丝印代码：10N80；800V N-Channel Planar MOSFET

Features RDSON=1.0Ω @Vgs=10V, Id=5A Low gate Charge(typical 45nC) Low Crss (typical 6.3pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A d

丝印代码：10N80；800V N-Channel Planar MOSFET

Description 800V N-Channel Planar MOSFET 10N80 is high voltage MOSFET family based on advanced planar stripe DMOS technology. This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device fami

丝印代码：10N80；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

丝印代码：10N80；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

丝印代码：10N80；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

丝印代码：10N80；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

800V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.1Ω@VGS = 10 V

10A, 800V N-CHANNEL POWER MOSFET

• RDS(ON) = 1.1Ω @VGS = 10 V \n• Ultra Low Gate Charge ( Typical 45 nC ) \n• Low Reverse Transfer Capacitance ( CRSS = Typical 15 pF ) \n• Fast Switching Capability \n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness;

N-Channel Power MOSFET

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10A, 800V N-CHANNEL POWER MOSFET

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isc N-Channel MOSFET Transistor

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丝印代码：10N80K5；N-channel 800 V, 0.470 ??typ., 9 A MDmesh??K5 Power MOSFET in a TO-220FP package

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

丝印代码：10N80K5；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 techno

丝印代码：10N80K5；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 techno

丝印代码：10N80K5；Automotive-grade N-channel 800 V, 0.60 Ω typ., 8 A MDmesh K5 Power MOSFET in an H²PAK-2 package

Features • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technolo

丝印代码：10N80AF；800V N-Channel Multi-EPI Super-Junction MOSFET

Features - - 850V@Tj=150℃ - - 10A,800V, RDS(on) =410mΩ@VGS = 10 V - - Low gate charge(typ. Qg =17.7nC) - - High ruggedness - - Ultra fast switching - - 100% avalanche tested - - Improved dv/dt capability

丝印代码：10N80AP；10A 800V N-channel enhanced field effect transistor

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丝印代码：10N80APS；10A 800V N-channel enhanced field effect transistor

文件：935.43 Kbytes Page：6 Pages

丝印代码：10N80AF；10A 800V N-channel enhanced field effect transistor

文件：935.43 Kbytes Page：6 Pages

10A, 800V N-CHANNEL POWER MOSFET

The UTC 10N80-CQ provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device issuitable for use as a load switch or in PWM applications. RDS(ON) < 1.4 Ω @ VGS=10V, ID=5.0A Low Reverse Transfer Capacitance Fast Switching Capability Avalanche Energy Specified Improved dv/dt Capability, High Ruggedness;

800V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.1Ω@VGS = 10 V

800V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.1Ω@VGS = 10 V

800V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.1Ω@VGS = 10 V

800V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.1Ω@VGS = 10 V

10A, 800V N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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N-Channel MOSFET Transistor

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10A 800V N-channel enhanced field effect transistor

文件：935.43 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：225.15 Kbytes Page：7 Pages

10A, 800V N-CHANNEL POWER MOSFET

文件：199.64 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：225.15 Kbytes Page：7 Pages

10A, 800V N-CHANNEL POWER MOSFET

文件：199.64 Kbytes Page：6 Pages

10A, 800V N-CHANNEL POWER MOSFET

文件：199.64 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：225.15 Kbytes Page：7 Pages

10A竊?00V N-CHANNEL MOSFET

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10A, 800V N-CHANNEL POWER MOSFET

文件：199.64 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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10A, 800V N-CHANNEL POWER MOSFET

文件：199.64 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

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10A, 800V N-CHANNEL POWER MOSFET

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800V N-Channel MOSFET

800V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

800V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and PFC Circuits..

Application Explanation

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