位置：首页 > IC中文资料第9610页 > NCE11N65F
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCE11N65F | Super Junction MOSFET 文件：614.06 Kbytes Page：9 Pages | NCEPOWER 新洁能 |   | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 8A, RDS(ON) = 0.42W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 8A, RDS(ON) = 0.42W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOS 华瑞 | |
NCE11N65F产品属性
- 类型
描述
- 型号
NCE11N65F
- 制造商
NCEPOWER
- 制造商全称
NCEPOWER
- 功能描述
Super Junction MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NCE/新洁能 |
23+ |
TO-247 |
21568 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
NCE |
21+ |
DFN |
356 |
原装 |
|||
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
无锡新洁能 |
2447 |
DFN2x2-6L |
105000 |
4000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
NCE新洁能 |
25+ |
DFN2X2-6L |
100000 |
新结能全线供应,支持终端生产 |
|||
NCE |
2026+ |
- |
34900 |
华南总代 |
|||
新洁能 |
24+ |
NA |
58000 |
原装现货 |
|||
NCE/新洁能 |
25+ |
DFN2X2-6L |
60000 |
全新原装现货特价销售,欢迎来电查询 |
|||
PRODUCTION |
1905+ |
DFN2X2-6L |
30000 |
原装正品 |
|||
NK/南科功率 |
2025+ |
DFN2*2 |
986966 |
国产 |
NCE11N65F规格书下载地址
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NCE11N65F数据表相关新闻
DdatasheetPDF页码索引
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