位置：首页 > IC中文资料第6256页 > 1S2075
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1S2075 | Silicon Epitaxial Planar Diode for High Speed Switching Silicon Epitaxial Planar Diode for High Speed Switching Features • Low capacitance. (C = 3.5 pF max) • Short reverse recovery time. (trr = 8.0 ns max) • High reliability with glass seal. | HITACHIHitachi Semiconductor 日立日立公司 |   | |
1S2075 | 35V Detection switch tube 文件：309.16 Kbytes Page：2 Pages | | ||
1S2075 | SILICON EPITAXIAL PLANAR DIODE 文件：309.16 Kbytes Page：2 Pages | | ||
1S2075 | Silicon Epitaxial Planar Diode for High Speed Switching | RENESAS 瑞萨 | | |
1S2075 | Axial General rectifier diodes | SUNMATE 森美特 | | |
1S2075 | Silicon Epitaxial Planar Diode for High Speed Switching 文件：144.36 Kbytes Page：5 Pages | RENESAS 瑞萨 | | |
Silicon Epitaxial Planar Diode for High Speed Switching Silicon Epitaxial Planar Diode for High Speed Switching Features • Low capacitance. (C = 3.5 pF max) • Short reverse recovery time. (trr = 8.0 ns max) • High reliability with glass seal. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon Epitaxial Planar Diode for High Speed Switching 文件：144.36 Kbytes Page：5 Pages | RENESAS 瑞萨 | | ||
Diode Small Signal Switching 35V 0.1A 2-Pin DO-35 | ETC 知名厂家 | ETC | |
1S2075产品属性
- 类型
描述
- 型号
1S2075
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon Epitaxial Planar Diode for High Speed Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
25+ |
TP |
880000 |
明嘉莱只做原装正品现货 |
|||
Renesas(瑞萨) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
RENESAS |
24+ |
DO-35 |
16900 |
原装正品现货支持实单 |
|||
EIC |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
TOSHIBA |
24+ |
10000 |
|||||
HITACHI |
DO35 |
32 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
23+ |
DO-35 |
2500 |
全新原装正品现货,支持订货 |
|||
RENESAS |
2511 |
DO-35 |
2500 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS/瑞萨 |
23+ |
53232 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
1S2075规格书下载地址
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