| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEU02N6 | N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ● 600V , 1.9A , RDS(ON)=5Ω @VGS=10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-251 & TO-252 package. | CET 华瑞 |   | |
CEU02N6 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | CET 华瑞 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.2A, RDS(ON) = 10.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 1.8A, RDS(ON) = 5.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1.3A, RDS(ON) = 8.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 1.3A, RDS(ON) = 8 Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 600V, 2A, RDS(ON) = 5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2A, RDS(ON) = 5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N Channel Product | CET 华瑞 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.54693 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.52203 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.9045 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. | CET 华瑞 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ● 600V , 1.9A , RDS(ON)=5Ω @VGS=10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. | CET 华瑞 | | ||
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. | CET 华瑞 | |
CEU02N6产品属性
- 类型
描述
- BVDSS(V)：
650
- Rds(on)mΩ@10V：
10500
- ID(A)：
1.2
- Qg(nC)@10V(typ)：
6.9
- RθJC(℃/W)：
3.5
- Pd(W)：
35.7
- Configuration：
Single
- Polarity：
N
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
|||
CET |
25+ |
TO252 |
15000 |
全新原装现货,价格优势 |
|||
CET |
12+ |
TO-252 |
4864 |
全新 发货1-2天 |
|||
CET |
25+ |
TO-252 |
90000 |
进口原装现货假一罚十价格合理 |
|||
SR |
23+ |
TO252-2 |
5000 |
原装正品,假一罚十 |
|||
CET |
23+ |
TO-252 |
7300 |
专注配单,只做原装进口现货 |
|||
CET/華瑞 |
2022+ |
TO-252 |
32500 |
原厂代理 终端免费提供样品 |
|||
CET/華瑞 |
25+ |
TO-252 |
90000 |
全新原装现货 |
|||
CET/華瑞 |
2511 |
TO-252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
CET |
TO-252 |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
CEU02N6规格书下载地址
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DdatasheetPDF页码索引
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