Silicon Epitaxial Planar Diode for High Speed Switching

• Low capacitance. (C = 3.0 pF max)\n• Short reverse recovery time. (trr = 8.0 ns max)\n• High reliability with glass seal.;

35V Detection switch tube

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SILICON EPITAXIAL PLANAR DIODE

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Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator

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Silicon Epitaxial Planar Diode for High Speed Switching

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Small Signal

Diode Small Signal Switching 35V 0.15A 2-Pin DO-35

Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator

Features • Low capacitance. (C=3.0pF max) • Short reverse recovery time. (trr =8.0ns max) • High reliability with glass seal.

HIGH SPEED SWITCHING DIODE

PRV : 70 Volts Io : 150 mA FEATURES : * Silicon Epitaxial Planar Diode * High reliability * Low reverse current * Low forward voltage drop * High speed switching * Pb / RoHS Free

HIGH SPEED SWITCHING DIODE

PRV : 70 Volts Io : 150 mA FEATURES : * Silicon Epitaxial Planar Diode * High reliability * Low reverse current * Low forward voltage drop * High speed switching * Pb / RoHS Free MECHANICAL DATA : * Case : DO-35 Glass Case * Lead : Axial lead solderable per MIL

High reliability with glass seal.

Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 8.0ns max) • High reliability with glass seal.

SMALL SIGNAL SWITCHING DIODE

REVERSE VOLTAGE : 60 V CURRENT: 0.15 A FEATURES Silicon epitaxial planar diode High speed switching diode 500 mW power dissipation Weight: 0.004 ounces, 0.13 grams MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode

Silicon Epitaxial Planar Diode for High Speed Switching

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