10A 800V N-channel enhanced field effect transistor

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丝印代码：10N80AF；800V N-Channel Multi-EPI Super-Junction MOSFET

Features - - 850V@Tj=150℃ - - 10A,800V, RDS(on) =410mΩ@VGS = 10 V - - Low gate charge(typ. Qg =17.7nC) - - High ruggedness - - Ultra fast switching - - 100% avalanche tested - - Improved dv/dt capability

丝印代码：10N80AP；10A 800V N-channel enhanced field effect transistor

文件：935.43 Kbytes Page：6 Pages

丝印代码：10N80APS；10A 800V N-channel enhanced field effect transistor

文件：935.43 Kbytes Page：6 Pages

丝印代码：10N80AF；10A 800V N-channel enhanced field effect transistor

文件：935.43 Kbytes Page：6 Pages

800V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

800V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and PFC Circuits..

Application Explanation

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