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型号	功能描述	生产厂家企业	LOGO
CEP02N6	N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.	CET 华瑞	CET
CEP02N6	N-Channel Enhancement Mode Field Effect Transistor 文件：132.65 Kbytes Page：4 Pages	CET 华瑞	CET
CEP02N6	N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	CET 华瑞	CET
CEP02N65A	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.	CET 华瑞	CET
CEP02N65A	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.	CET-MOS 华瑞	CET-MOS
CEP02N65D	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.	CET-MOS 华瑞	CET-MOS
CEP02N65G	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.	CET 华瑞	CET
CEP02N65G	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.	CET-MOS 华瑞	CET-MOS
CEP02N6A	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.	CET-MOS 华瑞	CET-MOS
CEP02N6A	N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.	CET 华瑞	CET
CEP02N6G	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.	CET 华瑞	CET
CEP02N6G	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.	CET-MOS 华瑞	CET-MOS
CEP02N6_02	N-Channel Enhancement Mode Field Effect Transistor 文件：132.65 Kbytes Page：4 Pages	CET 华瑞	CET
CEP02N65G	N Channel MOSFET	CET 华瑞	CET
CEP02N6A	N Channel MOSFET	CET 华瑞	CET
CEB02N6	N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.	CET 华瑞	CET
CED02N6	N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ● 600V , 1.9A , RDS(ON)=5Ω @VGS=10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-251 & TO-252 package.	CET 华瑞	CET
CEF02N6	N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.	CET 华瑞	CET
CEU02N6	N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ● 600V , 1.9A , RDS(ON)=5Ω @VGS=10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-251 & TO-252 package.	CET 华瑞	CET

CEP02N6产品属性

类型
描述
BVDSS(V)：
650
Rds(on)mΩ@10V：
10500
ID(A)：
1.3
Qg(nC)@10V(typ)：
6.9
RθJC(℃/W)：
3
Pd(W)：
41
Configuration：
Single
Polarity：
N

CEP02N6供应商更多...

更新时间：2026-5-18 16:33:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	CEP02N6A	CET	23+	TO220/3	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市一线半导体有限公司	CEP02N6	CET	24+	TO2203	6734		询价
深圳市中联芯电子有限公司	CEP02N6G	VBsemi	25+	TO220	11000	原装正品有挂有货假一赔十	询价
上海金庆电子技术有限公司	CEP02N6	CET	05+	TO-220	8048	全新发货1-2天	询价
深圳市金华微盛电子有限公司	CEP02N6A	CET	19+	TO-220	30000		询价
深圳市宏世佳电子科技有限公司	CEP02N6	CET	2025+	TO2203	3550	全新原厂原装产品、公司现货销售	询价
贸泽芯城（深圳）电子科技有限公司	CEP02N6A	CET/華瑞	23+	TO-220	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
齐创科技(上海,北京,青岛)有限公司	CEP02N6G	SR	23+	TO-220	5000	原装正品,假一罚十	询价
深圳市宏捷佳电子科技有限公司	CEP02N6A	CET	2023+	TO-220	50000	原装现货	询价
深圳市安富世纪电子有限公司	CEP02N6-1	CET	23+	原厂正规渠道	5000	专注配单,只做原装进口现货	询价

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DdatasheetPDF页码索引

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找IC，尽在114IC

CEP02N6产品属性

CEP02N6供应商更多...

CEP02N6芯片相关品牌

CEP02N6规格书下载地址

CEP02N6参数引脚图相关

CEP02N6数据表相关新闻

CERN科学家设计出能在设施之间运输反物质的装置

CEM-1212C

CES-434313-28PM-67

CEM-1205C

CEM9435

CeraCharge电池Z62000Z2910Z01Z05

DdatasheetPDF页码索引