丝印代码：001010；30 V, 1 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4130QA. 2. Features and benefits • Very low collector-

30 V, 1 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n NPN complement: PBSS4130QA. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• High energy efficiency due to less heat generation\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Solderable side pads\n• AEC-Q101 qual;

30 V, 1 A PNP low VCEsat (BISS) transistor

30 V, 1 A PNP low VCEsat (BISS) transistor

封装/外壳：3-XDFN 裸露焊盘 包装：散装 描述：TRANS PNP 30V 1A DFN1010D-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

3V/5V, 13-Bit, Serial Voltage-Output DACs with Internal Reference

General Description The MAX5130/MAX5131 are low-power, 13-bit, voltage output digital-to-analog converters (DACs) with an internal precision bandgap reference and output amplifier. The MAX5130 operates on a single +5V supply with an internal reference of +2.5V, and is capable of a +4.0955V full-

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini power type package (2-pin) • Allowing automatic mounting with the emboss taping • Sharp rising performance

POWER ZENERS

DESCRIPTION Fused-in-glass, metallurgically-bonded 5 watt zeners. FEATURES • 2 Times Greater Surge Rating than Conventional 10 Watt Zeners • Small Physical Size

CCD AREA IMAGE SENSOR

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TRIPLE SYNCHRONOUS BUCK CONTROLLER WITH NMOS LDO CONTROLLER

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