丝印代码：160V；Surface mount transient voltage suppressor power 400 watts

FEATURES For surface mounted applications in order to optimize board space. Low profile package Glass passivated junction Low inductance Plastic package has Underwriters Laboratory Flammability

丝印代码：160V；Surface mount transient voltage suppressor power 200 watts

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丝印代码：160V；Surface mount transient voltage suppressor power 200 watts

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In-System Programmable 3.3V Generic Digital CrosspointTM

In-System Programmable 3.3V Generic Digital CrosspointTM

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封装/外壳：径向，Can - 卡入式 包装：带盒（TB） 描述：CAP ALUM 1200UF 20% 160V SNAP 电容器 铝电解电容器

封装/外壳：径向，Can - 卡入式 包装：散装 描述：CAP ALUM 1800UF 20% 160V SNAP 电容器 铝电解电容器

牛角型电解电容

LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS

文件：56.51 Kbytes Page：2 Pages

LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS

文件：56.51 Kbytes Page：2 Pages

LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS

文件：56.51 Kbytes Page：2 Pages

LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS

文件：56.51 Kbytes Page：2 Pages

LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS

文件：56.51 Kbytes Page：2 Pages

LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS

文件：56.51 Kbytes Page：2 Pages

LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS

文件：56.51 Kbytes Page：2 Pages

牛角型电解电容

LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS

文件：56.51 Kbytes Page：2 Pages

LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS

文件：56.51 Kbytes Page：2 Pages

LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS

文件：56.51 Kbytes Page：2 Pages

LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS

文件：56.51 Kbytes Page：2 Pages

LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS

文件：56.51 Kbytes Page：2 Pages

LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS

文件：56.51 Kbytes Page：2 Pages

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

POWER TRANSISTORS(10A,320-380V,125W)