丝印代码：11N65M5；N-channel 650 V, 0.475 ??typ., 8.5 A MDmesh??M5 Power MOSFET in a PowerFLAT??5x5 package

Description This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high po

丝印代码：11N65FJHD2；11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

GENERAL DESCRIPTION SVS11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s Super Junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

丝印代码：11N65FJHD2；11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

GENERAL DESCRIPTION SVS11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s Super Junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

GENERAL DESCRIPTION SVS11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s Super Junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

11A, 600V N-CHANNEL POWER MOSFET

The UTC 11N65K-MT is an N-channel enhancement modepower MOSFET. It uses UTC advanced planar stripe, DMOStechnology to provide customers perfect switching performance,minimal on-state resistance. It also can withstand high energy pulsein the avalanche and commutation mode.The UTC 11N65K-MT is univers • RDS(ON)<1.00Ω @ VGS=10V\n• With 100% Avalanche Tested;

N-Channel 650 V (D-S) MOSFET

文件：1.033599 Mbytes Page：8 Pages

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丝印代码：PSM11N65CT；11A 650V Single N?륝hannel Power MOSFET

文件：763.56 Kbytes Page：10 Pages