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2N2907晶体管资料
2N2907别名：2N2907三极管、2N2907晶体管、2N2907晶体三极管
2N2907生产厂家：德国AEG公司_DIT_美国、法国费兰第有限公司_美国通
2N2907制作材料：Si-PNP
2N2907性质：通用型 （Uni）
2N2907封装形式：直插封装
2N2907极限工作电压：60V
2N2907最大电流允许值：0.6A
2N2907最大工作频率：<1MHZ或未知
2N2907引脚数：3
2N2907最大耗散功率：0.4W
2N2907放大倍数：β=300
2N2907图片代号：A-31
2N2907vtest：60
2N2907htest：999900
- 2N2907atest：0.6
2N2907wtest：0.4
2N2907代换 2N2907用什么型号代替：BC528,BC638,BSW24,BSV47,BSV48,2N3486,3CK9D,
2N2907价格
参考价格：￥3.9819
型号：2N2907 品牌：MULTICOMP 备注：这里有2N2907多少钱，2025年最近7天走势，今日出价，今日竞价，2N2907批发/采购报价，2N2907行情走势销售排行榜，2N2907报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N2907 | 1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS 1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS These transistor are silicon planar pitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose application. | STMICROELECTRONICS 意法半导体 |   | |
2N2907 | PNP switching transistors DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification. | Philips 飞利浦 | | |
2N2907 | Chip Type 2C2907A Geometry 0600 Polarity PNP Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available | Semicoa | | |
2N2907 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS PNP SILICON PLANAR EPITAXIAL TRANSISTORS THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. | MICRO-ELECTRONICS | | |
2N2907 | SILICON PNP TRANSISTOR DESCRIPTION The 2N2907A is Designed for General Purpose Amplifier and Switching Applications. | ASI | | |
2N2907 | GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907) metal case. They are designed for high speed saturated switching and general purpose application. 2N2905 approved to CECC 50002-102, 2N2907 approved to | STMICROELECTRONICS 意法半导体 | | |
2N2907 | SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A . Compliance to RoHS | COMSET | | |
2N2907 | SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A . Compliance to RoHS | COMSET | | |
2N2907 | PNP Switching Transistors Features • High current (max.600mA) • Low voltage (max.60V) • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) | MCC | | |
2N2907 | Surface Mount Quad PNP Transistor Description: The 2N6987U (TX, TXV) is a hermeƟcally sealed, ceramic surface‐mount device, consisƟng of 4 silicon PNP transistors. The 20 pin ceramic package is ideal for designs where board space and device weight are important design consideraƟons. Features: • Ceramic 20 pin surface mount | TTELEC | | |
2N2907 | Silicon PNP transistor in a TO-92 Plastic Package Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features Low Leakage current, Low collector saturation voltage. Applications General amplifier. | FOSHAN 蓝箭电子 | | |
2N2907 | PNP Silicon Epitaxial Planar Transistor PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be manu | SEMTECH_ELEC 先之科半导体 | | |
2N2907 | GENERAL PURPOSE AMPLIFIERS TRANSISTORS GENERAL PURPOSE AMPLIFIERS TRANSISTORS The 2N2907 and 2N2907A are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A . Compliance to RoHS | COMSET | | |
2N2907 | PNP Silicon Epitaxial Planar Transistor PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be | DGNJDZ 南晶电子 | | |
2N2907 | PNP SILICON PLANAR SWITCHING TRANSISTORS PNP SILICON PLANAR SWITCHING TRANSISTORS Switching and Linear Application | CDIL | | |
