SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003DE is suitable for electronic ballasts and the general power switch circuit, · High collector-base breakdown voltage \n· High reliability \n· Low reverse leakage current;

SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：164.92 Kbytes Page：4 Pages

SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：148.62 Kbytes Page：3 Pages

SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：164.92 Kbytes Page：4 Pages

SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：164.92 Kbytes Page：4 Pages

SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：164.92 Kbytes Page：4 Pages

SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：148.62 Kbytes Page：3 Pages

SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：148.62 Kbytes Page：3 Pages

SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：148.62 Kbytes Page：3 Pages

SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：164.92 Kbytes Page：4 Pages

SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：164.92 Kbytes Page：4 Pages

SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：164.92 Kbytes Page：4 Pages

SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：148.62 Kbytes Page：3 Pages

SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：148.62 Kbytes Page：3 Pages

SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：148.62 Kbytes Page：3 Pages

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt