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1N10价格
参考价格：￥3.4491
型号：1N10 品牌：Apem 备注：这里有1N10多少钱，2025年最近7天走势，今日出价，今日竞价，1N10批发/采购报价，1N10行情走势销售排行榜，1N10报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Optimized for Radio Frequency Response Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold | Microsemi 美高森美 |   | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
GOLD BONDED GERMANIUM DIODE [BKC International Electronics Inc.] GOLD BONDED DIODES | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
MEDIUM AND LOW VOLTAGE GERMANIUM DIODES MEDIUM AND LOW VOLTAGE GERMANIUM DIODES | AMMSEMI | | ||
GERMANIUM DIODES Gold Bonded Germanium Diodes in DO-7 Package | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
germanium signal diode germanium signal diode | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
JEDEC DO-7 PACKAGE JEDEC DO-7 PACKAGE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Optimized for Radio Frequency Response Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold | Microsemi 美高森美 | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
Si Rectifiers Description: Si Rectifiers, 2A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
Silicon Power Rectifier Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V ● Excellent reliability | Microsemi 美高森美 | | ||
GERMANIUM DOIDES GERMANIUM DIODES | AAC | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
GERMANIUM DOIDES GERMANIUM DIODES | AAC | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1N1081 [EDAL INDUSTRIES INC] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Germanium Diodes | Microchip 微芯科技 | | ||
Diode 100V 16A 2-Pin DO-4 | ETC 知名厂家 | ETC | | |
Diode 400V 16A 2-Pin DO-4 | ETC 知名厂家 | ETC | | |
GERMANIUM DIODES 文件：1.97664 Mbytes Page：2 Pages | AMMSEMI | | ||
GERMANIUM DOIDES 文件：1.97664 Mbytes Page：2 Pages | AMMSEMI | | ||
GERMANIUM PNP TRANSISTORS 文件：2.44311 Mbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 110mΩ ID 4.5A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 110mΩ ID 15A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 110mΩ ID 15A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
chip fuse 文件：214.22 Kbytes Page：2 Pages | KOA | | ||
chip fuse 文件：214.22 Kbytes Page：2 Pages | KOA | |
1N10产品属性
- 类型
描述
- 型号
1N10
- 制造商
APEM
- 功能描述
Switch Accessories Teardrop Button/Blk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BKC |
25+ |
73 |
|||||
MICROSEMI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
MOTOROLA |
23+ |
NA |
124 |
专做原装正品,假一罚百! |
|||
日立/ST |
23+ |
DIPSMD |
26000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MSC |
2023+ |
MODULE |
2586 |
主打螺丝模块系列 |
|||
ANY |
新 |
422 |
全新原装 货期两周 |
||||
25+ |
原厂封装 |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
MICROSEMI |
23+ |
7600 |
专注配单,只做原装进口现货 |
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1N10数据表相关新闻
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1EDI40I12AFXUMA1 栅极驱动IC
2023-3-11EDI40I12AFXUMA1 全新原装正品 现货
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1N4001，当天发货0755-82732291全新原装现货或门市自取.
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1N4007 ，全新原装当天发货或门市自取0755-82732291.
2019-9-21N4007RLG公司大量全新现货随时可以发货
正品
2019-3-1
DdatasheetPDF页码索引
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