位置：首页 > IC中文资料第10414页 > CED02N6
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CED02N6 | N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●600V,1.9A,RDS(ON)=5Ω@VGS=10V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 |  |   |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,1.2A,RDS(ON)=10.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,1.3A,RDS(ON)=8Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,2A,RDS(ON)=5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,2A,RDS(ON)=5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
Single-EndedCordsets Basicfeatures Approval/Conformity CE EAC WEEE | BalluffBalluff Korea Ltd. 巴鲁夫巴鲁夫集团 |  | | |
InductiveSensors BESM08EH1-PSC20B-S04G-S01 Basicfeatures AdditionalfeaturesHousingresistanttoweldspatter Approval/ConformityCE UKCA cULus WEEE BasicstandardIEC60947-5-2 | BalluffBalluff Korea Ltd. 巴鲁夫巴鲁夫集团 | | | |
N-CHANNELLOGICLEVELENHANCEMENTMODEFIELDEFFECTTRANSISTOR FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor 文件：132.65 Kbytes Page：4 Pages | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | |
CED02N6产品属性
- 类型
描述
- 型号
CED02N6
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP/恩智浦 |
24+ |
tssop |
18420 |
公司现货库存,支持实单 |
|||
CET |
24+ |
TO-251 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
CET/華瑞 |
22+ |
T0-251 |
100000 |
代理渠道/只做原装/可含税 |
|||
VBsemi/台湾微碧 |
21+ |
TO-251 |
5011 |
原装现货假一赔十 |
|||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
CET |
23+ |
TO251 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
24+ |
TO251 |
278 |
||||
CET |
2010 |
TO251 |
50000 |
只做全新原装诚信经营现货长期供应 |
|||
CET |
25+ |
TO-251 |
5992 |
原装正品,假一罚十! |
|||
CET/華瑞 |
24+ |
NA/ |
9242 |
原装现货,当天可交货,原型号开票 |
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CED02N6规格书下载地址
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深圳市大唐盛世半导体有限公司手机：17727572380。电话：0755-83226739QQ:626839837。微信号：15096137729
2019-11-25
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