位置：首页 > IC中文资料第7077页 > CEP02N6
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEP02N6 | N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. | CET 华瑞 |   | |
CEP02N6 | N-Channel Enhancement Mode Field Effect Transistor 文件：132.65 Kbytes Page：4 Pages | CET 华瑞 | | |
CEP02N6 | N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | CET 华瑞 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：132.65 Kbytes Page：4 Pages | CET 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
Single-Ended Cordsets Basic features Approval/Conformity CE EAC WEEE | Balluff 巴鲁夫 | | ||
Inductive Sensors BES M08EH1-PSC20B-S04G-S01 Basic features Additional features Housing resistant to weld spatter Approval/Conformity CE UKCA cULus WEEE Basic standard IEC 60947-5-2 | Balluff 巴鲁夫 | | ||
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：132.65 Kbytes Page：4 Pages | CET 华瑞 | |
CEP02N6产品属性
- 类型
描述
- 型号
CEP02N6
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
24+ |
TO220 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
CET/華瑞 |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
VBSEMI/台湾微碧 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
|||
CET |
23+ |
TO220/3 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
24+ |
TO2203 |
6734 |
||||
CET/華瑞 |
25+ |
TO-220 |
156585 |
明嘉莱只做原装正品现货 |
|||
CET |
19+ |
TO-220 |
30000 |
||||
CET |
23+24 |
TO-220 |
59630 |
主营原装MOS,二三级管,肖特基,功率场效应管 |
|||
CET |
25+ |
TO-220 |
30 |
原装正品,假一罚十! |
|||
TI |
24+ |
VQFN36 |
6618 |
公司现货库存,支持实单 |
CEP02N6规格书下载地址
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