APNPtransistor Features •Hermeticpackages •ESCCqualified •100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
PNPSMALLSIGNALSILICONTRANSISTOR RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SURFACEMOUNTQUADPNPTRANSISTOR DESCRIPTION The2N2907AQ–LCC20isa20pad,hermeticallysealed,CeramicSurfaceMountTransistorarray,consistingoffour2N2907AsiliconPNPtransistordie. FEATURES •FOURINDEPENDENTTRANSISTORSINA0.35INCHSQUARECERAMICPACKAGE •SURFACEMOUNTABLE •HERMETICALLYSEALEDPACKAGE •SC | SEME-LAB Seme LAB | |||
SURFACEMOUNTQUADPNPTRANSISTOR DESCRIPTION The2N2907AQ–LCC20isa20pad,hermeticallysealed,CeramicSurfaceMountTransistorarray,consistingoffour2N2907AsiliconPNPtransistordie. FEATURES •FOURINDEPENDENTTRANSISTORSINA0.35INCHSQUARECERAMICPACKAGE •SURFACEMOUNTABLE •HERMETICALLYSEALEDPACKAGE •SC | SEME-LAB Seme LAB | |||
Rad-hard60V,0.6APNPtransistor Features •Hermeticpackages •ESCCqualified •100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Rad-hard60V,0.6APNPtransistor Features •Hermeticpackages •ESCCqualified •100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Rad-hard60V,0.6APNPtransistor Features •Hermeticpackages •ESCCqualified •100krad Description The2N2907AHRisabipolartransistorabletooperateundersevereenvironment conditionsandradiationexposureprovidinghighimmunitytototalionizingdose (TID). QualifiedasperESCC5202/001specificationandava | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
GeneralPurposeTransistor GeneralPurposeTransistor PNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT-23packagewhichisdesignedforlowpowersurfacemountapplications. Features •WedeclarethatthematerialofproductcompliancewithRoHSrequiremen | FS First Silicon Co., Ltd | |||
GeneralPurposeTransistor GeneralPurposeTransistor PNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSC-323/SC−70packagewhichisdesignedforlowpowersurfacemountapplications. Features •WedeclarethatthematerialofproductcompliancewithRoHSrequ | FS First Silicon Co., Ltd | |||
SurfaceMountNPNGeneralPurposeTransistor Description: The2N2907AUA(TX,TXV)isahermeticallysealedceramicsurfacemountgeneralpurposeswitchingtransistor.Theminiaturefourpinceramicpackageisidealfordesignswhereboardspaceanddeviceweightareimportantdesignconsiderations.The“UA”suffixdenotesthe4terminallea | TTELECTT Electronics. 梯梯电子集成制造服务(苏州)有限公司 | |||
PNPSMALLSIGNALSILICONTRANSISTOR RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
ChipType2C2907AGeometry0600PolarityPNP Chiptype2C2907AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications. Features:Radiationgraphsavailable | Semicoa SEMICOA | |||
Type2N2907AUBGeometry0600PolarityPNP Chiptype2C2907AbySemicoaSemiconductorsprovidesperformancesimilartothesedevices. ProductSummary: APPLICATIONS:Designedforgeneralpurposeswitchingandamplifierapplications. Features:Radiationgraphsavailable | Semicoa SEMICOA | |||
SurfaceMountPNPGeneralPurposeTransistor Description: The2N2907AUB,2N2907AUBTXand2N2907AUBTXVareminiature,hermeticallysealed,ceramicsurfacemountgeneralpurposeswitchingtransistors.TheminiaturethreepinceramicpackageisidealforupgradingcommercialgradecircuitstomilitaryreliabilitylevelswhereplasticSOT‐23de | TTELECTT Electronics. 梯梯电子集成制造服务(苏州)有限公司 | |||
PNPSMALLSIGNALSILICONTRANSISTOR RADIATIONHARDENEDPNPSILICONSWITCHINGTRANSISTOR QualifiedperMIL-PRF-19500/291 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SiliconPNPTransistor Description SemicoaSemiconductorsoffers: •ScreeningandprocessingperMIL-PRF-19500AppendixE •JANlevel(2N2907AUBJ) •JANTXlevel(2N2907AUBJX) •JANTXVlevel(2N2907AUBJV) •JANSlevel(2N2907AUBJS) •QCItotheapplicablelevel •100dievisualinspectionperMIL-STD-750method2 | Semicoa SEMICOA |
2N2907A产品属性
- 类型
描述
- 型号
2N2907A
- 功能描述
两极晶体管 - BJT PNP Gen Pur SS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
TO-18 |
20000 |
全新原装假一赔十 |
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MOTOROLA/摩托罗拉 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
MSCI |
三年内 |
1983 |
纳立只做原装正品13590203865 |
||||
MICROCHIP(美国微芯) |
23+ |
TO-18 |
924 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
TT Electronics/Optek Technolog |
23+ |
4-CLCC |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
ST Microelectronics |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
|||
蓝箭 |
23+ |
NA/ |
6000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Central |
21+ |
N/A |
10000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Microsemi |
1942+ |
N/A |
944 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
|||
ST |
22+ |
N/A |
5000 |
挂了就有,工厂库存,YX价优 |
2N2907A规格书下载地址
2N2907A参数引脚图相关
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- 2N292
- 2N2919U
- 2N2919L
- 2N2919A
- 2N2919(A)
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- 2N2917
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- 2N2911
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- 2N2907LT1
- 2N29071
- 2N2907
- 2N2906U
- 2N2906E
- 2N2906A
- 2N2906
- 2N2905L
- 2N2905A
- 2N2905(A,S)
- 2N2905
- 2N2904U
- 2N2904L
- 2N2904J
- 2N2904E
- 2N2904A
- 2N2904(S)
- 2N2904(AS)
- 2N2904
- 2N2903A
- 2N2903(A)
- 2N2903
- 2N2901
- 2N2900
- 2N290
- 2N29
- 2N2899
- 2N2898
- 2N2897
- 2N2896
- 2N2895
- 2N2894(A)
- 2N2893
- 2N2892
- 2N2891
2N2907A数据表相关新闻
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2023-2-212MBI450VJ-120-50
2MBI450VJ-120-50,全新原装,门市自取或当天发货。
2022-7-62N3773
2N3773,全新原装当天发货或门市自取0755-82732291.
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2019-7-172N3499铁帽现货供应
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DdatasheetPDF页码索引
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