Cool MOS™ Power Transistor

Feature\n• New revolutionary high voltage technology\n• Ultra low gate charge\n• Periodic avalanche rated\n• Extreme dv/dt rated\n• Ultra low effective capacitances\n• Improved transconductance\n• Pb-free lead plating; RoHS compliant\n• Qualified according to JEDEC0) for target applications

丝印代码：D2PAK；N-Channel 650 V (D-S) MOSFET

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N-Channel 650 V (D-S) MOSFET

文件：1.70191 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.70195 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.70167 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.70169 Mbytes Page：8 Pages

N CHANNEL ENHANCEMENT MODE

文件：701.78 Kbytes Page：6 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.69052 Mbytes Page：8 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.68505 Mbytes Page：8 Pages

Power MOSFET

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丝印代码：D2PAK；N-Channel 650 V (D-S) MOSFET

文件：1.71684 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.71684 Mbytes Page：8 Pages

Power MOSFET

文件：1.67706 Mbytes Page：8 Pages

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 600V , 1.9A , RDS(ON)=5Ω @VGS=10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-251 & TO-252 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 600V , 1.9A , RDS(ON)=5Ω @VGS=10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-251 & TO-252 package.