丝印代码：0010；Unidirectional ESD protection diode

1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solde

丝印代码：0010；Unidirectional ESD protection diode

1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solde

丝印代码：0010；20 V, 0.5 A low VF MEGA Schottky barrier rectifier

1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD882D (DFN1006D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side p

丝印代码：0010；40 V, 0.5 A low VF MEGA Schottky barrier rectifier

1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side p

丝印代码：001001；45 V, 100 mA NPN general-purpose transistors

Features and benefits  General-purpose transistors  Three current gain selections  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of solder joint  AEC-Q101 qualified

丝印代码：001011；45 V, 100 mA NPN general-purpose transistors

Features and benefits  General-purpose transistors  Three current gain selections  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of solder joint  AEC-Q101 qualified

丝印代码：001010；30 V, 1 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4130QA. 2. Features and benefits • Very low collector-

丝印代码：00100010；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

丝印代码：00100101；PNP resistor-equipped transistor; R1 = 22 k廓, R2 = 22 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

丝印代码：00100111；PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = 4.7 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

丝印代码：00101000；PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = open

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143TMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

丝印代码：00101001；PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = 10 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143XMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick

丝印代码：00101010；PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

Features and benefits  100 mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101 qualified  Leadless ultra small SMD plastic package  Low package height of 0.37 mm

丝印代码：00101011；PNP resistor-equipped transistor; R1 = 47 k廓, R2 = 47 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

丝印代码：00101110；PNP resistor-equipped transistor; R1 = 47 k廓, R2 = 22 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144WMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

丝印代码：00101000；20 V, 0.5 A low VF Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD882D (DFN1006D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • Average fo

丝印代码：001001；45 V, 100 mA NPN general-purpose transistors

文件：1.28155 Mbytes Page：15 Pages

丝印代码：001011；45 V, 100 mA NPN general-purpose transistors

文件：1.28155 Mbytes Page：15 Pages

丝印代码：00100000；PNP resistor-equipped transistor; R1 = 100 k廓, R2 = 100 k廓

文件：960.46 Kbytes Page：12 Pages

丝印代码：00100001；PNP resistor-equipped transistor; R1 = 100 k廓, R2 = open

文件：616.56 Kbytes Page：12 Pages

丝印代码：00100011；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = open

文件：729.91 Kbytes Page：12 Pages

丝印代码：00100100；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 10 k廓

文件：628.32 Kbytes Page：12 Pages

丝印代码：00100110；PNP resistor-equipped transistor; R1 = 22 k廓, R2 = open

文件：724.25 Kbytes Page：12 Pages

丝印代码：00101100；PNP resistor-equipped transistor; R1 = 47 k廓, R2 = open

文件：724.27 Kbytes Page：12 Pages

丝印代码：00101101；PNP resistor-equipped transistor; R1 = 47 k廓, R2 = 10 k廓

文件：627.58 Kbytes Page：12 Pages

丝印代码：00101111；NPN resistor-equipped transistor; R1 = 10 k廓, R2 = open

文件：617.06 Kbytes Page：12 Pages

OLFEX CLASSIC 100 300/500V

Application ‘OLFLEX® CLASSIC 100 300/500V cables are colour caded control ables for occasional flexible use and fixed nstalaton for mecium mechanical use. They are sitable for use in ry, damp and wet areas and are space-saving due to smaler cable diameters. f using outdoors, abserve the indic

Time and light control Staircase time switches

Description - Staircase time switch, electronical - Zero-cross switching for relay-saving switching and high lamp loads - Multi-functional device with 10 available functions, set at the front of the device - Additional multi-voltage input electrically isolated for AC/DC 8...240 V, e.g. für i

OLFLEX® CLASSIC 100 450/750V

Application ‘OLFLEX® CLASSIC 100 450/7501 cables are connecting- and control cables for occasionalflexible use and fixed instlltion for medium mechanical use. They are alo suitable fo use indry, damp or wet areas. I using outdoors, observe the indicated temperature range and use with UV prote

High-Sensitivity Optical Sensors

FEATURES & BENEFITS • Si, Ge photodiodes • Spectral range: 250 nm to 1800 nm • Fiber-optic connector (optional, see datasheet accessories page) • 1000:1 attenuator for measurement to 5 W (optional, see datasheet accessories page) APPLICATIONS • Scientific • Manufacturing • Quality Contr

