位置:首页 > IC中文资料第289页 > 1S20
型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
1S20 | SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 60 Volts IO: 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Low leakge * Pb / RoHS Free | EIC | ||
1S20 | 1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts Features · Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · Low power loss, high efficiency · High current capability, Low forward voltage drop · High surge capability · Metal silicon junction, majority carrier conduction | MCC | ||
1S20 | SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere FEATURES * Low power loss, high efficiency * Low leakage * Low forward voltage * High current capability * High speed switching * High surge capabitity * High reliability | RECTRON 丽正国际 | ||
1S20 | SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 20 --- 100 V CURRENT: 1.0 A FEATURES ◇ Low switcing noise ◇ Low forward voltage drop ◇ High current capability ◇ High switching capability ◇ High surge capability ◇ High reliability | BILIN 银河微电 | ||
1S20 | 1.0Amp Schottky Barrier Rectifier Features · Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · Low power loss, high efficiency · High current capability, Low forward voltage drop · High surge capability · Metal silicon junction, majority carrier conduction | CHENYI 商朗电子 | ||
1S20 | CURRENT 1.0Ampere VOLTAGE 20 to 40 Volts Features · Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 · Metal silicon junction, majority carrier conduction · Low power loss, high efficiency · High current capability, Low forward voltage drop · High surge capability · For use in low volt | DAESAN | ||
1S20 | SCHOTTKY BARRIER RECTIFIER FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Metal silicon junction,majority carrier conduction ● Low power loss,high efficiency ● High forward surge current capability ● High temperature soldering guaranteed: 250oC/10 seco | DIOTECH | ||
1S20 | 1.0 AMP SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction | FORMOSA 美丽微半导体 | ||
1S20 | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 1.0Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Low power loss ,high efficiency • High current capability ,Low forward voltage drop • | JINANJINGHENG 晶恒集团 | ||
1S20 | VOLTAGE 20V ~ 60V 1.0AMP Schottky Barrier Rectifiers FEATURES *Low forward voltage drop *High current capability *High reliability *High surge current capability *Epitaxial construction | SECOS 喜可士 | ||
1S20 | SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High fo | SY 顺烨电子 | ||
1S20 | 1.0 AMP SCHOTTKY BARRIER RECTIFIERS FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction | UNIOHMUniohm 台湾厚声 | ||
1S20 | 1.0 AMP. SCHOTTKY BARRIER RECTIFIERS Features ● Guardring for overvoltage protection ● Very small conduction losses ● Extremely fast switching ● High forward surge capability ● High frequency operation ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications For use in low voltage high frequency inverters, free | YANGJIE 扬杰电子 | ||
1S20 | Schottky Barrier Rectifier Features ● Guardring for overvoltage protection ● Very small conduction losses ● Extremely fast switching ● High forward surge capability ● High frequency operation ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications For use in low voltage high frequency inverters, free | YANGJIE 扬杰电子 | ||
1S20 | SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forwar | CHENDA 辰达半导体 | ||
1S20 | VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere FEATURES * Low power loss, high efficiency * Low leakage * Low forward voltage * High current capability * High speed switching * High surge capabitity * High reliability | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 | ||
1S20 | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 1.0Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Low power loss ,high efficiency • High current capability ,Low forward voltage drop • | JINGHENG 晶恒 | ||
1S20 | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | ||
