N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 600V , 1.9A , RDS(ON)=5Ω @VGS=10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 1.2A, RDS(ON) = 10.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 1.8A, RDS(ON) = 5.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 1.3A, RDS(ON) = 8 Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 1.3A, RDS(ON) = 8.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 2A, RDS(ON) = 5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 2A, RDS(ON) = 5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel MOSFET uses advanced trench technology

文件：1.54693 Mbytes Page：5 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.52203 Mbytes Page：5 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.9045 Mbytes Page：5 Pages

Single-Ended Cordsets

Basic features Approval/Conformity CE EAC WEEE

Inductive Sensors

BES M08EH1-PSC20B-S04G-S01 Basic features Additional features Housing resistant to weld spatter Approval/Conformity CE UKCA cULus WEEE Basic standard IEC 60947-5-2

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

文件：132.65 Kbytes Page：4 Pages