PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

封装/外壳：3-XFDFN 包装：卷带（TR） 描述：TRANS PREBIAS PNP 50V DFN1006B-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.010 Wall, Nom. MPPE 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Components Cabled

Customer SpecificationS

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.010 Wall, Nom. MPPE 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Components Cabled

M.2 Socket, H2.1 A Key 0.5 Pitch G/F, Black, Reel

Performance and Descriptions: The product is designed to meet the electrical, mechanical and environmental performance requirements specification. Unless otherwise specified, all tests are performed at ambient environmental conditions.

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