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1N10价格
参考价格：￥3.4491
型号：1N10 品牌：Apem 备注：这里有1N10多少钱，2026年最近7天走势，今日出价，今日竞价，1N10批发/采购报价，1N10行情走势销售排行榜，1N10报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Optimized for Radio Frequency Response Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold | MICROSEMI 美高森美 |   | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
GOLD BONDED GERMANIUM DIODE [BKC International Electronics Inc.] GOLD BONDED DIODES | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
MEDIUM AND LOW VOLTAGE GERMANIUM DIODES MEDIUM AND LOW VOLTAGE GERMANIUM DIODES | AMMSEMI | | ||
GERMANIUM DIODES Gold Bonded Germanium Diodes in DO-7 Package | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
germanium signal diode germanium signal diode | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
JEDEC DO-7 PACKAGE JEDEC DO-7 PACKAGE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Optimized for Radio Frequency Response Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold | MICROSEMI 美高森美 | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
Si Rectifiers Description: Si Rectifiers, 2A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
Silicon Power Rectifier Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V ● Excellent reliability | MICROSEMI 美高森美 | | ||
GERMANIUM DOIDES GERMANIUM DIODES | AAC | | ||
GERMANIUM DOIDES GERMANIUM DIODES | AAC | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Germanium Diodes | MICROCHIP 微芯科技 | | ||
Diode 100V 16A 2-Pin DO-4 | ETC 知名厂家 | ETC | | |
Diode 400V 16A 2-Pin DO-4 | ETC 知名厂家 | ETC | | |
GERMANIUM DOIDES 文件：1.97664 Mbytes Page：2 Pages | AMMSEMI | | ||
GERMANIUM DIODES 文件：1.97664 Mbytes Page：2 Pages | AMMSEMI | | ||
GERMANIUM PNP TRANSISTORS 文件：2.44311 Mbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to– | MOTOROLA 摩托罗拉 | | ||
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to– | MOTOROLA 摩托罗拉 | | ||
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive | INTERSIL | | ||
1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a | INTERSIL | |
1N10产品属性
- 类型
描述
- 型号
1N10
- 制造商
APEM
- 功能描述
Switch Accessories Teardrop Button/Blk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MSC |
2023+ |
MODULE |
2586 |
主打螺丝模块系列 |
|||
日立/ST |
23+ |
DIPSMD |
26000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MICROSEMI |
23+ |
7600 |
专注配单,只做原装进口现货 |
||||
MOTOROLA |
23+ |
NA |
124 |
专做原装正品,假一罚百! |
|||
BKC |
25+ |
73 |
|||||
25+ |
原厂封装 |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
MICROSEMI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
1N10规格书下载地址
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正品
2019-3-1
DdatasheetPDF页码索引
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