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NTE2012价格
参考价格：￥28.3269
型号：NTE2012 品牌：NTE Electronics 备注：这里有NTE2012多少钱，2026年最近7天走势，今日出价，今日竞价，NTE2012批发/采购报价，NTE2012行情走势销售排行榜，NTE2012报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NTE2012 | Integrated Circuit 7-Channel Darlington Array/Driver Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie | NTE |   | |
NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL | STMICROELECTRONICS 意法半导体 | | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim | POLYFET | | ||
SCRs 1-70 AMPS NON-SENSITIVE GATE Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip | TECCOR | | ||
SCR FOR OVERVOLTAGE PROTECTION DESCRIPTION The TYP 212 ---> 1012 Family uses high perform ance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. FEATURES .HIGH SURGE CURRENT CAPABILITY .HIGH dI/dt RATING .HIGH STABILIT | STMICROELECTRONICS 意法半导体 | |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE | MITSUBISHI 三菱电机 | MITSUBISHI | | |
SEVEN DARLINGTON ARRAYS | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
SEVEN DARLINGTON ARRAYS | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS | ETC1 | ETC1 | | |
SEVEN DARLINGTON ARRAYS | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
SEVEN DARLINGTON ARRAYS | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY | TI 德州仪器 | TI | | |
Seven darlington array | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS | TI 德州仪器 | TI | | |
Seven darlington array | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY | TI 德州仪器 | TI | | |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS | TI 德州仪器 | TI | | |
HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY | TI 德州仪器 | TI | | |
HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY | TI 德州仪器 | TI | | |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS | ETC1 | ETC1 | |
NTE2012产品属性
- 类型
描述
- 型号
NTE2012
- 制造商
NTE Electronics
- 功能描述
INTEGRATED CIRCUIT 7 CHANNEL DARLINGTON ARRAY/DRIVER WITH PMOS INPUTS 16-LEAD DI
- 制造商
NTE Electronics
- 功能描述
DARLINGTON ARRAY NPN 7 50V DIP
- 制造商
NTE Electronics
- 功能描述
DARL ARRY/DRVR DIP16
- 制造商
NTE Electronics
- 功能描述
DARLINGTON ARRAY, NPN, 7, 50V, DIP; Transistor
- Polarity
NPN; Collector Emitter Voltage
- V(br)ceo
1.3V; Power Dissipation
- Pd
2W; DC Collector
- Current
600mA; Operating Temperature
- Min
-20C; Operating Temperature
- Max
85C ;RoHS
- Compliant
Yes
- 制造商
NTE Electronics
- 功能描述
Trans Darlington NPN 50V 0.6A 16-Pin PDIP
NTE2012规格书下载地址
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DdatasheetPDF页码索引
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