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型号 功能描述 生产厂家 企业 LOGO 操作
04N6

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES 600V , 2.5A , RDS(ON)=2.5Ω@VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole

CET

华瑞

丝印代码:04N60;N-Ch Enhancement Mode Power MOSFET

文件:244.02 Kbytes Page:3 Pages

SECOS

喜可士

N-Channel 650 V (D-S) MOSFET

文件:1.94923 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件:1.94929 Mbytes Page:9 Pages

VBSEMI

微碧半导体

丝印代码:D2PAK;N-Channel 6 50V (D-S) Power MOSFET

文件:2.12878 Mbytes Page:10 Pages

VBSEMI

微碧半导体

Cool MOS™ Power Transistor

INFINEON

英飞凌

N-Channel 6 50V (D-S) Power MOSFET

文件:2.12878 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件:1.94936 Mbytes Page:9 Pages

VBSEMI

微碧半导体

丝印代码:D2PAK;N-Channel 6 50V (D-S) Power MOSFET

文件:2.1288 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 6 50V (D-S) Power MOSFET

文件:2.1288 Mbytes Page:10 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:1.94027 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:1.94029 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE

文件:62.82 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE

文件:64.16 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

丝印代码:D2PAK;N-Channel 6 50V (D-S) Power MOSFET

文件:2.1288 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件:1.97664 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 3.4A, RDS(ON) = 2.4W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

CET-MOS

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES 600V , 2.5A , RDS(ON)=2.5Ω@VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件:827.09 Kbytes Page:4 Pages

CET

华瑞

更新时间:2026-3-12 19:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
0725+
TO-252
94
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
25+
TO-251A
5999
全新原装正品支持含税
INF
11+
TO252
1000
原装现货价格有优势量大可以发货
INFINEON
26+
To-252
86720
全新原装正品价格最实惠 假一赔百
INFINEON/英飞凌
2450+
TO-220F
8540
只做原装正品假一赔十为客户做到零风险!!
INFINEON
24+
SMD
20000
一级代理原装现货假一罚十
INFINEON
TO263
15620
一级代理 原装正品假一罚十价格优势长期供货
INF
24+
TO252
500
INFINEON/英飞凌
2021+
TO-251A
15580
原装进口,信心保证
INFI
25+
145
公司优势库存 热卖中!!!

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