型号 功能描述 生产厂家 企业 LOGO 操作
PSM11N65CT

11A 650V Single N?륝hannel Power MOSFET

文件:763.56 Kbytes Page:10 Pages

PFC

节能元件

PSM11N65CT

场效应电晶体

PFC

节能元件

场效应电晶体

PFC

节能元件

11A 650V Single N-Channel Power MOSFET

文件:1.09316 Mbytes Page:10 Pages

PFC

节能元件

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 8A, RDS(ON) = 0.42W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 8A, RDS(ON) = 0.42W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

CET-MOS

华瑞

更新时间:2025-12-30 16:27:00
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力勤/Chenmk
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85000
一级代理 原装正品假一罚十价格优势长期供货
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一级代理专营品牌!原装正品,优势现货,长期排单到货

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