1S20 | SCHOTTKY BARRIER RECTIFIER FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Low power loss ,high efficiency High current capability ,Low forward voltage drop High surge capability For use in low voltage ,high frequency inverters | SAMYANG 三阳电子 | ||
1S20 | 1.0 AMP. Schottky Barrier Rectifiers 文件:792.9 Kbytes Page:2 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | ||
1S20 | MINIATURE SCHOTTKY BARRIER RECTIFIER 文件:270.37 Kbytes Page:3 Pages | HORNBY 南通康比电子 | ||
1S20 | SCHOTTKY BARRIER RECTIFIER 文件:58.1 Kbytes Page:2 Pages | JINANJINGHENG 晶恒集团 | ||
1S20 | SCHOTTKY BARRIER RECTIFIER 文件:259.459 Kbytes Page:2 Pages | SHUNYE 顺烨电子 | ||
1S20 | SCHOTTKY BARRIER RECTIFIERS 文件:404.63 Kbytes Page:2 Pages | DSK | ||
1S20 | MINIATURE SCHOTTKY BARRIER RECTIFIER 文件:440.38 Kbytes Page:2 Pages | KOOCHIN 灏展电子 | ||
1S20 | 1.0 AMP SCHOTTKY BARRIER RECTIFIERS 文件:64.489 Kbytes Page:2 Pages | GWSEMI 唯圣电子 | ||
1S20 | 1.0A Axial Leaded Schottky Barrier Rectifier 文件:344.09 Kbytes Page:2 Pages | SUNMATE 森美特 | ||
1S20 | SCHOTTKY BARRIER RECTIFIER 文件:27 Kbytes Page:2 Pages | RECTRON 丽正国际 | ||
1S20 | 1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件:448.02 Kbytes Page:4 Pages | MCC | ||
SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere FEATURES * Low power loss, high efficiency * Low leakage * Low forward voltage * High current capability * High speed switching * High surge capabitity * High reliability | RECTRON 丽正国际 | |||
SCHOTTKY BARRIER RECTIFIER FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Low power loss ,high efficiency High current capability ,Low forward voltage drop High surge capability For use in low voltage ,high frequency inverters | SAMYANG 三阳电子 | |||
SCHOTTKY BARRIER RECTIFIER FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Low power loss ,high efficiency High current capability ,Low forward voltage drop High surge capability For use in low voltage ,high frequency inverters | SAMYANG 三阳电子 | |||
Schottky Barrier Rectifier Features ● Guardring for overvoltage protection ● Very small conduction losses ● Extremely fast switching ● High forward surge capability ● High frequency operation ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications For use in low voltage high frequency inverters, free | YANGJIE 扬杰电子 | |||
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 1.0Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Low power loss ,high efficiency • High current capability ,Low forward voltage drop • | JINGHENG 晶恒 | |||
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 1.0Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Low power loss ,high efficiency • High current capability ,Low forward voltage drop • | JINANJINGHENG 晶恒集团 | |||
Silicon Epitaxial Planar Diode for High Speed Switching Silicon Epitaxial Planar Diode for High Speed Switching Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 4.0 ns max) • High reliability with glass seal. | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon Epitaxial Planar Diode for High Speed Switching Silicon Epitaxial Planar Diode for High Speed Switching Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 4.0 ns max) • High reliability with glass seal. | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon Epitaxial Planar Diode for High Speed Switching Silicon Epitaxial Planar Diode for High Speed Switching Features • Low capacitance. (C = 3.5 pF max) • Short reverse recovery time. (trr = 8.0 ns max) • High reliability with glass seal. | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon Epitaxial Planar Diode for High Speed Switching Silicon Epitaxial Planar Diode for High Speed Switching Features • Low capacitance. (C = 3.5 pF max) • Short reverse recovery time. (trr = 8.0 ns max) • High reliability with glass seal. | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator Features • Low capacitance. (C=3.0pF max) • Short reverse recovery time. (trr =8.0ns max) • High reliability with glass seal. | HitachiHitachi Semiconductor 日立日立公司 | |||
