TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING)

SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent Switching Times : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1A • High Collector Voltage : VCBO=700V.

NPN EPITAXIAL PLANAR TRANSISTOR

Description The HMJE13003T is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features •High Speed Switching •Low Saturation Voltage •High Reliability

NPN EPITAXIAL PLANAR TRANSISTOR

Description •High Voltage, High Speed Power Switch •Switch Regulators •PWM Inverters and Motor Controls •Solenoid and Relay Drivers •Deflection Circuits

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 1.25 W Tamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 700 V

三极管

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt