位置：首页 > IC中文资料第3540页 > RFL1N10
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RFL1N10 | 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 |   | |
RFL1N10 | N-Channel, Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
RFL1N10 | 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive | Intersil | | |
RFL1N10 | 1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS | NJS | | |
1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a | Intersil | | ||
1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS | NJS | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 110mΩ ID 4.5A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 110mΩ ID 15A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 110mΩ ID 15A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
chip fuse 文件：214.22 Kbytes Page：2 Pages | KOA | | ||
chip fuse 文件：214.22 Kbytes Page：2 Pages | KOA | |
RFL1N10产品属性
- 类型
描述
- 型号
RFL1N10
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HAR |
9401+ |
CAN3 |
2 |
原装现货支持BOM配单服务 |
|||
HARRIS |
2025+ |
TO-39 |
4035 |
全新原厂原装产品、公司现货销售 |
|||
HARRIS/哈里斯 |
23+ |
CAN3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
HARRISCORPORATION |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
24+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
HARRIS |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
24+ |
CAN3 |
6430 |
原装现货/欢迎来电咨询 |
||||
HAR |
23+ |
RFL1N10 |
13528 |
振宏微原装正品,假一罚百 |
|||
HARRISCORPORATION |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
HARRISCORPORATION |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
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RFL1N10规格书下载地址
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DdatasheetPDF页码索引
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