| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
13003BDG | NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION The UTC 13003BDG is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003BDG is suitable for electronic ballast power switch circuit and the compact · High collector-base breakdown voltage \n· Low reverse leakage current \n· High reliability; | UTC 友顺 |   | |
13003BDG | NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION 文件：172.45 Kbytes Page：4 Pages | UTC 友顺 | | |
NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION 文件：144.32 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION 文件：144.32 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION 文件：172.45 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION 文件：172.45 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION 文件：144.32 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION 文件：144.32 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION 文件：172.45 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION 文件：172.45 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION 文件：172.45 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION 文件：144.32 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION 文件：144.32 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION 文件：172.45 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION 文件：172.45 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION 文件：144.32 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION 文件：144.32 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION 文件：172.45 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION 文件：172.45 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION 文件：172.45 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION 文件：144.32 Kbytes Page：4 Pages | UTC 友顺 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | |
13003BDG产品属性
- 类型
描述
- BVceo (V)：
450
- BVcbo (V)：
800
- Ic (A)：
1.5
- hFE (min)：
20
- hFE (max)：
40
- Vce (Max)(V)：
0.8
- Vce (Sat)(V)：
0.18
- Package：
TO-251 / TO-126 / TO...
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Keystone |
25+ |
6000 |
全新原装鄙视假货15118075546 |
||||
MOLEX/莫仕 |
24+ |
8477 |
原厂现货渠道 |
||||
n/m |
25+23+ |
SSOP8 |
49372 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
INTEL/英特尔 |
23+ |
PGA |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
ST |
26+ |
TO-220 |
60000 |
只有原装 可配单 |
|||
原装A |
23+ |
SOP-8 |
5000 |
专注配单,只做原装进口现货 |
|||
ST |
25+ |
TO-220 |
20000 |
原装 |
|||
ST |
25+ |
TO-220 |
20000 |
原装，请咨询 |
|||
24+ |
34100 |
||||||
METHODE |
24+/25+ |
4800 |
原装正品现货库存价优 |
13003BDG规格书下载地址
13003BDG参数引脚图相关
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- 3477
- 31337
- 303c
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- 240m
- 2222a
- 20kv
- 20700
- 1n4148
- 18000
- 1470
- 1427
- 13828
- 13005D
- 13005BA
- 13005B
- 13005AD
- 13005A
- 130058
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- 1300-404-422W
- 1300-404-422
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- 13-004.7-173
- 13004
- 13003Z
- 1300-3XX-X
- 1300-3XX-3
- 1300-3XX-2
- 1300-3XX-1
- 13003T
- 13003SQ
- 130-03RT-808
- 13003H
- 13003EZ-E1
- 13003DW
- 13003DH
- 13003DF
- 13003DE
- 130-03CB-801
- 13003CB
- 13003BS
- 13003BR
- 130-03BB
- 13003B
- 13003AD
- 13003958
- 13003932
- 13003913
- 1300390530
- 1300390351
- 130039-0341
- 1300390341
- 1300390336
- 1300390328
- 1300390318
- 130039-0303
- 1300390300
- 130039-0299
- 1300390299
- 130039-0297
- 1300390297
- 130039-0290
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- 130039-0284
- 13003
- 13002U
- 13002T
- 13002S
- 13002G
- 13002AH
- 13002A
- 13002
- 13001SQ
- 13001CB
- 13001-A
- 130017
- 130-013
- 13001-2
- 1300114
- 13001-0
- 130-010
- 13001
13003BDG数据表相关新闻
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130092-0172
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类别 光电器件 LED 照明 - COB，引擎，模块，灯条 制造商 Inspired LED， LLC 系列 - 包装 带卷（TR） 零件状态 有源 类型 LED 引擎 颜色 红色，绿色，蓝色（RGB） CCT (K) - 波长 - 配置 线性灯条，弹性
2020-12-181318917-1/TE
1318917-1/TE
2020-4-141318305-2原装TE汽车连接器
只做原装，假一罚十，可开16%增值税票。TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO
2019-3-13
DdatasheetPDF页码索引
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