PNP Silicon Switching -60V, -0.6A

This specification covers the performance requirements for PNP, silicon, switching 2N2906A and 2N2907A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type, and two levels of product assurance (JANHC and JANKC) are provided for ea The device package outlines for the encapsulated device types are as follows: Three terminal round metal can TO-206AA (formerly TO-18), four terminal surface mount device (SMD) package and three or four terminal SMD package.;

封装/外壳：3-SMD，无引线 包装：散装 描述：SMALL-SIGNAL BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：3-SMD，无引线 包装：散装 描述：SMALL-SIGNAL BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP switching transistors

DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS These transistor are silicon planar pitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose application.

Chip Type 2C2907A Geometry 0600 Polarity PNP

Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Radiation graphs available

PNP switching transistors

DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

Amplifier Transistor

Amplifier Transistor PNP Silicon