HIGH SPEED SWITCHING DIODE PRV : 70 Volts Io : 150 mA FEATURES : * Silicon Epitaxial Planar Diode * High reliability * Low reverse current * Low forward voltage drop * High speed switching * Pb / RoHS Free | EIC | |||
High reliability with glass seal. Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 8.0ns max) • High reliability with glass seal. | LUGUANG 鲁光电子 | |||
HIGH SPEED SWITCHING DIODE PRV : 70 Volts Io : 150 mA FEATURES : * Silicon Epitaxial Planar Diode * High reliability * Low reverse current * Low forward voltage drop * High speed switching * Pb / RoHS Free MECHANICAL DATA : * Case : DO-35 Glass Case * Lead : Axial lead solderable per MIL | SYNSEMI | |||
SMALL SIGNAL SWITCHING DIODE REVERSE VOLTAGE : 60 V CURRENT: 0.15 A FEATURES Silicon epitaxial planar diode High speed switching diode 500 mW power dissipation Weight: 0.004 ounces, 0.13 grams MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode | KISEMICONDUCTOR | |||
SILICON EPTAXIAL PLANAR TYPE Silicon Eptaxial Planar Type Diode GENERAL PURPOSE DETECTOR AND RECTIFIER APPLICATIONS | TOSHIBA 东芝 | |||
SILICON PLANAR TYPE TRIGGER DIODE Silicon Planar Type Trigger Diode THYRISTOR, TRIAC TRIGGER APPLICATIONS. | TOSHIBA 东芝 | |||
VARIABLE CAPACITANCE DIODE Silicon Epitaxial Planar Type VARIABLE CAPACITANCE DIODE UHF, VHF AFC APPLICATIONS. | TOSHIBA 东芝 | |||
SILICON EPITAXIAL PLANAR TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATIONS. CORE DRIVE APPLICATIONS. | TOSHIBA 东芝 | |||
35V Detection switch tube 文件:309.16 Kbytes Page:2 Pages | ||||
SILICON EPITAXIAL PLANAR DIODE 文件:309.16 Kbytes Page:2 Pages | ||||
SILICON EPITAXIAL PLANAR DIODE 文件:307.58 Kbytes Page:2 Pages | ||||
35V Detection switch tube 文件:307.58 Kbytes Page:2 Pages | ||||
1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件:448.02 Kbytes Page:4 Pages | MCC | |||
SCHOTTKY BARRIER RECTIFIER 文件:58.1 Kbytes Page:2 Pages | JINANJINGHENG 晶恒集团 | |||
R-1 Plastic-Encapsulate Diodes | ETC 知名厂家 | ETC | ||
R-1 Plastic-Encapsulate Diodes 文件:1.41015 Mbytes Page:4 Pages | HDSEMI 海德半导体 | |||
Silicon Epitaxial Planar Diode for High Speed Switching | RENESAS 瑞萨 | |||
Silicon Epitaxial Planar Diode for High Speed Switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon Epitaxial Planar Diode for High Speed Switching 文件:238.91 Kbytes Page:5 Pages | RENESAS 瑞萨 | |||
Silicon Epitaxial Planar Diode for High Speed Switching 文件:238.91 Kbytes Page:5 Pages | RENESAS 瑞萨 |
1S20产品属性
- 类型
描述
- 型号
1S20
- 功能描述
肖特基二极管与整流器 Schottky Barr Rect 1A,20V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HITACHI |
24+ |
NA/ |
5750 |
原装现货,当天可交货,原型号开票 |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
7208 |
支持大陆交货,美金交易。原装现货库存。 |
|||
HITACHI/日立 |
25+ |
DO-35 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
HITACHI/日立 |
25+ |
DO35 |
32360 |
HITACHI/日立全新特价1S2076A即刻询购立享优惠#长期有货 |
|||
EPSON |
23+ |
NA |
4986 |
专做原装正品,假一罚百! |
|||
EIC |
15+ |
DO-214 |
4578 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FUJI |
23+ |
200A1000 |
900 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
1S20芯片相关品牌
1S20规格书下载地址
1S20参数引脚图相关
- 4591
- 4536
- 4313
- 4069
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- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2n3904
- 256p
- 2531
- 240m
- 2222a
- 20kv
- 20700
- 1S2711
- 1S2638
- 1S2462
- 1S2461
- 1S2460
- 1S2236
- 1S2186
- 1S2095A
- 1S2094
- 1S2093
- 1S2092
- 1S2076-E
- 1S2076A-E
- 1S2076A(TD-E)
- 1S2076A
- 1S2076(TD-E)
- 1S2076
- 1S2075K(TD-E)
- 1S2075K
- 1S2075(K)
- 1S2075
- 1S2074H
- 1S2074(H)
- 1S2074
- 1S20-560
- 1S20-550
- 1S20-510
- 1S2047H
- 1S20460B
- 1S200
- 1S20_17
- 1S20_11
- 1S20/510
- 1S2_09
- 1S2_04
- 1S2
- 1S1S-HOS-3FT
- 1S1-MDP1-R2/2M6GE
- 1S1-MDP1-R1/2-M6QE
- 1S1G_15
- 1S1G
- 1S1F
- 1S1944Z
- 1S1944
- 1S1943Z
- 1S1943
- 1S1942Z
- 1S1942
- 1S1941Z
- 1S1941
- 1S1888Z
- 1S1888A(Q)
- 1S1888A
- 1S1888(Q)
- 1S1888
- 1S1887Z
- 1S1887A
- 1S1887
- 1S1886Z
- 1S1886A
- 1S1886
1S20数据表相关新闻
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2019-2-28
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