Planned for Obsolescence

Description: 5.08mm (.200) Pitch SPOX™ Header, Vertical, with Void, 3 Circuits Application Power, Wire-to-Board

Wiha Square Handle, The Classic Screwdriver for Multiple Applications

文件：513.6 Kbytes Page：2 Pages

包装：散装 描述：ADJUSTABLE WIRE STOP (PTS-10) 工具 剥线钳和配件

5.08mm (.200) Pitch KK짰 Crimp Terminal Housing, 2 Circuits

文件：248.48 Kbytes Page：4 Pages

5.08mm (.200) Pitch KK짰 Crimp Terminal Housing, 3 Circuits

文件：152.64 Kbytes Page：3 Pages

5.08mm (.200) Pitch KK짰 Crimp Terminal Housing, 4 Circuits

文件：152.64 Kbytes Page：3 Pages

5.08mm (.200) Pitch KK짰 Crimp Terminal Housing, 5 Circuits

文件：152.63 Kbytes Page：3 Pages

压线端子胶壳

5.08mm (.200) Pitch KK짰 Crimp Terminal Housing, 6 Circuits

文件：152.64 Kbytes Page：3 Pages

5.08mm (.200) Pitch KK짰 Crimp Terminal Housing, 7 Circuits

文件：152.64 Kbytes Page：3 Pages

5.08mm (.200) Pitch KK짰 Crimp Terminal Housing, 8 Circuits

文件：152.64 Kbytes Page：3 Pages

5.08mm (.200) Pitch KK짰 Crimp Terminal Housing, 9 Circuits

文件：152.64 Kbytes Page：3 Pages

5.08mm (.200) Pitch KK짰 Crimp Terminal Housing, 10 Circuits

文件：152.64 Kbytes Page：3 Pages

5.08mm (.200) Pitch KK짰 Crimp Terminal Housing, 11 Circuits

文件：152.55 Kbytes Page：3 Pages

5.08mm (.200) Pitch KK짰 Crimp Terminal Housing, 12 Circuits

文件：152.64 Kbytes Page：3 Pages

2.54mm (.100) Pitch KK짰 Crimp Terminal Housing, High Pressure, 1 Circuits

文件：219.74 Kbytes Page：3 Pages

2.54mm (.100) Pitch KK짰 Crimp Terminal Housing, High Pressure, 1 Circuits

文件：219.74 Kbytes Page：3 Pages

2.54mm (.100) Pitch KK짰 Crimp Terminal Housing, High Pressure, 1 Circuits

文件：219.74 Kbytes Page：3 Pages

2.54mm (.100) Pitch KK짰 Crimp Terminal Housing, High Pressure, 1 Circuits

文件：219.74 Kbytes Page：3 Pages

2.54mm (.100) Pitch KK짰 Crimp Terminal Housing, High Pressure, 1 Circuits

文件：219.74 Kbytes Page：3 Pages

2.54mm (.100) Pitch KK짰 Crimp Terminal Housing, High Pressure, 1 Circuits

文件：219.74 Kbytes Page：3 Pages

2.54mm (.100) Pitch KK짰 Crimp Terminal Housing, High Pressure, 1 Circuits

文件：219.74 Kbytes Page：3 Pages

2.54mm (.100) Pitch KK짰 Crimp Terminal Housing, High Pressure, 1 Circuits

文件：219.74 Kbytes Page：3 Pages

2.54mm (.100) Pitch KK짰 Crimp Terminal Housing, High Pressure, 1 Circuits

文件：219.74 Kbytes Page：3 Pages

2.54mm (.100) Pitch KK짰 Crimp Terminal Housing, High Pressure, 1 Circuits

文件：219.74 Kbytes Page：3 Pages

2.54mm (.100) Pitch KK짰 Crimp Terminal Housing, High Pressure, 1 Circuits

文件：219.74 Kbytes Page：3 Pages

2.54mm (.100) Pitch KK짰 Crimp Terminal Housing, High Pressure, 1 Circuits

文件：219.74 Kbytes Page：3 Pages

2.54mm (.100) Pitch KK짰 Crimp Terminal Housing, High Pressure, 1 Circuits

文件：219.74 Kbytes Page：3 Pages

2.54mm (.100) Pitch KK짰 Crimp Terminal Housing, High Pressure, 1 Circuits

文件：219.74 Kbytes Page：3 Pages

2.54mm (.100) Pitch KK짰 Crimp Terminal Housing, High Pressure, 1 Circuits

文件：219.74 Kbytes Page：3 Pages