位置:首页 > IC中文资料 > ZXTP2012Z

ZXTP2012Z价格

参考价格:¥1.8172

型号:ZXTP2012ZTA 品牌:Diodes 备注:这里有ZXTP2012Z多少钱,2026年最近7天走势,今日出价,今日竞价,ZXTP2012Z批发/采购报价,ZXTP2012Z行情走势销售排行榜,ZXTP2012Z报价。
型号 功能描述 生产厂家 企业 LOGO 操作
ZXTP2012Z

60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES • Extremely low equivalent on-resistance; RSAT = 32mV at 5A • 4

ZETEX

ZXTP2012Z

60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

Features • BVCEO > -60V • IC = -4.3A High Continuous Current • RSAT = 32mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage VCE(SAT)

DIODES

美台半导体

ZXTP2012Z

PNP, 60V, 4.3A, SOT89

Packaged in the SOT89 outline this new low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions.

DIODES

美台半导体

PNP, 60V, 4.3A, SOT89

Packaged in the SOT89 outline this new low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions.

DIODES

美台半导体

60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES • Extremely low equivalent on-resistance; RSAT = 32mV at 5A • 4

ZETEX

60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

Features • BVCEO > -60V • IC = -4.3A High Continuous Current • RSAT = 32mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage VCE(SAT)

DIODES

美台半导体

60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

文件:243.51 Kbytes Page:7 Pages

DIODES

美台半导体

包装:卷带(TR) 描述:TRANS PNP 60V 4.3A SOT89 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

DIODES

美台半导体

封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 60V 4.3A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

DIODES

美台半导体

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL

STMICROELECTRONICS

意法半导体

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim

POLYFET

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

NTE

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TECCOR

SCR FOR OVERVOLTAGE PROTECTION

DESCRIPTION The TYP 212 ---> 1012 Family uses high perform ance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. FEATURES .HIGH SURGE CURRENT CAPABILITY .HIGH dI/dt RATING .HIGH STABILIT

STMICROELECTRONICS

意法半导体

ZXTP2012Z产品属性

  • 类型

    描述

  • Compliance(Only Automotive supports PPAP):

    Standard

  • Polarity:

    PNP

  • IC (A):

    4.3

  • ICM (A):

    15

  • PD (W):

    2.1

  • hFE (Min):

    100

  • hFE (@ IC) (A):

    0.01

  • hFE(Min 2):

    45

  • hFE (@ IC2) (A):

    5

  • VCE(sat) Max (mV):

    20

  • VCE(SAT) (@ IC/IB) (A/mA):

    0.1/10

  • VCE(sat) (Max.2) (mV):

    110

  • VCE(sat) (@ IC/IB2) (A/mA):

    2/200

  • fT (MHz):

    120

  • RCE(sat) (mΩ):

    32

  • Packages:

    SOT89

更新时间:2026-8-1 13:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES(美台)
24+
N/A
12980
原装正品现货支持实单
DIODES/美台
23+
SOT89
1000
专业供应MOS/LDO/晶体管/有大量价格低
DIODES
16+
SOP
30000
原装正品供应B
DIODES/美台
2019+
SOT89
78550
原厂渠道 可含税出货
DIODES
24+
SOT-89
175000
一级代理分销/现货/可长期供应
DIODES美台
26+
SOT89
333300
DIODES/美台
1938+
NA
383
DIODES(美台)
SOT-89-3
4251
全新原装正品现货可开票
DIODES/美台
24+
N/A
500000
美台原厂超低价支持
DIODES
2430+
SOT89
8540
只做原装正品假一赔十为客户做到零风险!!

ZXTP2012Z数据表相关新闻