800V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

800V N-Channel MOSFET

文件：799.99 Kbytes Page：9 Pages

800V N-Channel MOSFET

文件：806.4 Kbytes Page：8 Pages

800V N-Channel MOSFET

800V N-Channel MOSFET

文件：799.99 Kbytes Page：9 Pages

800V N-Channel MOSFET

文件：806.4 Kbytes Page：8 Pages

Power MOSFET, N-Channel, QFET®, 800 V, 10 A, 1.1 Ω, TO-3P

800V N-Channel MOSFET

文件：799.99 Kbytes Page：9 Pages

800V N-Channel MOSFET

文件：806.4 Kbytes Page：8 Pages

功率 MOSFET，N 沟道，QFET®，800 V，10 A，1.1 Ω，TO-3P

FQA10N80C_F109 N-Channel QFET짰 MOSFET 800 V, 10 A, 1.1 廓

文件：435.47 Kbytes Page：8 Pages

800V N-Channel Planar MOSFET

Features RDSON=1.0Ω @Vgs=10V, Id=5A Low gate Charge(typical 45nC) Low Crss (typical 6.3pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A d

800V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.1Ω@VGS = 10 V

10A, 800V N-CHANNEL POWER MOSFET

文件：199.64 Kbytes Page：6 Pages

N-Channel Power MOSFET

文件：352.08 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：296.15 Kbytes Page：2 Pages