位置：首页 > IC中文资料第3752页 > IXFN150N10
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFN150N10 | HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicon | IXYS IXYS Integrated Circuits Division |  |   |
IXFN150N10 | HiPerFETPowerMOSFET HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicon | IXYS IXYS Integrated Circuits Division | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=57A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=57A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelPowerTrench짰MOSFET100V,57A,15m廓 文件：526.37 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
N-ChannelPowerTrench짰MOSFET100V,57A,16m廓 文件：563.18 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
iscN-ChannelMOSFETTransistor 文件：327.94 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
IXFN150N10产品属性
- 类型
描述
- 型号
IXFN150N10
- 功能描述
MOSFET 150 Amps 100V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
2018+ |
module |
6000 |
全新原装正品现货,假一赔佰 |
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IXYS |
专业模块 |
MODULE |
8513 |
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|||
IXYS/艾赛斯 |
24+ |
MODULE |
990000 |
明嘉莱只做原装正品现货 |
|||
IXYS |
22+ |
模块 |
200 |
专营模块 |
|||
IXYS |
23+ |
模块 |
18000 |
||||
IXYS |
23+ |
MOSFETN-CH100V150ASOT-22 |
1690 |
专业代理销售半导体模块,能提供更多数量 |
|||
IXYS |
22+ |
SOT227 |
8000 |
原装正品支持实单 |
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IXYS |
23+ |
模块 |
3562 |
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IXYS |
23+ |
模块 |
320 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
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IXYS |
18+ |
2173 |
公司大量全新正品 随时可以发货 |
IXFN150N10芯片相关品牌
IXFN150N10规格书下载地址
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IXFN150N10数据表相关新闻
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2019-3-14
DdatasheetPDF页码索引
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