Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

● Industry’s lowest RDS(on) x area

● Industry’s best figure of merit (FoM)

● Ultra-low gate charge

● 100 avalanche tested

● Zener-protected

Applications

● Switching applications