2N2907 | 20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A GENERAL PURPOSE TRANSISTOR PNP SILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N2907 | PNP SILICON PLANEX TRANSISTOR GENERAL PURPOSE TRANSISTOR PNP SILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N2907 | 小信号晶体管 | STMICROELECTRONICS 意法半导体 | | |
2N2907 | 中等功率双极型晶体管 | MCC | | |
2N2907 | PNP Silicon Switching -60V, -0.6A | Microchip 微芯科技 | | |
2N2907 | PNP SILICON TRANSISTOR 文件：531.8 Kbytes Page：2 Pages | Central | | |
2N2907 | 封装/外壳：TO-206AA，TO-18-3 金属罐 包装：剪切带（CT） 描述：TRANS PNP 40V 0.6A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | |
2N2907 | 封装/外壳：TO-206AA，TO-18-3 金属罐 包装：管件 描述：TRANS PNP 40V 0.6A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
2N2907 | PNP SILICON TRANSISTOR 文件：531.8 Kbytes Page：2 Pages | Central | | |
2N2907 | Medium Current General Purpose Amplifiers and Switches 文件：777.48 Kbytes Page：12 Pages | RAYTHEON 雷神 | | |
2N2907 | Bipolar PNP Device in a Hermetically sealed TO18 Metal Package 文件：11.21 Kbytes Page：1 Pages | SEME-LAB Seme LAB | | |
2N2907 | PNP Switching Transistors 文件：459.29 Kbytes Page：3 Pages | MCC | | |
2N2907 | PNP SILICON PLANAR TRANSISTORS 文件：41.15 Kbytes Page：2 Pages | SIEMENS 西门子 | | |
GENERAL PURPOSE AMPLIFIERS TRANSISTORS GENERAL PURPOSE AMPLIFIERS TRANSISTORS The 2N2907 and 2N2907A are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A . Compliance to RoHS | COMSET | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | | ||
SWITCHING TRANSISTOR PNP SILICON FEATURES: ■ ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 ■ AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS ■ GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS ■ LOW VCE(sat): .4V @ IC = 150 mAdc | Microsemi 美高森美 | |
2N2907产品属性
- 类型
描述
- 型号
2N2907
- 功能描述
两极晶体管 - BJT PNP Silicon
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP(美国微芯) |
24+ |
TO-18 |
924 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
MOTOROLA/摩托罗拉 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
MOTOROLA/摩托罗拉 |
25+ |
CAN3 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ST/意法 |
22+ |
TO |
100000 |
代理渠道/只做原装/可含税 |
|||
ST |
2024 |
TO-18 |
13500 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
CDIL |
25+ |
PBFREETO-18 |
880000 |
明嘉莱只做原装正品现货 |
|||
ST(意法) |
24+ |
N/A |
31048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ST |
25+23+ |
TO |
28773 |
绝对原装正品全新进口深圳现货 |
|||
CEN |
24+ |
TO18 |
165 |
||||
MSC |
190 |
公司优势库存 热卖中!!! |
2N2907规格书下载地址
2N2907参数引脚图相关
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- 485接口
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- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2n3904
- 2N2923
- 2N2922
- 2N2921
- 2N2920U
- 2N2920L
- 2N2920A
- 2N2920(A)
- 2N2920
- 2N292(A)
- 2N292
- 2N2919U
- 2N2919L
- 2N2919A
- 2N2919(A)
- 2N2919
- 2N2918
- 2N2917
- 2N2916A
- 2N2916(A)
- 2N2916
- 2N2915A
- 2N2915(A)
- 2N2915
- 2N2914
- 2N2913
- 2N2912
- 2N2911
- 2N2910
- 2N291
- 2N2909
- 2N2908
- 2N2907LT1
- 2N2907A
- 2N29071
- 2N2906U
- 2N2906E
- 2N2906A
- 2N2906
- 2N2905L
- 2N2905A
- 2N2905(A,S)
- 2N2905
- 2N2904U
- 2N2904L
- 2N2904J
- 2N2904E
- 2N2904A
- 2N2904(S)
- 2N2904(AS)
- 2N2904
- 2N2903A
- 2N2903(A)
- 2N2903
- 2N2901
- 2N2900
- 2N290
- 2N29
- 2N2899
- 2N2898
- 2N2897
- 2N2896
- 2N2895
- 2N2894(A)
- 2N2893
- 2N2892
- 2N2891
- 2N2890
2N2907数据表相关新闻
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DdatasheetPDF页码索引
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