30 V, 1 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4130QA. 2. Features and benefits • Very low collector-

30 V, 1 A PNP low VCEsat (BISS) transistor

30 V, 1 A PNP low VCEsat (BISS) transistor

30 V, 1 A PNP low VCEsat (BISS) transistor

封装/外壳：3-XDFN 裸露焊盘 包装：散装 描述：TRANS PNP 30V 1A DFN1010D-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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文件：655.57 Kbytes Page：7 Pages

IEC Appliance Inlet C20 with Filter, ECO design, front or rear side Mounting

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IEC Appliance Inlet C20 with Filter, ECO design, front or rear side Mounting

文件：618.17 Kbytes Page：7 Pages