位置：首页 > IC中文资料第6251页 > RFL1N10L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RFL1N10L | 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a | Intersil |   | |
RFL1N10L | 1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS | NJS | | |
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 110mΩ ID 4.5A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 110mΩ ID 15A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 110mΩ ID 15A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
chip fuse 文件：214.22 Kbytes Page：2 Pages | KOA | | ||
chip fuse 文件：214.22 Kbytes Page：2 Pages | KOA | |
RFL1N10L产品属性
- 类型
描述
- 型号
RFL1N10L
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRISCORPORATION |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
HARRIS |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
24+ |
5000 |
公司存货 |
|||||
HARRIS |
专业铁帽 |
CAN3 |
15000 |
原装铁帽专营,代理渠道量大可订货 |
|||
24+ |
CAN3 |
6430 |
原装现货/欢迎来电咨询 |
||||
HARRIS/哈里斯 |
23+ |
CAN3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
HARRIS(哈利斯) |
20+ |
TO-205AF(TO-39) |
3000 |
||||
HARRISCORPORATION |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
HAR |
23+ |
RFL1N12 |
13528 |
振宏微原装正品,假一罚百 |
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RFL1N10L规格书下载地址
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DdatasheetPDF页码索引
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