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13003T晶体管资料

  • 13003T别名:13003T三极管、13003T晶体管、13003T晶体三极管

  • 13003T生产厂家

  • 13003T制作材料

  • 13003T性质

  • 13003T封装形式:直插封装

  • 13003T极限工作电压:700V

  • 13003T最大电流允许值:1.5A

  • 13003T最大工作频率:<1MHZ或未知

  • 13003T引脚数:3

  • 13003T最大耗散功率:40W

  • 13003T放大倍数:β=8-40

  • 13003T图片代号:B-10

  • 13003Tvtest:700

  • 13003Thtest:999900

  • 13003Tatest:1.5

  • 13003Twtest:40

  • 13003T代换 13003T用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作
13003T

NPN Silicon Power Transistors

文件:318.89 Kbytes Page:4 Pages

SEMTECH_ELEC

先之科半导体

13003T

功率三极管

STMICROELECTRONICS

意法半导体

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

STMICROELECTRONICS

意法半导体

更新时间:2026-5-16 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
JSMC/吉林华微
2026+
TO-126
54648
百分百原装现货 实单必成
N/A
2450+
SOP-8
9850
只做原装正品现货或订货假一赔十!
N/A
24+
SOP-8
2104
国产
25+23+
TO251
73047
绝对原装正品现货,全新深圳原装进口现货
MOLEX/莫仕
2608+
/
343380
一级代理,原装现货
MOLEX/莫仕
24+
10253
原厂现货渠道
JSMC
19+
TO-126
20000
原装现货假一罚十
JSMC
24+
TO-126
63200
一级代理/放心采购
24+
TO220
5323
公司原厂原装现货假一罚十!特价出售!强势库存!
CJ/长电
24+
TO-251
50000
只做原装,欢迎询价,量大价优

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