PNP BIPOLAR TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

PNP switching transistors

DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

PNP SILICON PLANAR SWITCHING TRANSISTORS

Switching And Linear Application DC to VHF Amplifier Applications

SILICON PNP TRANSISTOR

DESCRIPTION The 2N2907A is Designed for General Purpose Amplifier and Switching Applications.

PNP SILICON PLANAR SWITCHING TRANSISTORS

Switching And Linear Application DC to VHF Amplifier Applications

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

Switching Transistor

Switching Transistor PNP Silicon Epitaxial Features • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military Temperature Range Screening

60V 0.6A PNP Silicon Amplifier Transistor

60V 0.6A PNP Silicon Amplifier Transistor

PNP Switching Transistors

Features • High current (max.600mA) • Low voltage (max.60V) • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information)

Chip Type 2C2907A Geometry 0600 Polarity PNP

Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available

Type 2N2907A Geometry 0600 Polarity PNP

Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A . Compliance to RoHS

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A . Compliance to RoHS

GENERAL PURPOSE AMPLIFIERS TRANSISTORS

GENERAL PURPOSE AMPLIFIERS TRANSISTORS The 2N2907 and 2N2907A are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A . Compliance to RoHS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS.

PNP Silicon General Purpose Transistor

Features • Epitaxial Planar Die Construction • Complementary NPN Type Available 2N2222A • Ideal for Medium Power Amplification and Switching

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be manu

Small Signal General Purpose Transistor (PNP)

Small Signal General Purpose Transistor (PNP) Features • Switching and Linear Application DC to VHF Amplifier Application • RoHS Compliant

PNP EPITAXIAL PLANAR TRANSISTOR

Description The 2N2907A is designed for general purpose amplifier and high speed, medium-power switching applications. Features • Low Collector Saturation voltage. • High Speed Switching. • For Complementary Use with NPN Type MPS2222A.

SMALL SIGNAL PNP TRANSISTORS

DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications.

T0-92 Plastic-Encapsulate Transistors

FEATURES ® Complementary NPN Type available (MPS2222A)

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features Low Leakage current, Low collector saturation voltage. Applications General amplifier.

Surface Mount Dual PNP Transistor

Description: The 2N5796U (TX, TXV) are hermetically sealed, ceramic surface mount devices, consisting of two individual silicon PNP transistors. The six pin ceramic package is ideal for designs where board space and device weight are important design considerations. Features: ● Ceramic 6 pin su

SILICON PLANAR EPITAXIAL PNP TRANSISTOR

FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • HIGH SPEED SATURATED SWITCHING • ALSO AVAILABLE IN CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS

封装/外壳：TO-206AA，TO-18-3 金属罐 包装：管件 描述：TRANS PNP 40V 0.6A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-206AA，TO-18-3 金属罐 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 60V 0.6A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

中等功率双极型晶体管

Bipolar Transistors

Switching Transistor

HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR

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Silicon PNP Transistor

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Medium Current General Purpose Amplifiers and Switches

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SILICON PLANAR EPITAXIAL PNP TRANSISTOR

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PNP Switching Transistors

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PNP SILICON TRANSISTOR

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PNP SILICON TRANSISTOR

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General Purpose PNP Transistors

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RADIATION HARDENED

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PNP switching transistors

DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

Chip Type 2C2907A Geometry 0600 Polarity PNP

Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS.

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS These transistor are silicon planar pitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose application.

PNP SILICON PLANAR TRANSISTORS

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PNP Switching Transistors

Features • High current (max.600mA) • Low voltage (max.60V) • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information)

SWITCHING TRANSISTOR PNP SILICON

FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc

Hi-Rel 60 V - 0.6 A PNP transistor

Description The 2N2907AHR is a silicon planar PNP transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case

Rad-hard 60 V, 0.6 A PNP transistor

Features • Hermetic packages • ESCC qualified • 100 krad Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and ava

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

SURFACE MOUNT QUAD PNP TRANSISTOR

DESCRIPTION The 2N2907AQ–LCC20 is a 20 pad, hermetically sealed, Ceramic Surface Mount Transistor array, consisting of four 2N2907A silicon PNP transistor die. FEATURES • FOUR INDEPENDENT TRANSISTORS IN A 0.35 INCH SQUARE CERAMIC PACKAGE • SURFACE MOUNTABLE • HERMETICALLY SEALED PACKAGE • SC

SURFACE MOUNT QUAD PNP TRANSISTOR

DESCRIPTION The 2N2907AQ–LCC20 is a 20 pad, hermetically sealed, Ceramic Surface Mount Transistor array, consisting of four 2N2907A silicon PNP transistor die. FEATURES • FOUR INDEPENDENT TRANSISTORS IN A 0.35 INCH SQUARE CERAMIC PACKAGE • SURFACE MOUNTABLE • HERMETICALLY SEALED PACKAGE • SC

Rad-hard 60 V, 0.6 A PNP transistor

Features • Hermetic packages • ESCC qualified • 100 krad Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and ava

Rad-hard 60 V, 0.6 A PNP transistor

Features • Hermetic packages • ESCC qualified • 100 krad Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and ava

Rad-hard 60 V, 0.6 A PNP transistor

Features • Hermetic packages • ESCC qualified • 100 krad Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and ava

General Purpose Transistor

General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-23 package which is designed for low power surface mount applications. Features • We declare that the material of product compliance with RoHS requiremen

General Purpose Transistor

General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-323/SC−70 package which is designed for low power surface mount applications. Features • We declare that the material of product compliance with RoHS requ

Surface Mount PNP General Purpose Transistor

Features: ·Ceramic 4 pin surface mount package ·Miniature package to minimizae circuit board area ·Hermetically sealed ·Processed per MIL-PRF-19500/291

Surface Mount NPN General Purpose Transistor

Description: The 2N2907AUA (TX, TXV) is a hermetically sealed ceramic surface mount general purpose switching transistor. The miniature four pin ceramic package is ideal for designs where board space and device weight are important design considerations. The “UA” suffix denotes the 4 terminal lea

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

Surface Mount PNP General Purpose Transistor

Features: ·Ceramic 4 pin surface mount package ·Miniature package to minimizae circuit board area ·Hermetically sealed ·Processed per MIL-PRF-19500/291